Manufacturing method of silicon carbide substrate bottom oxide layer thickening structure

Abstract

The invention provides a manufacturing method for forming a thickened structure of an oxide layer at the bottom of a silicon carbide substrate, which comprises the following steps of: patterning the silicon carbide substrate through an opening by using a patterned hard mask which is formed on the silicon carbide substrate and is provided with the opening so as to form a groove structure in the silicon carbide substrate; using the patterned hard mask as an ion implantation mask; injecting aluminum ions into the groove structure of the silicon carbide substrate, and injecting the aluminum ions into the bottom region of the groove structure by using the patterned hard mask and non-crystallizing the bottom region; and oxidizing the amorphized bottom region to form a bottom oxidized region.

Description

technical field [0001] The invention relates to a microelectronic assembly and a manufacturing method thereof, in particular to a manufacturing method of a thickened oxide layer structure at the bottom of a silicon carbide substrate. Background technique [0002] For those skilled in the art, single crystal silicon carbide (SiC) is particularly suitable for semiconductor devices, such as integrated circuit semiconductor devices and power semiconductor devices. Integrated circuit semiconductor devices typically include many active devices, such as transistors, in a single semiconductor substrate. The power semiconductor device may be an integrated circuit device, a semiconductor device capable of carrying large current and supporting high voltage. [0003] Silicon carbide and silicon are the most commonly used semiconductor materials. Compared with silicon, silicon carbide has a wide band gap, high melting point, low dielectric constant, high breakdown field strength, high t...

AI Technical Summary

Problems solved by technology

However, existing fabrication techniques for forming thick oxide layers at the bottom of SiC trench structures have some problems that need to be overcome

For example, the traditional silicon carbide substrate is Si(0001) / C(0001) crystal plane, so the bottom oxide layer formed by thermal oxidation will be slower than the sidewall of the trench, and the expected effect cannot be achieved.

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