Light emitting device and apparatus including the same
A light-emitting device and emission layer technology, which is applied to electrical components, circuits, organic semiconductor devices, etc., can solve problems such as pinholes or cracks in the emission layer, and adverse effects on device life
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[0281] According to another embodiment, a solar cell includes: a first electrode; a second electrode facing the first electrode; an active layer between the first electrode and the second electrode; a donor between the first electrode and the active layer layer; and an electron absorbing layer positioned between the first electrode and the donor layer and comprising an electron transport material, wherein the electron transport material is a transition metal, a rare earth metal, a metal oxide, an alkali metal complex, or any combination thereof.
[0282] As needed, the solar cell may further include an interception layer between the active layer and the second electrode.
[0283] General Definition of Substituents
[0284] As used herein the term "C 1 -C 60 "Alkyl" means a linear or branched chain aliphatic saturated hydrocarbon monovalent group having from 1 to 60 carbon atoms, and non-limiting examples of which include methyl, ethyl, propyl, isobutyl, sec-butyl, tert Buty...
preparation example 1
[0312] Preparation Example 1: Preparation of quantum dot composition
[0313] Quantum dots (particle diameter: 8 nm) having a structure of core / shell=InP (core) / ZnSe / ZnS (shell) were mixed at a concentration of 5 mg / ml in octane as a solvent to prepare a quantum dot composition.
Embodiment 1
[0315] As an anode, an ITO deposition substrate was cut into a size of 50 mm x 50 mm x 0.7 mm, ultrasonicated using isopropanol and pure water for 5 min each, and then cleaned by irradiating ultraviolet rays while simultaneously exposing to ozone for 30 min. Then, the ITO substrate was loaded onto the vacuum deposition equipment.
[0316] PEDOT:PSS was spin-coated on an ITO substrate and dried to form a hole injection layer with a thickness of 40 nm, and TFB (poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl )-diphenylamine)) was spin-coated on the hole injection layer and dried to form a hole transport layer with a thickness of 40 nm.
[0317] Liq was vacuum deposited on the hole transport layer to form an electron absorbing layer with a thickness of 4 nm.
[0318] The quantum dot composition of Preparation Example 1 was spin-coated on the electron absorbing layer at a coating speed of 3,500 rpm for 30 seconds, dried naturally (for example, air-dried) at room temperature (fo...
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