A vapor phase epitaxy system and its maintenance operation method

A technology of vapor phase epitaxy system and inlet flange, which is applied in the field of vapor phase epitaxy system and its maintenance operation, can solve the problems of inconvenient maintenance and low utilization rate of large-sized reaction chambers, and achieve improved equipment utilization rate and yield, low temperature The effect of less dead zone and increased number of furnaces

Active Publication Date: 2022-06-03
楚赟精工科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a vapor phase epitaxy system and its maintenance operation method, which is used to solve the problems of inconvenient maintenance and low utilization rate of the large-sized reaction chamber in the prior art.

Method used

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  • A vapor phase epitaxy system and its maintenance operation method
  • A vapor phase epitaxy system and its maintenance operation method
  • A vapor phase epitaxy system and its maintenance operation method

Examples

Experimental program
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Embodiment 1

[0050] FIG. 1 shows an exemplary cross-sectional structure diagram of the vapor phase epitaxy system 100 provided in this embodiment. the gas phase

[0051] The disk carrier support device 101 passes through the cover body 105, and the cover body 105 is connected to the disk carrier support device 101,

[0053] As an example, the materials constituting the inner chamber 103 include but are not limited to quartz, silicon carbide, aluminum oxide, nitride

[0054] As an example, the material constituting the outer chamber 104 includes, but is not limited to, metallic materials, such as stainless steel.

[0055] In an example, the outer chamber 104 is provided with a water cooling pipe, and the water cooling pipe can be arranged in the outer chamber

[0056] In an example, the vapor phase epitaxy system 100 further includes an exhaust device that includes an exhaust chamber

[0057] As an example, the outer chamber 104 is provided with an external heater 108, the external heater 108 i...

Embodiment 2

[0060] The vapor phase epitaxy system described in this embodiment has a larger structure than the vapor phase epitaxy system 100 described in the first embodiment.

[0061] Specifically, please continue to refer to FIG. 1 . As shown in FIG. 1, the outer chamber 104 is provided with an external heater 108, the

[0068] After the epitaxial growth, as shown in FIG. 2, the cover body 105 is opened, the cover body 105 together with the carrier plate 102 and the

[0069] Similarly, the replacement of the carrier disk 102 can be completed according to the above-mentioned operations, and the carrier disk to be cleaned can be processed in a vapor phase epitaxy system.

[0071] As shown in FIG. 3, in the vapor phase epitaxy process, the semiconductor thin film that should be deposited on the substrate will be attached to the top of the cavity

[0074] To sum up, the present invention provides a vapor phase epitaxy system and an operation and maintenance method thereof. Vapor phase epitaxy...

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Abstract

The invention provides a vapor phase epitaxy system, which includes a carrier plate support device, a cover body, a reaction chamber and a top cover assembly; the carrier plate support device passes through the cover body, and the cover body is connected with the carrier plate support device; the reaction chamber includes an inner chamber and The outer chamber, the inner chamber is set in the outer chamber; the top cover assembly is located at one end of the reaction chamber, including the inlet pipeline and the inlet flange, the inlet flange and the outer chamber are connected by a fastening device, and the inlet pipe The road communicates with the inner chamber to supply air to the inner chamber; the other end of the inner chamber away from the top cover assembly is provided with an opening, and the cover body is used for airtight opening and closing of the opening of the inner chamber. It is movably arranged in the inner chamber; the reaction chamber can move with the support device of the carrier plate through the cover body, so as to realize the closure between the top cover assembly and the reaction chamber. The vapor phase epitaxy system provided by the present invention can open the cavity from different positions under different working conditions by introducing the dual lifting structure of the reaction chamber and the carrier support device, which facilitates equipment maintenance and simplifies the maintenance process.

Description

A vapor phase epitaxy system and its maintenance operation method technical field The present invention relates to semiconductor technical field, be specifically related to epitaxial growth technical field, particularly relate to a kind of gas phase An epitaxy system and a method of maintaining the same. Background technique III-V group compound semiconductors have forbidden bandwidth, high electron saturation drift rate, high breakdown electric field strength, radiation resistance It has the advantages of high radiation intensity, small dielectric constant, good thermal stability and stable chemical properties, so it is widely used in light-emitting diodes (LED), laser diode (LD), and various electronic devices including high power, high frequency, high temperature transistors and integrated circuits in semiconductor devices. [0003] The vapor phase epitaxy process is a common means of growing III-V semiconductors. For example, in the hydride vapor phase epitaxy p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/08C30B25/12C30B25/10C30B28/14
CPCC30B25/08C30B25/12C30B25/10C30B28/14
Inventor 林桂荣
Owner 楚赟精工科技(上海)有限公司
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