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Low-dielectric polyimide with surface modified with ZIF-8 and preparation method thereof

A ZIF-8, polyimide technology, applied in the field of low dielectric polyimide and its preparation, can solve the problem of high dielectric constant, high dielectric constant of polyimide, low mechanical properties and stable dielectric environment It can reduce the dielectric constant, excellent mechanical flexibility, and simple preparation method.

Active Publication Date: 2021-11-12
大同共聚西安科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcomings of existing low dielectric constant materials such as poor mechanical properties and low dielectric environmental stability, and the relatively high dielectric constant of polyimide and other high-performance materials, and provide a surface modification The low-dielectric polyimide of ZIF-8 and its preparation method realize the batch preparation of low-dielectric constant polyimide, solve the problem of high dielectric constant of existing polyimide, and broaden the range of polyimide in high-speed The scope of application in the field of communication

Method used

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  • Low-dielectric polyimide with surface modified with ZIF-8 and preparation method thereof
  • Low-dielectric polyimide with surface modified with ZIF-8 and preparation method thereof

Examples

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Embodiment 1

[0015] (1) Preparation of polyimide and porogen zinc nitrate mixed solution: 10g of fluorinated polyimide was added to 90g of N,N-dimethylformamide to obtain a solution with a concentration of 10wt%, and then Add 0.1g of zinc nitrate, add 100r / min mechanical stirring for 1h until the dissolution is complete, and obtain a mixed solution of polyimide and zinc nitrate;

[0016] (2) Preparation of ZIF-8 / polyimide porous membrane: pour the mixed solution of polyimide and porogen zinc nitrate obtained in step (1) onto a glass plate, and scrape out a 200 μm porous membrane with a wet membrane preparer. Liquid film, then soak the glass plate and the liquid film on its surface together in 200mL 2.5wt% dimethylimidazole ethanol solution for 1h, and then continue to soak in dimethylimidazole / ethanol mixed solution for 2 days to obtain ZIF-8 / Polyimide porous membrane;

[0017] (3) Preparation of low-dielectric polyimide surface-modified ZIF-8: the ZIF-8 / polyimide porous membrane prepar...

Embodiment 2

[0020] (1) Preparation of polyimide and porogen zinc nitrate mixed solution: 10g of fluorinated polyimide was added to 90g of N,N-dimethylformamide to obtain a solution with a concentration of 10wt%, and then Add 1g of zinc nitrate, and add 100r / min mechanical stirring for 1h until the solution is completely dissolved to obtain a mixed solution of polyimide and zinc nitrate;

[0021] (2) Preparation of ZIF-8 / polyimide porous membrane: consistent with embodiment 1 step (2);

[0022] (3) Preparation of low-dielectric polyimide surface-modified ZIF-8: consistent with step (3) of Example 1;

[0023] The low dielectric polyimide density of the metasurface modified ZIF-8 is 0.23g / cm 3, The porosity is 75%, the low dielectric polyimide dielectric constant of the surface modified ZIF-8 is 1.48 at 1kHz, the dielectric loss is 0.0039 at 1kHz, and the water absorption rate after standing in water for 72h is 0.018% , the growth rate of the dielectric constant in an environment with 80% ...

Embodiment 3

[0025] (1) Preparation of polyimide and porogen zinc nitrate mixed solution: 10g of fluorinated polyimide was added to 90g of N,N-dimethylformamide to obtain a solution with a concentration of 10wt%, and then Add 1g of zinc nitrate, and add 100r / min mechanical stirring for 1h until the solution is completely dissolved to obtain a mixed solution of polyimide and zinc nitrate;

[0026] (2) the preparation of ZIF-8 / porous polyimide membrane: the preparation of ZIF-8 / porous polyimide membrane: the polyimide that step (1) obtains and porogen zinc nitrate mixed solution pouring into On the glass plate, use a wet film preparer to scrape out a 200 μm liquid film, then soak the glass plate and the liquid film on its surface in 200 mL of 5 wt% dimethylimidazole ethanol solution for 1 hour, and then continue to soak in dimethylimidazole / Soak in ethanol mixed solution for 2 days to obtain ZIF-8 / polyimide porous membrane;

[0027] (3) Preparation of low-dielectric polyimide surface-modif...

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Abstract

The invention relates to low-dielectric polyimide with the surface modified with ZIF-8 and a preparation method thereof. The surface of the low-dielectric polyimide with the surface modified with ZIF-8 is uniformly covered with ZIF-8, the section is composed of a large number of honeycomb micropores, the density is lower than 0.25 g / cm < 3 >, the porosity is larger than 70%, the dielectric constant is smaller than 1.50 when the frequency is 1 kHz, the dielectric loss is lower than 0.0040 when the frequency is 1 kHz, the elongation at break is larger than 80%, the tensile strength is larger than 10 MPa, and the water absorption rate is smaller than 0.02% after the low-dielectric polyimide stands in water for 72 h, and the dielectric constant growth rate is less than 0.1% after standing in an environment with 80% humidity for 7 days. The low-dielectric polyimide with the surface modified with the ZIF-8 is prepared from polyimide through a phase inversion method, and the ZIF-8 is generated on the surface of the polyimide film in situ through zinc nitrate in the polyimide solution in the film forming process and dimethylimidazole in the solution in the phase inversion process. The low-dielectric polyimide with the surface modified with ZIF-8 can be used as a low-dielectric-constant material to be applied to the field of interlayer dielectric materials for interconnection assembly.

Description

technical field [0001] The invention relates to a surface-modified ZIF-8 low-dielectric polyimide and a preparation method thereof, belonging to the field of organic dielectric material manufacturing. The low dielectric polyimide can be used as a low dielectric constant material in the field of interlayer dielectric materials for interconnect assembly. Background technique [0002] In recent years, with the rapid development of the high-speed communication field, the application size of electronic components tends to be miniaturized, the integration of chips in large-scale integrated circuits has been significantly improved, and the density of chip interconnections has increased, which has increased the resistance in the circuit and the capacitance in the wiring. , resulting in signal resistance-capacitance delay effect, affecting signal transmission speed and signal loss, which has become a new shackle for the development of integrated circuits in the direction of high spee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J9/26C08L79/08C08L87/00C08J5/18C08G83/00
CPCC08J9/26C08J5/18C08G83/008C08J2379/08C08J2487/00C08J2201/0444Y02P20/10
Inventor 周雨薇
Owner 大同共聚西安科技有限公司