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Manufacturing method of inclined field plate, HEMT device and manufacturing method of HEMT device

A manufacturing method and technology of inclined field plates, which are applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as uneven electric field distribution and affecting device reliability, and achieve adjustable inclination angle and length, and manufacturing process Simple and Actionable Effects

Pending Publication Date: 2021-11-16
苏州英嘉通半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there will be a weak electric field peak at the terminal of each field plate near the drain side. On the whole, the electric field distribution is still uneven, which will inevitably affect the final reliability of the device.

Method used

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  • Manufacturing method of inclined field plate, HEMT device and manufacturing method of HEMT device
  • Manufacturing method of inclined field plate, HEMT device and manufacturing method of HEMT device
  • Manufacturing method of inclined field plate, HEMT device and manufacturing method of HEMT device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] In this embodiment, the manufacturing method of the sloped field plate is used. The side surface of the trapezoidal structure is transferred to the second passivation layer through a photoresist mask, and then the sloped field plate is prepared. Each step will be described in detail below.

[0081] ginseng figure 2 As shown, firstly a photoresist mask 50 is formed on the first passivation layer 10 .

[0082] The first passivation layer 10 is a combination of one or more of a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer, etc., with a thickness of 10 nm to 300 nm; the photoresist mask 50 is a negative photoresist mask 1. A positive photoresist mask or a reverse photoresist mask, the thickness of the photoresist mask is 1 μm˜12 μm.

[0083] ginseng Figure 3a As shown, the trapezoidal structure 51 is formed on the photoresist mask through the exposure and development process, specifically:

[0084] If it is a negative photoresist mask, the nega...

Embodiment 2

[0105] ginseng Figure 7 As shown, the HEMT device in this embodiment includes:

[0106] Substrate 110, the substrate may include silicon (Si), sapphire (AL 2 o 3) and silicon carbide (SiC) and other materials;

[0107] The buffer layer 120, the buffer layer is mainly made of nitride, including gallium nitride, aluminum nitride, aluminum gallium nitride, etc.;

[0108] Heterojunction. The heterojunction includes a channel layer 130 and a barrier layer 140. In this embodiment, the channel layer is a gallium nitride channel layer, and the barrier layer is an aluminum gallium nitride barrier layer. There are gate region, source region and drain region;

[0109] The gate 151, the source 152 and the drain 153 are respectively formed in the gate region, the source region and the drain region;

[0110] a first passivation layer 10 on the heterojunction;

[0111] A second passivation layer 20 located on the first passivation layer, the second passivation layer has a trapezoidal ...

Embodiment 3

[0125] ginseng Figure 8 As shown, the metal field plate 60 in the HEMT device of this embodiment is a source field plate, and the source field plate is electrically connected to the source.

[0126] Of course, in other embodiments, while forming the gate field plate and / or the source field plate, the drain field plate can also be formed synchronously. The formation process of the drain field plate is an existing technology, and will not be repeated here. .

[0127] As can be seen from the above technical solutions, the present invention has the following advantages:

[0128] The invention forms a trapezoidal structure through a photoresist mask, and transfers the inclined surface of the trapezoidal structure to the passivation layer, and then prepares the inclined field plate on the passivation layer;

[0129] The manufacturing process of the inclined field plate is simple and feasible, and the inclination angle and length can be adjusted.

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Abstract

The invention discloses a manufacturing method of an inclined field plate, an HEMT device and a manufacturing method of the HEMT device. The manufacturing method comprises the following steps of forming a photoresist mask on a first passivation layer, forming a trapezoidal structure on the photoresist mask through an exposure and development process, filling a second passivation layer in the trapezoidal structure of the photoresist mask, removing the photoresist mask, forming a third passivation layer on the first passivation layer and the second passivation layer, wherein the third passivation layer comprises an inclined surface, and forming a metal field plate on the third passivation layer, wherein the metal field plate is at least formed on all or part of the inclined surface of the third passivation layer. The trapezoidal structure is formed through the photoresist mask, and the inclined surface of the trapezoidal structure is transferred to the passivation layer, so that the inclined field plate is prepared on the passivation layer; the manufacturing process of the inclined field plate is simple and feasible, and the inclination angle and the length are adjustable.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a manufacturing method of an inclined field plate, a HEMT device and a manufacturing method thereof. Background technique [0002] The third-generation semiconductor material gallium nitride (GaN) has become a research hotspot in the fields of high temperature, high frequency and high power density due to its wide bandgap (3.4eV), high electron mobility and high breakdown electric field. Currently GaN-based high electron mobility transistors (High Electron Mobility Transistor, HMET) have broad application prospects in the field of high-efficiency, high-voltage power electronics. When GaN HEMTs work at high frequency and high voltage, they need to withstand extremely high drain voltage, and the electric field lines will gather between the drain and gate of the device. However, due to the inevitable defects in the device structure, the electric field in the chann...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/40H01L29/778H01L21/335
CPCH01L29/402H01L29/778H01L29/66462
Inventor 宁殿华蒋胜柳永胜程新刘栋尧
Owner 苏州英嘉通半导体有限公司
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