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Synaptic transistor device based on novel polyimide gate insulating layer and preparation method thereof

A technology of gate insulating layer and polyimide, which is applied in the field of synaptic transistor electronic devices, can solve the problems of large power consumption and small working voltage range, and achieve the effects of low power consumption, large working voltage range and large specific capacitance

Pending Publication Date: 2021-11-16
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of high power consumption and small operating voltage range of organic polymer synaptic transistor devices, and provide a synaptic transistor device based on a new polyimide gate insulating layer and its preparation method

Method used

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  • Synaptic transistor device based on novel polyimide gate insulating layer and preparation method thereof
  • Synaptic transistor device based on novel polyimide gate insulating layer and preparation method thereof
  • Synaptic transistor device based on novel polyimide gate insulating layer and preparation method thereof

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Embodiment 1

[0039] A method for preparing a synaptic transistor device based on a novel polyimide gate insulating layer is as follows:

[0040] (1) Clean the conductive glass substrate with a size of 2 × 2 cm and a thickness of 2 mm by ultrasonic cleaning with deionized water, acetone and isopropanol in sequence, then blow dry the surface of the substrate with nitrogen gas, and put it into a UV cleaning machine for 15 minute;

[0041] (2) PMDA-ODA amic acid solution (the solvent of this solution is made of N-methylpyrrolidone (NMP) and xylene (xylene) according to volume ratio 4 ratio with the PMDA-ODA amic acid solution of ionic liquid [EMIM] [TFSI] and 12% mass fraction 1.) According to the mass ratio of 1 to 20, mix and stir evenly to obtain a light yellow and clear mixed solution of PMDA-ODA polyimide and ionic liquid [EMIM][TFSI].

[0042] (3) in the glove box, drip the mixed solution of PMDA-ODA type polyimide and ionic liquid [EMIM][TFSI] in the substrate of 4 square centimeters ste...

Embodiment 2

[0050] A method for preparing a synaptic transistor device based on a novel polyimide gate insulating layer is as follows:

[0051] (1) Clean the conductive glass substrate with a size of 2 × 2 cm and a thickness of 2 mm by ultrasonic cleaning with deionized water, acetone and isopropanol in sequence, then blow dry the surface of the substrate with nitrogen gas, and put it into a UV cleaning machine for 15 minute;

[0052] (2) PMDA-ODA amic acid solution (the solvent of this solution is made of N-methylpyrrolidone (NMP) and xylene (xylene) according to volume ratio 4 ratio with the PMDA-ODA amic acid solution of ionic liquid [EMIM] [TFSI] and 12% mass fraction 1.) According to the mass ratio of 1 to 10, mix and stir evenly to obtain a light yellow and clear mixed solution of PMDA-ODA polyimide and ionic liquid [EMIM][TFSI].

[0053] (3) in the glove box, drip the mixed solution of PMDA-ODA type polyimide and ionic liquid [EMIM][TFSI] in the substrate of 4 square centimeters s...

Embodiment 3

[0058] Other steps are with embodiment 1, and difference is that the polyamic acid solution in the step (2) is replaced by PMDA-ODA amic acid solution by PMDA-ODA amic acid solution, wherein, the solvent in the BPDA-ODA amic acid solution is N - Methylpyrrolidone (NMP).

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Abstract

The invention relates to a synaptic transistor device based on a novel polyimide gate insulating layer and a preparation method thereof. According to the structure of the artificial synaptic device, a part of a gate insulating layer is distributed on a substrate, and a semiconductor layer and a metal layer are sequentially arranged on the gate insulating layer, the gate insulating layer is made of polyimide materials doped with ionic liquid, and the semiconductor layer is made of poly (3-hexylthiophene) (P3HT). The synaptic transistor device has the advantages of high sensitivity, low power consumption, large working voltage range and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to synaptic transistor electronic devices. Background technique [0002] Due to the separation of storage and computing modules, the computing system based on the von Neumann structure cannot achieve fast, accurate and intelligent processing of massive information, especially in pattern recognition and deep learning. Many shortcomings have been exposed. At the same time, the high intelligence and powerful computing and processing capabilities of the human brain have drawn more and more attention to brain-inspired intelligent computing. [0003] The human brain is a complex and huge neural network system that can process a large amount of nonlinear data in parallel while consuming very low energy. The human brain is composed of nearly 100 billion neurons, and there are thousands of synapses between each neuron. In the neural computing system based on the neural network, its mos...

Claims

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Application Information

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IPC IPC(8): H01L51/30H01L51/40
CPCH10K10/00H10K10/468H10K10/471
Inventor 徐文涛龚江东卫欢欢
Owner NANKAI UNIV
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