35results about How to "Small dielectric constant" patented technology

PCT No. PCT/JP96/00179 Sec. 371 Date Jul. 23, 1997 Sec. 102(e) Date Jul. 23, 1997 PCT Filed Jan. 31, 1996 PCT Pub. No. WO96/24177 PCT Pub. Date Aug. 8, 1996An insulator for high frequency connectors which comprises a thermoplastic norbornene resin and has a voltage and standing wave ratio of 1.89 or less even in the high frequency band of 2-3 GHz, and a high frequency connector using the insulator.

BiFeO₃ precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent elements of Bi, Fe and O and has crystal lattice of a tetragonal or orthorhombic system.

The invention provides an antenna housing substrate and a preparation method thereof. The antenna housing substrate is prepared by mixing substrate resin with any one of hollow microspheres, aerogel, a foaming agent and mixture of the hollow microspheres and the aerogel and applying an extrusion forming or injection molding technology. The antenna housing substrate prepared by the method is provided with no glass fiber reinforcing layer, so that the dielectric loss is low, the dielectric constant is low; meanwhile, substrates of different performances can be prepared through design of the formula; the industrial production requirements are met; and the antenna housing substrate has good development and application prospect.

Provided is a semiconductor device of the present invention including, a substrate; a Hf-containing insulating film (HfSiON film) provided over the semiconductor substrate; a NiSi fully-silicided electrode for blocking diffusion of at least Hf which composes the insulating film and a metal element which composes the fully-silicided gate electrode, provided over the HfSiON film; and a barrier film (SiOC film) provided between HfSiON film and the NiSi fully-silicided electrode so as to be brought into contact with the NiSi fully-silicided electrode, wherein the NiSi fully-silicided electrode contains either an N-type or a P-type impurity segregated in a portion thereof brought into contact with the SiOC film, and the SiOC film has a dielectric constant not larger than that of a silicon oxynitride film, and contains (i) silicon (Si), (ii) carbon (C), and (iii) oxygen (O) or nitrogen (N), as major constituents.

The invention relates to a thermosetting resin composition and a prepreg and a laminate for printed circuits thereby. The thermosetting resin composition comprises at least an epoxy resin of the structural formula (I) and a cyanate resin. The thermosetting resin composition of the invention has high heat resistance, low dielectric constant and low dielectric dissipation factors, thus being used for manufacturing the resin sheets, resin composition copper foils, the prepregs, the laminate and the printed circuit boards. R is (a), and n and m are natural numbers.

The invention provides a metamaterial substrate and a preparation method thereof. A metamaterial substrate with hollow microspheres is prepared by using a microsphere foaming agent, and the density and dielectric constant of the substrate are reduced by introducing air; a material with thermoplastic polymer as a main body is used as the substrate, which has a light mass, a small dielectric constant, low loss, and wide application fields when compared with hard ceramic materials; By controlling the ratio of the microsphere foaming agent and selecting microsphere foaming agents with different expansion ratios, metamaterial substrates with different dielectric constants can be prepared, and the application is expanded.

The invention provides a curable resin composition with high dielectric property (low dielectric constant. low dielectric loss tangent) and having condensates with high glass-transition temperature and flame resistance, bis (methyl) acryloyl tail end benzyl ether compound and aromatic bis-halogenated methyl compound as an intermediate. Aromatic bis-halogenated methyl compounds are reacted with bisphenol fluorene compounds, and the obtained aromatic bis-halogenated methyl compounds with halogenated methyl groups at two tail ends are employed as intermediates. Next, the intermediates are reacted with compounds of (methyl) acrylic acid series such as (methyl) acrylic acid, (methyl) potassium acrylate and the like, thus the halogenated methyl groups at two tail ends are changed into (methyl) acryloyl groups and bis (methyl) acryloyl tail end benzyl ether compounds are obtained. In addition, the invention relates to a curable resin composition comprising bis (methyl) acryloyl tail end benzyl ether compounds and polymerization initiators (B).

The invention relates to an epoxy resin and a preparation method thereof. The epoxy resin has the following structural formula (I). The preparation method can adopt a one-step method, namely directlycondensing the mixture of hydroxystyrene/styrene copolymer and epihalohydrin in the presence of alkali to obtain the epoxy resin, and also can adopt a two-step method, namely firstly etherifying the hydroxystyrene/styrene copolymer and epihalohydrin in the presence of catalysts and then closing loop in the presence of alkali liquor. The epoxy resin of the invention has high heat resistance, low dielectric constant and low dielectric dissipation factors, thus being used for manufacturing the resin sheets, resin composition copper foils, the prepregs, the laminate and the printed circuit boards.R is shown in (II), and n and m are natural numbers.

There is provided a semiconductor device including a semiconductor chip which includes a semiconductor substrate and a multilayer interconnection structure formed thereon, the multilayer interconnection structure including an interlayer insulating film smaller in relative dielectric constant than an SiO₂ film, an encapsulating resin layer which covers a major surface of the semiconductor chip on a side of the multilayer interconnection structure and covers a side surface of the semiconductor chip, and a stress relaxing resin layer which is interposed between the semiconductor chip and the encapsulating resin layer, covers at least a part of an edge of the semiconductor chip on the side of the multilayer interconnection structure, and is smaller in Young's modulus than the encapsulating resin layer.

A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×10¹¹ electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film. Preferably, the process pressure is 19.95 Pa or below. Under such process conditions for depositing a fluorine-containing carbon film by using the plasma, the source gas, such as C₅F₈ gas, is decomposed properly to form a structure of long CF chains. A interlayer insulation film thus formed has a small relative dielectric constant and permits only a low leakage current.

The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

A communications terminal is provided which includes an antenna element, which has a specific antenna volume, and an acoustic output device, wherein the antenna element and the acoustic output device are designed and/or arranged with respect to each other such that at least part of the antenna volume forms at least part of a resonant cavity for the acoustic output device.

The invention provides a resin-base nonlinear composite material for a low temperature environment and a preparation method of the resin-base nonlinear composite material. The resin-base nonlinear composite material is prepared from the following components in parts by weight: 50-60 parts of epoxy resin, 15-25 parts of a curing agent, 20-40 parts of a flexibilizer, 2-5 parts of a silane coupling agent and 5-10 parts of functional fillers. The preparation method has the advantages that the operation process is simple, and the preparation cost is relatively low. According to the technical scheme, polymer epoxy resin and functional inorganic fillers (such as silicon carbide and zinc oxide) are composited so as to obtain the nonlinear composite material capable of automatically uniformizing the distribution of non-uniform electric fields, so that the generation of space charges is effectively inhibited, and the electrical performance of an insulation structure is improved.

A liquid crystal display device includes an array substrate having a pixel electrode formed of a conductor, a counter substrate having a counter electrode facing the pixel electrode, and a liquid crystal layer held between the substrates and containing liquid crystal molecules set in a vertical alignment with respect to the substrates. The pixel electrode had a void space located in the conductor to provide minute domains between which different directors of the liquid crystal molecules are obtained when a potential difference is applied between the array and counter electrodes, and a bridge-wiring member interconnecting adjacent parts of the conductor in the void space, and the bride-wiring member is configured to make an electric field created in a part of the pixel area located on the bridge-wiring member weaker than that created in the minutes domains according to the potential difference.

In a differential signal transmission cable, a surface of a skin layer is partially provided with shield conductors disposed at respective equidistant portions spaced apart in a direction orthogonal to a direction in which two signal conductors are arranged, the equidistant portions each being distant by the same distance from axial centers of the signal conductors. On the surface of the skin layer, the shield conductors are not provided in areas located in the direction in which the signal conductors are arranged, and spaces are created in these areas.

The invention discloses an LCP acoustic film, which is prepared from the following raw materials by weight: 15-20 parts of a vinyl fluorine-containing cyclohexyl methyl ether liquid crystal compound/methyl methacrylate/4-acryloyloxybenzophenone/single-terminal vinyl silicone oil copolymer, 50-60 parts of a liquid crystal polymer, 30-40 parts of poly1,4-dihydroxy-2-butene 2,7-naphthalenedicarboxylate, 8-12 parts of vinyl-POSS, 0.2-0.4 part of a heat stabilizer, 0.1-0.4 part of a lubricant, 0.1-0.3 part of an antioxidant and 0.02-0.05 part of an initiator. The invention further provides a preparation method of the LCP acoustic film. According to the invention, the LCP acoustic film retains the advantages of heat resistance, molding processability, dimensional stability, optical performance,electrical performance, chemical resistance, excellent flame retardancy, low dielectric constant and dielectric loss of LCP, and further has good weather resistance, good heat resistance, good mechanical property, good sensitivity and good consistency.

A data storage and a semiconductor memory device including the same are provided, the data storage including a lower electrode, a first discharge prevention layer stacked on the lower electrode, a phase-transition layer on the first discharge prevention layer, a second discharge prevention layer stacked on the phase-transition layer, and an upper electrode stacked on the second discharge prevention layer. The phase transition layer includes oxygen and exhibits two different resistance characteristics depending on whether an insulating property thereof changed. The first and second discharge prevention layers block discharge of the oxygen from the phase transition layer.

The invention relates to the technical field of cables, and discloses a crosslinked polyethylene cable insulating material and a preparation method thereof. The crosslinked polyethylene cable insulating material is prepared from the following components in parts by weight: 80-90 parts of low-density polyethylene, 2-3 parts of dicumyl peroxide, 0.5-1.5 parts of modified nanometer aluminum oxide, and 1-2 parts of high-voltage stabilizer composite particles. The prepared crosslinked polyethylene cable insulating material has the excellent conductivity temperature characteristic, 'inversion' of anelectric field does not occur in a cable insulating layer, in addition, a voltage stabilizer is not degraded and does not reach with an auxiliary in the cable material extruding and crosslinking processes, thus the action effect of the voltage stabilizer is improved, the local discharge and electric tree capacity of the polyethylene insulating material is improved, and thus the direct-current breakdown strength of the material is improved.

The invention relates to the technical field of composite materials, and in particular relates to a material for preparing a radome and a preparation method thereof. The material for preparing the radome comprises polycarbonate, hollow glass beads and a methacrylic acid-butadiene-styrene terpolymer. The specific gravity of the composite material can be reduced by the hollow glass beads, and the dielectric constant and dielectric loss of the composite material are relatively small, so that the radome prepared from the material does not easily cause adverse effects on an antenna; moreover, when the material for preparing the radome is prepared, the hollow glass beads are fed from a side feeding cylinder, so that the breakage rate of the hollow glass beads can be reduced, and adverse effects on the specific gravity, dielectric constant and dielectric loss of the composite material due to breakage of the glass beads during extrusion granulation of a granulator are further avoided.

In the technical field of display, a substrate, a display device and a method for manufacturing an alignment film are disclosed. The present disclosure can solve the technical problem of image sticking of the liquid crystal display caused by the difference of feedthrough at different locations of the liquid crystal display device. The substrate of the present disclosure comprises a glass base and an alignment film formed on the glass base. The thickness of the alignment film measured along a lateral direction gradually becomes thinner from both ends of the alignment film to the center thereof, and/or the thickness of the alignment film measured along a longitudinal direction gradually becomes thinner from one end of the alignment film to the other end thereof. The present disclosure can be applied to display devices, such as liquid crystal television, liquid crystal display, mobile phone, and PC tablet, etc.

The invention discloses a 5G communication-based membrane material which is characterized by being prepared from the following raw materials in parts by weight: 60-70 parts of adamantyl quaternary ammonium salt silane co-modified hyperbranched polyphenylene sulfide, 10-20 parts of hyperbranched sulfonated polyetheretherketone, 4-7 parts of micron-sized hollow mesoporous SiO2 microspheres, 2-4 parts of a coupling agent, 0.5-1.5 parts of a foaming agent, 2-4 parts of phosphorus pentoxide, and 1-3 parts of 2, 3, 5, 6-tetrafluoroterephthalic acid. The invention also provides a preparation method of the 5G communication-based membrane material. The 5G communication-based membrane material is higher in comprehensive performance, smaller in dielectric constant and dielectric loss, stronger in weather resistance and durability and excellent in mechanical property, and has higher economic value, social value and popularization and application value.

The invention relates to the field of zirconia ceramic, and discloses zirconia ceramic as well as a preparation method and application thereof. The zirconium oxide ceramic comprises the following elements: Y, Zr, Mg, Al, Si and Nb, and the phase of the zirconium oxide ceramic comprises monoclinic phase zirconium oxide, tetragonal phase zirconium oxide, zirconium silicate and cordierite. The zirconium oxide ceramic comprises the following components in percentage by element: 50.6 to 61.1 percent by weight of Zr, 5.1 to 12.6 percent by weight of Al, Mg and Si, 3.2 to 3.9 percent by weight of Y, and 0.3 to 2.7 percent by weight of Nb. The phase of the zirconia ceramic comprises 60 to 80 percent by weight of monoclinic phase zirconium oxide, 3 to 30 percent by weight of tetragonal phase zirconium oxide, 8 to 22 percent by weight of cordierite and 0.5 to 3 percent by weight of zirconium silicate. The zirconia ceramic can simultaneously have the characteristics that the dielectric constant is less than 30, the density is less than 5.40 g/cm < 3 >, and the toughness is greater than 6.5 MPam 0.5, and can be used for a mobile phone backboard with low dielectric constant, low density and good toughness.

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a gate structure and a dielectric layer on a substrate; and forming a sidewall spacer on a sidewall surface of the gate structure. The method also includes forming a source and drain doped region in the substrate on both sides of the gate structure. The dielectric layer covers a surface of the sidewall spacer. In addition, the method includes forming a source-drain plug in the dielectric layer. The source-drain plug is connected to the source and drain doped region. Moreover, the method includes forming an isolation opening in the dielectric layer by at least partially removing the sidewall spacer. Further, the method includes forming an isolation structure in the isolation opening, wherein the isolation structure has a dielectric constant less than the sidewall spacer.

The invention relates to the technical field of electrical bushings, in particular to a low-temperature brittleness resistant electrical bushing which comprises an inner layer, a middle layer radially located outside the inner layer and an outer layer radially located outside the middle layer. The inner layer is specifically a polytrifluorochloroethylene structural layer, the middle layer is specifically a polyvinyl chloride structural layer, and the outer layer is specifically a linear low density polyethylene structural layer. The low-temperature brittleness resistant electrical bushing is reasonable in design, not only has the flame retardance and insulativity of a PVC-U electrical bushing, but also has good low-temperature toughness, impact resistance and pressure resistance, is not prone to brittle rupture in a low-temperature environment, the occurrence of the brittleness phenomenon of the PVC-U flame-retardant electrical bushing in a low-temperature environment is greatly reduced.