Preparation method of high-purity silicon dioxide for optical film coating
A silicon dioxide and optical coating technology, which is applied in the direction of silicon dioxide, silicon oxide, chemical instruments and methods, etc., can solve the problems of insufficient purity and high impurity content, and achieve excellent reinforcement performance, high purity, and fine particle effects
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Embodiment 1
[0032] refer to figure 1 : A preparation method of high-purity silicon dioxide for optical coating, it is characterized in that, comprises the following steps:
[0033] S1: First, spread the purified silicon tetrachloride, silicon tetrafluoride and methyl silicon chloride layer by layer in the gas phase preparation reaction kettle, the mass of silicon tetrachloride, silicon tetrafluoride and methyl silicon chloride The ratio of the number of parts is listed as 60-65:15-20:15-25, through the introduction of high-purity oxygen, the rate of oxygen introduction is 0.5-1.0L / min, and the amount of oxygen in the reactor after oxygen introduction 4.0-4.2 times the amount of raw materials, use 300-400W laser to irradiate the flat cloth surface, and generate preliminary SiO on the bottom side 2 Substrate;
[0034] Wherein the specific reaction equation after the raw material in S1 is fed with oxygen is as follows:
[0035] SiCI 4 +O 2 → SiO 2 +2CI 2 ↑
[0036] And raw material a...
Embodiment 2
[0056] refer to figure 2 : a preparation method of high-purity silicon dioxide for optical coating, comprising the following steps:
[0057] S1: First put the purified silicon tetrachloride and methyl silicon chloride into the reaction kettle for gas phase preparation, the mass fraction of silicon tetrachloride is 85-88 parts, and the methyl silicon chloride is 35-40 parts. Low-temperature nitrogen removes excess gas inside, and a silicon dioxide sheet is installed in the reactor;
[0058] S2: Then in the S1 reactor, it is fed with hydrogen and oxygen gas flow, and the gas flow is heated to form a stable high-temperature gas flow input. The rate of hydrogen and oxygen gas flow is 0.35-0.58L / min, and the temperature of hydrogen and oxygen gas flow is at, 70-82°C, use 380-420W laser to irradiate the flat cloth surface, under the action of high temperature, all the remaining raw materials will form smoky SiO 2 The particles lasted for 10-15min, and the temperature was lowered ...
Embodiment 3
[0067] refer to figure 2 : a preparation method of high-purity silicon dioxide for optical coating, comprising the following steps:
[0068] A method for preparing high-purity silicon dioxide for optical coating, comprising the following steps:
[0069] S1: First put the purified silicon tetrachloride and silicon tetrafluoride into the reaction kettle for gas phase preparation, the mass fraction of silicon tetrachloride is 72-78 parts, silicon tetrafluoride is 38-42 parts, and the To remove excess gas inside, there is a bottom plate in the reactor;
[0070] S2: Then, in the S1 reactor, a flow of hydrogen and oxygen gas is passed into it, and the ratio of hydrogen and oxygen is 1:3. The gas flow is heated to form a stable high-temperature gas flow input, and the flow rate of hydrogen and oxygen gas is 0.58-0.62L / min. And the temperature of the hydrogen-oxygen flow is 80-85°C, and a 320-400W laser is used to irradiate the flat cloth surface. Under the action of high temperatu...
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