Chemically amplified positive ultraviolet photoresist, and preparation method and using method thereof

A technology of ultraviolet light and photoresist, applied in the field of photoresist, can solve the problems of chemically amplified positive ultraviolet photoresist cracking, etc., and achieve the effect of improving brittle crack defects and expanding the scope of application

Pending Publication Date: 2021-11-19
江苏汉拓光学材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a chemically amplified positive UV photoresist that can effectively solve the cracking problem of the chemically amplified positive UV photoresist and its preparation and use method in order to overcome the defects of the above-mentioned prior art

Method used

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  • Chemically amplified positive ultraviolet photoresist, and preparation method and using method thereof
  • Chemically amplified positive ultraviolet photoresist, and preparation method and using method thereof
  • Chemically amplified positive ultraviolet photoresist, and preparation method and using method thereof

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preparation example Construction

[0079] The second aspect of the present invention provides a method for preparing the chemically amplified positive UV photoresist, comprising the following steps: quenching the poly(p-hydroxystyrene) polymer resin, the photoacid generator, and the acid After the agent, the crosslinking agent, the leveling agent and the solvent are mixed in proportion, the chemically amplified positive UV photoresist is obtained.

[0080] Preferably, after all the raw materials are mixed, the preparation method includes filtration, for example, a microporous membrane filter can be used for filtration.

[0081] More preferably, the filter pore size is 1-5 μm, such as 1-3 μm or 3-5 μm.

[0082] The third aspect of the present invention provides a method for using the above-mentioned chemically amplified positive UV photoresist, comprising the following steps: coating the chemically amplified positive UV photoresist on a silicon wafer, followed by pre-baking, exposure, and After baking and devel...

Embodiment 1

[0100] A chemically amplified positive UV photoresist comprising the following components in parts by weight (100 parts in total):

[0101]

[0102] The preparation process of the photoresist is as follows: add each component according to the formula, stir to achieve complete dissolution, and complete the preparation of the photoresist after filtering through a polypropylene (PP) microporous filter membrane with a pore size of 1 μm.

[0103] The prepared photoresist is used according to the following method:

[0104] Spin-coat on a 4-inch silicon wafer, then pre-bake at 130°C for 5 minutes, and then expose in an LED 365nm contact exposure machine with an exposure energy of 350mJ / cm 2 , and then post-baked at a temperature of 110° C. for 2 minutes, and then developed, wherein the developing time was 3 minutes, and the developing solution was an aqueous solution of tetramethylammonium hydroxide with a concentration of 2.38%.

[0105] Obtain a photolithographic pattern such a...

Embodiment 2

[0112] A chemically amplified positive UV photoresist comprising the following components in parts by weight (100 parts in total):

[0113]

[0114] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the method of using the above-mentioned photoresist is the same as that of Example 1.

[0115] The obtained lithographic pattern is as image 3 As shown, the film thickness is 20.1 μm, and the cracking of the coating film is observed through the optical microscope OM. The specific results are shown in Table 1.

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Abstract

The invention relates to a chemically amplified positive ultraviolet photoresist, and a preparation method and a using method thereof. The photoresist comprises, by mass, 25-45% of poly-p-hydroxystyrene polymer resin; 0.5-1.5% of a photoinduced acid generator; 0.1-0.2% of an acid quencher; 2-4% of a cross-linking agent; 0.1-0.5% of a flatting agent; and 48.8-72.3% of a solvent. The preparation method comprises the following step: mixing the components of the chemical amplification type positive ultraviolet photoresist. The using method comprises the following steps: coating a silicon wafer with the chemical amplification type positive ultraviolet photoresist, and sequentially carrying out pre-baking, exposure, post-baking and development. The chemically amplified positive ultraviolet photoresist solves the problem of photoresist cracking, especially the problem of cracking of positive thick film (10-30 microns) photoresist, is suitable for a passivation layer or a high-energy injection process at the rear section of an integrated circuit, and expands the application range.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to a chemically amplified positive ultraviolet photoresist and a preparation and use method thereof. Background technique [0002] The passivation protection layer or high-energy implantation process of the back-end of integrated circuits often uses I-line thick film photoresist with a thickness close to or greater than 20 μm. However, the common problem encountered in the process of research and use is the problem of film cracking, which seriously affects the popularization and application. Many efforts have been made to solve this problem. [0003] For example: US Pat. No. 6,716,568 uses a polyol reactive diluent to improve coating film cracking. In U.S. Patent No. 5,102,772, small molecule reactive diluents are used to improve coating film cracking, such as XD7342 and CY179. [0004] Chinese Patent CN108132584B "A Photoresist Composition Containing Poly(p-hydroxystyrene) P...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/004G03F7/32G03F7/38G03F7/40G03F7/20
CPCG03F7/0392G03F7/004G03F7/32G03F7/38G03F7/40G03F7/70008
Inventor 傅志伟潘新刚刘平吴信刘军林梅崇余冉瑞成
Owner 江苏汉拓光学材料有限公司
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