Semiconductor structure preparation method and semiconductor structure

Abstract

The invention provides a semiconductor structure preparation method and the semiconductor structure, which are applied to the field of integrated circuit manufacturing. The preparation method can prevent the side wall of a mask layer from forming an arch bend in a pattern transfer process, thereby preventing a connection bridge from being formed between subsequently formed electric contact structures, and improving the performance of the semiconductor structure. In addition, according to the preparation method, the position of the contact hole is indirectly defined by using the first isolation strip and the second isolation strip, so that the situation that the position of the contact hole is defined by using a boss is avoided, alignment deviation is avoided, and the alignment precision is greatly improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for preparing a semiconductor structure and the semiconductor structure. Background technique [0002] In the manufacturing technology of semiconductor structures, the photoresist and mask layer are usually used to form the required pattern in combination with photolithography and etching processes. However, due to the influence of the material properties of the mask layer, the required pattern formed deviates Yield of semiconductor structures. [0003] Taking the manufacture of Dynamic Random Access Memory (DRAM for short) as an example, in the formation process of the bit line contact structure (Bit Line Contact, BLC for short) of DRAM, pattern transfer (transfer) is carried out in dry etching. ) process, because the mask layer is prone to lateral etching, causing the sidewall of the mask layer to form a bowing bend, which affects the transfer of the pa...

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Problems solved by technology

[0002] In the manufacturing technology of semiconductor structures, the photoresist and mask layer are usually used to form the required pattern in combination with photolithography and etching processes. However, due to the influence of the material properties of the mask layer, the required pattern formed deviates Yield of semiconductor structures

[0003] Taking the manufacture of Dynamic Random Access Memory (DRAM for short) as an example, in the formation process of the bit line contact structure (Bit Line Contact, BLC for short) of DRAM, pattern transfer (transfer) is carried out in dry etching. ) process, because the mask layer is prone to lateral etching, causing the sidewall of the mask layer to form a bowing bend, which affects the transfer of the pattern, which in turn leads to the subsequent formation of bit line contact structures or bit line contact structures A bridge is formed between the active regions, affecting the performance of DRAM

[0004] In addition, with the increase of DRAM integration, the existing technology is more likely to cause the offset of the bit line contact structure, and also cause the formation of connection bridges between the bit line contact structures or between the bit line contact structure and the active region. Affects the performance of DRAM

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