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Semiconductor structure and forming method thereof

A semiconductor and graphics technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of photoresist not being uniformly exposed, and achieve the effect of improving reliability

Pending Publication Date: 2021-12-03
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The function of forming an anti-reflection coating is to prevent the exposure light from reflecting at the substrate interface after passing through the photoresist layer, because the reflected light returning to the photoresist will interfere with the incident exposure light, resulting in uneven exposure of the photoresist

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Experimental program
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Embodiment Construction

[0013] At present, the reliability of graphics transmission still needs to be improved. Combining with a method of forming a semiconductor structure, the reason why its performance needs to be improved is analyzed.

[0014] Figure 1 to Figure 5 It is a structural schematic diagram corresponding to each step in a method for forming a semiconductor structure.

[0015] refer to figure 1 , providing a substrate (not shown), on which the interlayer dielectric layer 10 is formed. The interlayer dielectric layer 10 is used to form interconnection holes.

[0016] continue to refer figure 1 , forming a metal hard mask layer 20 on the interlayer dielectric layer 10 ; forming a buffer oxide layer 30 on the metal hard mask layer 20 ; and forming a pattern transfer material layer 40 on the buffer oxide layer 30 .

[0017] As an example, the material of the graphic transfer material layer 40 is amorphous silicon (a-Si).

[0018] continue to refer figure 1 , forming a mask stack 90...

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PUM

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate, and forming a pattern transfer material layer on the substrate; forming a protective layer covering the pattern transfer material layer and a mask lamination layer covering the protective layer, wherein the mask lamination layer comprises an anti-reflection coating and a photoresist layer which are sequentially stacked from bottom to top; patterning the photoresist layer to form a pattern opening; judging whether the pattern opening meets a pattern detection reference or not; if not, executing reworking operation, wherein the reworking operation comprises the steps that the mask lamination layer and the protection layer are sequentially removed; and if so, etching the anti-reflection coating and the protection layer along the pattern opening to expose the pattern transfer material layer. When reworking operation is carried out (namely, when the mask lamination layer needs to be removed), the protection layer can play a role in protecting the pattern transfer material layer, and the probability that the pattern transfer material layer is damaged is low, so that the reliability of subsequent pattern transfer is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology. Photolithography technology can transfer the required pattern from the mask to the silicon wafer to form a semiconductor product that meets the design requirements. Specifically, photolithography technology realizes pattern transfer by exposing the pattern to the photoresist layer (the material is light-sensitive resist) arranged on the silicon wafer. [0003] With the continuous development of integrated circuits, in order to meet the requirements of lithography, in addition to the continuous upgrading of lithography equipment, people also use other technologies to improve the quality and precision of lithography, using antireflective coating (antireflective c...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/528
CPCH01L21/76816H01L23/528H01L2221/101
Inventor 雷镇全张婧
Owner SEMICON MFG INT (SHANGHAI) CORP
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