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Semiconductor doping composition, preparation method thereof and solar cell

A technology of solar cells and compositions, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as damage to PN junction, pollution, high cost, etc., and achieve the effect of selective emitter processing

Pending Publication Date: 2021-12-03
TORAY ADVANCED MATERIALS RES LAB CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems in the prior art that thermal diffusion causes damage to the formed PN junction, high cost, uneven diffusion, pollution, etc., the present invention provides a semiconductor doping composition suitable for laser diffusion

Method used

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  • Semiconductor doping composition, preparation method thereof and solar cell
  • Semiconductor doping composition, preparation method thereof and solar cell
  • Semiconductor doping composition, preparation method thereof and solar cell

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preparation example Construction

[0053] The invention discloses a method for preparing a semiconductor doping composition, which comprises the following steps:

[0054] a. Preparation of the silicon boride microparticles of the outer layer oxidation:

[0055] Oxidize silicon boride microparticles at 300-1000 degrees Celsius for 0.2-24 hours to obtain the outer layer oxidized silicon boride microparticles, the thickness of the outer layer oxidized oxide layer is 5%-70% of the particle radius, the The molecular formula of silicon boride particles is SiBx, where x=2, 3, 4, 6;

[0056] b. Mix the solvent, the viscosity regulator, and the oxidized silicon boride microparticles on the outer layer evenly under stirring to prepare a slurry;

[0057] c. Kneading, dispersing, and filtering the slurry to prepare the semiconductor doping composition.

[0058] "Laser Doping"

[0059] The semiconductor doping composition described in the present invention can be used for thermal doping and laser doping of solar cells, p...

Embodiment 1-10、 comparative example 1-3

[0074] Example 1 is used to illustrate the preparation and evaluation of the semiconductor doping composition of the present invention, but specific conditions (such as feeding order, stirring temperature, stirring time, mixing conditions, filtering conditions, laser diffusion conditions, etc.) are not limited to the following methods : In a 250ml flask, add 50g of diethylene glycol methyl ethyl ether, then add 10g of oxidized silicon boride particles while stirring, add 20g of propylene glycol, and then add 10g of talcum powder particles. Stir at 60-80°C for 3 hours, then cool to room temperature naturally. Use a three-roll machine for mixing (use ceramic rollers, roller spacing 10 microns, speed difference 1:3:6), filter after mixing (use 400 mesh filter cloth), and the obtained slurry is the same as described in the present invention. Semiconductor doping composition, stored in an explosion-proof refrigerator.

[0075] The resulting paste is printed on the surface of silic...

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Abstract

The invention discloses a semiconductor doping composition. The semiconductor doping composition contains a solvent, a viscosity modifier and outer layer oxidized silicon boride microparticles. By using the semiconductor doping composition, high-boron-concentration doping can be realized by using a laser doping method.

Description

technical field [0001] The invention relates to a semiconductor doping composition, a preparation method thereof and a solar cell, in particular to a semiconductor doping composition which can be applied to a solar cell by using a laser diffusion method. Background technique [0002] In conventional manufacturing of semiconductors or solar cells, thermal diffusion is generally used for doping boron. The thermal diffusion method affects or destroys the formed PN junction, high cost, uneven diffusion, pollution and other problems in some selective emitter processing. For example: the backside selective emitter of p-type PERC cell is made after the passivation and anti-reflection film are formed. If thermal diffusion is used, because the boron diffusion temperature is higher than the phosphorus diffusion temperature, it will destroy the front side formed by phosphorus diffusion. PN junction, thus affecting battery performance. Therefore, there is no mass-produced high-concent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224H01L21/22
CPCH01L31/186H01L31/022425H01L21/22Y02E10/50Y02P70/50
Inventor 徐芳荣李平池田武史
Owner TORAY ADVANCED MATERIALS RES LAB CHINA