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Double-layer passivation film material and preparation method thereof

A passivation film and double-layer technology, which is applied to laser parts, semiconductor lasers, electrical components, etc., can solve the problems of poor passivation effect, poor reliability, and unstable process, and achieve small interface stress, not easy to fall off, light The effect of good transmission characteristics

Pending Publication Date: 2021-12-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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Problems solved by technology

[0007] Based on the above problems, the present disclosure provides a double-layer passivation thin film material and a preparation method thereof, so as to alleviate technical problems such as poor passivation effect, unstable process, and poor reliability of passivation materials for optoelectronic devices in the prior art.

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  • Double-layer passivation film material and preparation method thereof
  • Double-layer passivation film material and preparation method thereof
  • Double-layer passivation film material and preparation method thereof

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Embodiment Construction

[0042] The disclosure provides a double-layer passivation film material and a preparation method thereof, using GaN and TiO with excellent performance 2 Passivation materials, develop new passivation structures, and change the passivation structures that rely on plating a single-structure passivation film in the past. The object of the present invention is to provide a double-layer film passivation structure and its preparation method, which can greatly reduce the surface state density at the cavity surface of the laser, while controlling the process difficulty and cost at a low level.

[0043] GaN belongs to group III-V compound semiconductor materials, and its forbidden band width Eg=3.4eV is much higher than that of GaAs (Eg=1.42eV). GaN film has many excellent physical and chemical properties: (1) High thermal conductivity (about 500W / mK), much higher than the existing passivation film AlN (about 300W / mK), ZnO (about 6W / mK), far Higher than the thermal conductivity of the...

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Abstract

The invention provides a double-layer passivation film material which is characterized by comprising a semiconductor optoelectronic device base material which comprises a substrate and a cavity surface; a GaN thin film prepared on the surface of the cavity surface; and a TiO2 thin film prepared on the surface of the GaN thin film, wherein the TiO2 thin film and the GaN thin film form a double-layer passivation thin film. The invention also provides a preparation method of the double-layer passivation film material. The preparation method comprises the following steps: S1, pre-treating the cavity surface of the semiconductor optoelectronic device substrate; S2, preparing a GaN thin film on the cavity surface of the semiconductor optoelectronic device base material through an ion-assisted technology; and S3, preparing a TiO2 thin film on the GaN thin film, and completing the preparation of the double-layer passivation thin film material.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a double-layer passivation film material and a preparation method thereof. Background technique [0002] Semiconductor optoelectronic devices have the characteristics of small size, high photoelectric conversion efficiency, long service life and high-speed modulation, and are widely used in laser link communication, precision machining, aerospace and other fields. Compared with solid-state lasers, semiconductor optoelectronic devices have lower output power and are prone to reliability problems. Especially when semiconductor optoelectronic devices work at high currents, due to the high surface state density of the laser cavity surface, the carrier non-radiation increases, which intensifies the light absorption of the cavity surface and causes the temperature to rise, causing optical catastrophe damage to the semiconductor optoelectronic device ( Catastrophic Opti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/028H01S5/024
CPCH01S5/0283H01S5/02469
Inventor 谭满清游道明王栋
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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