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Production method of bismuth oxygen selenium nanosheet self-energized photoelectric detector

A photodetector, self-powered technology, applied in the use of electrical radiation detectors for photometry, nanotechnology, nanotechnology, etc., can solve the problem of poor environmental stability of black phosphorus, slow response speed of molybdenum disulfide, graphene light Problems such as poor absorption, to achieve the effect of low cost, fast response and easy operation

Pending Publication Date: 2021-12-17
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, photodetectors based on traditional two-dimensional materials still have shortcomings, such as poor light absorption of graphene, poor environmental stability of black phosphorus, and slow response speed of molybdenum disulfide.

Method used

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  • Production method of bismuth oxygen selenium nanosheet self-energized photoelectric detector
  • Production method of bismuth oxygen selenium nanosheet self-energized photoelectric detector
  • Production method of bismuth oxygen selenium nanosheet self-energized photoelectric detector

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Embodiment 1

[0030] This embodiment provides a Bi 2 o 2 The preparation method of Se nanosheet, described method adopts hydrothermal method, supplemented with PVP control, has prepared Bi 2 o 2 Se nanosheets. The specific implementation steps are as follows:

[0031] Step 1: Weigh 0.75 g of PVP (k30), add it to 20 mL of deionized water, and magnetically stir for 15 minutes to obtain a PVP solution.

[0032] Step 2: Add 0.485 g Bi(NO 3 ) 3 ·5H 2 O, 3 g LiNO 3 and 6g KNO 3 Add it into the PVP solution obtained in step 1, and continue magnetic stirring for 15 min to obtain a mixed solution.

[0033] Step 3: Mix 0.0395 g Se powder, 1 g NaOH and 0.15 g anhydrous Na 2 SO 3 Added into 10 mL of deionized water, heated at 90 °C for 30 min to obtain a mixed solution.

[0034] Step 4: Mix the two mixed solutions obtained in Step 2 and Step 3 together and magnetically stir for 30 min to obtain a precursor solution.

[0035] Step 5: Add the precursor solution obtained in Step 4 into a reac...

Embodiment 2

[0039] This embodiment provides a Bi 2 o 2 Preparation method of Se nanosheet self-powered photodetector, said method prepares Bi with working electrode, counter electrode and electrolyte 2 o 2 Se nanosheet self-powered photodetector; the working electrode is a spin-coated Bi 2 o 2 The FTO conductive glass of Se nanosheets, the counter electrode is a platinum electrode, and the electrolyte is a polysulfide electrolyte. Concrete preparation steps are as follows:

[0040] Step 1: Add 0.01 g Bi 2 o 2 Se nanosheets were dispersed in 1 mL of absolute ethanol and sonicated for 20 min to obtain a suspension.

[0041] Step 2: Set the parameters of the homogenizer to 800 rpm and 10 s, spin-coat the suspension obtained in step 1 on the FTO conductive glass with a size of 2 cm×1.5 cm, dry it at 60 °C, and repeat the spin coating -Dried for 3 times to obtain a working electrode.

[0042] Step 3: Connect the working electrode and the platinum electrode through a heat-sealing film ...

Embodiment 3

[0044] This embodiment is Bi 2 o 2 The test of self-powered photodetectors of Se nanosheets was irradiated with light of ultraviolet 365 nm, blue light 470 nm, green light 530 nm, red light 625 nm, near-infrared 850 nm and 940 nm wavelengths as the simulated light source for 10 s, and then turned off the light source 10 s as a cycle. At a bias voltage of 0 V and an optical power of 15 mW / cm 2 Under the conditions of measuring the change of current, a total of 10 cycles of switching cycles are performed.

[0045] image 3 Bi for different wavelengths of incident light 2 o 2 The current density curve of Se nanosheets, given by image 3 It can be seen that Bi 2 o 2 Se nanosheets have a large photocurrent response from ultraviolet to infrared, and the photocurrent density under ultraviolet light is the largest, about 164.1μA / cm 2 ; As the wavelength of the incident light increases, Bi 2 o 2 The photocurrent response of Se nanosheets decreases, and its photocurrent densi...

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Abstract

The invention discloses a production method of a bismuth oxygen selenium nanosheet self-energized photoelectric detector. The method comprises the following steps: preparing a Bi2O2Se nanosheet by adopting a hydrothermal method, taking FTO conductive glass spin-coated with the Bi2O2Se nanosheet as a working electrode, connecting the working electrode with a counter electrode through a heat sealing film, and injecting an electrolyte into an internal cavity to produce the self-energized photoelectric detector. The Bi2O2Se nanosheet is prepared by a hydrothermal method, the operation is simple and convenient, the cost is low, and the process is controllable; and the size of the Bi2O2Se nanosheet can be regulated and controlled through the reaction temperature and the PVP content. The Bi2O2Se nanosheet self-energized photoelectric detector produced by the invention is high in response speed and high in responsivity, has relatively large photocurrent response in ultraviolet, visible and infrared states, and is remarkably superior to a narrow-band photoelectric detector in the aspect of detection range.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and detector preparation, and relates to a Bi 2 o 2 Fabrication of Se nanosheet self-powered photodetectors. Background technique [0002] Since the discovery of graphene, two-dimensional materials have been applied to photodetectors due to their excellent properties such as high mobility, ultra-thin thickness, and tunable bandgap. However, photodetectors based on traditional two-dimensional materials still have shortcomings, such as poor light absorption of graphene, poor environmental stability of black phosphorus, and slow response speed of molybdenum disulfide. [0003] The study found that bismuth oxyselenide (Bi 2 o 2 Se) possesses high sensitivity, ultrafast response, and excellent environmental stability, while being able to achieve a broad spectral response, and can be a candidate material for next-generation photodetectors. Bi 2 o 2 Se is a layered semiconductor ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42B82Y30/00B82Y40/00
CPCG01J1/42B82Y30/00B82Y40/00
Inventor 王金忠张翔宇高世勇
Owner HARBIN INST OF TECH