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Non-centrosymmetric superconducting topological electronic material analysis method and system

A non-centrosymmetric, electronic material technology, applied in the fields of computational physics and materials science, can solve the problems of difficult experimental errors, high time and economic costs, and achieve the effects of saving manpower and material resources, improving efficiency, and simplifying the screening process

Pending Publication Date: 2021-12-17
RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, for TMDCs materials such as VSe 2 It is not easy to intercalate metal elements to prepare new superconducting topological electronic materials with non-centrosymmetric structure
Existing design methods require a large number of tentative experiments, the time cost and economic cost are high, and it is difficult to achieve the expected results due to experimental errors

Method used

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  • Non-centrosymmetric superconducting topological electronic material analysis method and system
  • Non-centrosymmetric superconducting topological electronic material analysis method and system
  • Non-centrosymmetric superconducting topological electronic material analysis method and system

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Embodiment 1

[0047] Such as figure 1Shown, a kind of analysis method of non-centrosymmetric superconducting topological electronic material of the present invention comprises steps:

[0048] S1. Build XVSe 2 Non-centrosymmetric crystal structure models of electronic materials and determination of their stability.

[0049] Among them, such as figure 2 As shown, the steps of judging its stability in step S1 include:

[0050] A1. Calculate XVSe 2 The formation energy of electronic materials, and according to the formation energy, the XVSe 2 Thermodynamic stability of electronic materials;

[0051] Specifically, calculate XVSe in step A1 2 The formula for the formation energy of electronic materials is:

[0052]

[0053] Among them, E f for compound XVSe 2 the formation energy, for XVSe 2 The total energy of the electronic material, μ X , μ V with Represent the chemical potentials of elements V, X and Se, respectively.

[0054] Here if its formation energy E f If it is gr...

Embodiment 2

[0076] Such as Figure 9 As shown, the present invention also provides a kind of analysis system of non-centrosymmetric superconducting topological electronic material, it is characterized in that, comprises:

[0077] Stability detection module, used to build VSe 2 Non-centrosymmetric crystal structure model of electronic materials, and determine its stability;

[0078] The energy band calculation module is used to calculate the ground state energy band structure and energy eigenvalues ​​of the crystal structures that meet the stability requirements;

[0079] The topological detection module is used to construct a tight-binding model and determine XVSe based on the calculated ground state band structure and energy eigenvalues 2 Topology of electronic materials;

[0080] Superconducting property prediction module, used to obtain topological XVSe based on density functional perturbation theory and electron-phonon coupling theory 2 Superconducting transition temperature value...

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Abstract

The invention belongs to the field of computational physics and material science, and provides a non-centrosymmetric superconducting topological electronic material analysis method, which comprises the following steps: S1, building a non-centrosymmetric crystal structure model of an XVSe2 electronic material, and judging the stability of the model; s2, screening out a crystal structure meeting the stability, and calculating a ground state energy band structure and an energy eigenvalue of the XVSe2 electronic material; s3, on the basis of the ground state energy band structure and the energy eigenvalue obtained through calculation, a tight constraint model is constructed, and the topology of the XVSe2 electronic material is judged; and S4, according to the density functional perturbation theory and the electron phonon coupling theory, obtaining the superconducting transition temperature value of the XVSe2 electronic material meeting the topology. The invention further provides anon-centrosymmetric superconducting topological electronic material analysis system. The analysis system has the advantages that the structural stability of the non-centrosymmetric XVSe2 material containing the specific element X can be judged very simply, the pertinence is higher, a large amount of manpower and material resources can be saved, and the material preparation efficiency is improved.

Description

technical field [0001] The invention relates to the fields of computational physics and material science, in particular to an analysis method and system for a noncentrosymmetric superconducting topological electronic material. Background technique [0002] Transition-metal dichalcogenides TMDCs (Transition-metal dichalcogenides), generally refers to the element ratio of MX 2 The binary layered compound, the common one is MoS 2 、VSe 2 Wait. MX 2 M in elements generally refers to metal elements of Group IV, V, VI, VII, IX or X, such as titanium, zirconium, hafnium of Group IV, molybdenum and tungsten of Group VI, etc. The X elements refer to sulfur, selenium and tellurium. In recent years, due to their unique physical properties and excellent material properties, such as superconductivity, unsaturated magnetoresistance effect, topologically protected electronic states and quantum spin Hall effect, TMDCs materials have been widely used in condensed matter physics and spin ...

Claims

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Application Information

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IPC IPC(8): G16C60/00
CPCG16C60/00Y02E40/60
Inventor 曹崇德宋杰玺秦彦卿汪姚岑白晓军汪芳
Owner RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN
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