A layered micro-nano composite structure for enhancing boiling heat transfer and its processing method

Abstract

The invention discloses a layered micro-nano composite structure for enhancing boiling heat transfer and a processing method thereof. The layered micro-nano composite structure includes a silicon substrate, a columnar microstructure grown on the silicon substrate, and a surface around the top surface of the columnar microstructure. Nanoholes. The composite structure is based on the columnar microstructure arranged in an array, which can effectively improve the liquid replenishment rate in the heat flux density region; the nano-cavities generated around the top surface of the columnar microstructure can effectively improve the vaporization core density, thereby increasing the Boiling heat transfer coefficient. The nano-scale holes are only distributed around the top surface of the columnar microstructure, which can effectively prevent the large-area lateral merger of bubbles in the high heat flux area at the bottom of the columnar microstructure, effectively delay the occurrence of heat transfer deterioration, and ensure that the liquid replenishment capacity will not weakened by the introduction of nanostructures. The layered micro-nano composite structure is formed by one-time processing by a dry etching method, so as to realize precise regulation of the micro-structure, and the processing method is simple to operate and has a low manufacturing cost.

Description

technical field

[0001] The invention belongs to the technical field of phase change enhancement heat transfer, relates to a technology suitable for boiling heat transfer enhancement, and in particular relates to a layered micro-nano composite structure for enhancing boiling heat transfer and a processing method thereof. Background technique

[0002] As a very efficient heat dissipation method, boiling heat transfer is widely used in the heat dissipation of ultra-high heat flux devices such as aerospace, military equipment, high-power LED lamps and integrated circuits. However, with the continuous improvement of the integration and performance of electronic devices, the heat flux density of ultra-high heat flux devices is constantly rising, which also poses new challenges to the boiling heat transfer technology. Therefore, the enhancement of boiling heat transfer, including reducing the heat transfer wall temperature, increasing the boiling heat transfer coefficient and criti...

Examples

Embodiment 1

[0035] Objective: To etch a regular array of square pillar microstructures with a pillar width of 20 μm, a pillar height of 120 μm, and a distance between the centers of the micropillars of 60 μm.

[0036] Step 1: Design a corresponding mask pattern according to the etching target, and process the mask.

[0037] Step 2: Pre-treat the silicon wafer with HMDS for 10min; then stick it on the glue spinner, rotate forward for 6s at a speed of 600r / min, and reverse for 30s at a speed of 4000r / min, so that the photoresist AZ6130 It is uniformly coated on the front side of the silicon wafer with a coating thickness of 7.5 μm; then the silicon wafer is placed on a contact hot plate at 100°C for 5 minutes before drying to obtain a relatively firm photoresist layer. Then, the silicon wafer was exposed on an MA6 lithography machine for 23s, and placed in a 2.38% TMAH developer solution for 150s to complete the development process. After the inspection is correct, carry out the hard film ...

Embodiment 2

[0039] Goal: To etch a regular array of square-pillar microstructures with a column width of 50 μm, a column height of 60 μm, and a distance between the centers of the micro-pillars of 100 μm, while etching nano-scale holes on the four edges of the top surface of the square column.

[0040] Step 1: Design a corresponding mask pattern according to the etching target, and process the mask.

[0041]Step 2: Pre-treat the silicon wafer with HMDS for 10min; then stick it on the glue dispenser, rotate it forward for 6s at a speed of 600r / min, and reverse it for 30s at a speed of 1000r / min, so that the photoresist AZ6130 It is uniformly coated on the front side of the silicon wafer, and the thickness of the coating is 5.2 μm; then the silicon wafer is placed on a contact hot plate at 100 ° C and dried for 5 minutes to obtain a relatively strong photoresist layer. Then the silicon wafer was exposed on the MA6 lithography machine for 4.2s, and placed in 3038 developer solution for 70s t...

Embodiment 3

[0044] Objective: To etch a regular array of square pillar microstructures with a pillar width of 100 μm, a pillar height of 60 μm, and a center distance of 200 μm between the micropillars, while etching nano-scale holes on the four edges of the top surface of the square pillars.

[0045] Step 1: Design a corresponding mask pattern according to the etching target, and process the mask.

[0046] Step 2: Pre-treat the silicon wafer with HMDS for 10min; then stick it on the glue dispenser, rotate it forward for 6s at a speed of 600r / min, and reverse it for 30s at a speed of 1000r / min, so that the photoresist AZ6130 It is uniformly coated on the front side of the silicon wafer, and the thickness of the coating is 5.2 μm; then the silicon wafer is placed on a contact hot plate at 100 ° C and dried for 5 minutes to obtain a relatively strong photoresist layer. Then the silicon wafer was exposed on the MA6 lithography machine for 4.2s, and placed in 3038 developer solution for 70s to...

technical field

[0001] The invention belongs to the technical field of phase change enhancement heat transfer, relates to a technology suitable for boiling heat transfer enhancement, and in particular relates to a layered micro-nano composite structure for enhancing boiling heat transfer and a processing method thereof. Background technique

[0002] As a very efficient heat dissipation method, boiling heat transfer is widely used in the heat dissipation of ultra-high heat flux devices such as aerospace, military equipment, high-power LED lamps and integrated circuits. However, with the continuous improvement of the integration and performance of electronic devices, the heat flux density of ultra-high heat flux devices is constantly rising, which also poses new challenges to the boiling heat transfer technology. Therefore, the enhancement of boiling heat transfer, including reducing the heat transfer wall temperature, increasing the boiling heat transfer coefficient and criti...

Examples

Embodiment 1

[0035] Objective: To etch a regular array of square pillar microstructures with a pillar width of 20 μm, a pillar height of 120 μm, and a distance between the centers of the micropillars of 60 μm.

[0036] Step 1: Design a corresponding mask pattern according to the etching target, and process the mask.

[0037] Step 2: Pre-treat the silicon wafer with HMDS for 10min; then stick it on the glue spinner, rotate forward for 6s at a speed of 600r / min, and reverse for 30s at a speed of 4000r / min, so that the photoresist AZ6130 It is uniformly coated on the front side of the silicon wafer with a coating thickness of 7.5 μm; then the silicon wafer is placed on a contact hot plate at 100°C for 5 minutes before drying to obtain a relatively firm photoresist layer. Then, the silicon wafer was exposed on an MA6 lithography machine for 23s, and placed in a 2.38% TMAH developer solution for 150s to complete the development process. After the inspection is correct, carry out the hard film ...

Embodiment 2

[0039] Goal: To etch a regular array of square-pillar microstructures with a column width of 50 μm, a column height of 60 μm, and a distance between the centers of the micro-pillars of 100 μm, while etching nano-scale holes on the four edges of the top surface of the square column.

[0040] Step 1: Design a corresponding mask pattern according to the etching target, and process the mask.

[0041]Step 2: Pre-treat the silicon wafer with HMDS for 10min; then stick it on the glue dispenser, rotate it forward for 6s at a speed of 600r / min, and reverse it for 30s at a speed of 1000r / min, so that the photoresist AZ6130 It is uniformly coated on the front side of the silicon wafer, and the thickness of the coating is 5.2 μm; then the silicon wafer is placed on a contact hot plate at 100 ° C and dried for 5 minutes to obtain a relatively strong photoresist layer. Then the silicon wafer was exposed on the MA6 lithography machine for 4.2s, and placed in 3038 developer solution for 70s t...

Embodiment 3

[0044] Objective: To etch a regular array of square pillar microstructures with a pillar width of 100 μm, a pillar height of 60 μm, and a center distance of 200 μm between the micropillars, while etching nano-scale holes on the four edges of the top surface of the square pillars.

[0045] Step 1: Design a corresponding mask pattern according to the etching target, and process the mask.

[0046] Step 2: Pre-treat the silicon wafer with HMDS for 10min; then stick it on the glue dispenser, rotate it forward for 6s at a speed of 600r / min, and reverse it for 30s at a speed of 1000r / min, so that the photoresist AZ6130 It is uniformly coated on the front side of the silicon wafer, and the thickness of the coating is 5.2 μm; then the silicon wafer is placed on a contact hot plate at 100 ° C and dried for 5 minutes to obtain a relatively strong photoresist layer. Then the silicon wafer was exposed on the MA6 lithography machine for 4.2s, and placed in 3038 developer solution for 70s to...

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