Terahertz detector based on phase characteristics of exciton insulator and its preparation method

A technology of terahertz detectors and insulators, applied in the field of terahertz detectors, can solve problems such as low sensitivity, inability to meet terahertz technology, slow response speed, etc., and achieve the effect of wide-spectrum detection and high-sensitivity detection

Active Publication Date: 2022-02-15
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0005] Existing terahertz detectors based on thermal effects or superconducting types face their own problems, including slow response speed, low sensitivity, and low temperature requirements, which cannot meet the needs of existing terahertz techn

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  • Terahertz detector based on phase characteristics of exciton insulator and its preparation method
  • Terahertz detector based on phase characteristics of exciton insulator and its preparation method
  • Terahertz detector based on phase characteristics of exciton insulator and its preparation method

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preparation example Construction

[0043] ginseng figure 2 As shown, the present invention also discloses a preparation method of a terahertz detector based on the phase characteristics of an excitonic insulator, including:

[0044] S1. Provide substrate;

[0045] S2, preparing an oxide layer on the substrate by a thermal oxidation method;

[0046] S3, preparing a tantalum-nickel-selenium channel layer on the oxide layer;

[0047] S4. Prepare an electrode layer on part of the oxide layer and part of the tantalum-nickel-selenide channel layer.

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Abstract

The present invention discloses a terahertz detector based on excitonic insulator phase characteristics and a preparation method thereof. The terahertz detector can effectively detect terahertz waves based on the excitonic insulator phase characteristics of tantalum nickel selenium at room temperature. The preparation method includes: S1, providing a substrate; S2, preparing an oxide layer on the substrate by thermal oxidation; S3, preparing a tantalum-nickel-selenide channel layer on the oxide layer; S4, preparing a part of the oxide layer and part of the tantalum-nickel An electrode layer is prepared on the selenium channel layer. The invention is based on the excellent physical properties of tantalum-nickel-selenium, its narrow direct bandgap and excitonic insulator phase at room temperature are used in room temperature terahertz detectors, which realizes high-speed, wide-spectrum and high-sensitivity detection at room temperature, and is room temperature terahertz The application of the detector laid the foundation.

Description

technical field [0001] The invention belongs to the technical field of terahertz detectors, and in particular relates to a terahertz detector based on the phase characteristics of an exciton insulator and a preparation method thereof. Background technique [0002] Terahertz (THz) radiation usually refers to electromagnetic waves with a wavelength of 30µm∼3mm (0.1 THz∼10 THz), between millimeter waves and infrared waves, and are in the crossover and transition region of microwave electronics and infrared photonics . Terahertz waves have low energy (1 THz~4 meV, will not cause damage to the structure of biological cells), high transmission (can penetrate many non-metallic and non-polar materials), safety, fingerprint spectrum and high bandwidth characteristics And other characteristics, so that it has a wide range of applications in non-destructive testing, security inspection, space communication, biomedicine and other fields. [0003] The core devices in terahertz applicat...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032H01L31/113G01J1/42
CPCH01L31/18H01L31/032H01L31/113G01J1/42Y02P70/50
Inventor 张凯董卓陈捷
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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