Manufacturing process of ultra-miniature semiconductor cooler
A manufacturing process and semiconductor technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric devices that only use the Peltier or Seebeck effect, etc., can solve the problems of easy deformation, easy generation of void products, easy dislocation, etc. Impact performance, shorten the ultrasonic cleaning time, reduce the effect of product deformation
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Embodiment 1
[0033] A manufacturing process of an ultra-miniature semiconductor refrigerator in this embodiment, wherein the crystal grains are bismuth telluride grains, and the ceramic substrate on the hot surface or the ceramic substrate on the cold surface is made of aluminum nitride material, including the following steps:
[0034] (1) Grain preparation: Cut the ingot into wafers, and cut the ingot into wafers with a multi-wire cutting machine. The diamond wire diameter in the multi-wire cutting machine is 0.10mm, the feed speed is 600mm / s, and the cutting speed is 0.10mm. mm / s, the thickness of the wafer is ≥0.15mm, and then the wafer is electroplated, and the wafer is diced after electroplating. Ultrasonic is used for cleaning, and the cleaning time is 4 minutes, and the UV film is applied to the grain to obtain the spare grain;
[0035] (2) Print the hot-surface ceramic plate, and then take out the spare grain from the UV film and fix it on the hot-surface ceramic plate. N-type and ...
Embodiment 2
[0037] A manufacturing process of an ultra-miniature semiconductor refrigerator in this embodiment, wherein the crystal grains are bismuth telluride grains, and the ceramic substrate on the hot surface or the ceramic substrate on the cold surface is made of aluminum nitride material, including the following steps:
[0038] (1) Grain preparation: Cut the ingot into wafers, and cut the ingot into wafers with a multi-wire cutting machine. The diamond wire diameter in the multi-wire cutting machine is 0.11mm, the feeding speed is 700mm / s, and the cutting speed is 0.14 mm / s, the thickness of the wafer is ≥0.15mm, and then the wafer is electroplated, and the wafer is diced after electroplating. Ultrasonic is used for cleaning, and the cleaning time is 5 minutes, and the UV film is applied on the grain to obtain the spare grain;
[0039] (2) Print the hot-surface ceramic plate, and then take out the spare grain from the UV film and fix it on the hot-surface ceramic plate. N-type and ...
Embodiment 3
[0041] A manufacturing process of an ultra-miniature semiconductor refrigerator in this embodiment, wherein the crystal grains are bismuth telluride grains, and the ceramic substrate on the hot surface or the ceramic substrate on the cold surface is made of aluminum nitride material, including the following steps:
[0042](1) Grain preparation: cut the ingot into wafers, and cut the ingot into wafers with a multi-wire cutting machine. The diamond wire diameter in the multi-wire cutting machine is 0.12mm, the feed speed is 800mm / s, and the cutting speed is 0.18mm. mm / s, the thickness of the wafer is ≥0.15mm, and then the wafer is electroplated, and the wafer is diced after electroplating. Ultrasonic is used for cleaning, and the cleaning time is 6 minutes, and the UV film is applied to the grain to obtain the spare grain;
[0043] (2) Print the hot-surface ceramic plate, and then take out the spare grain from the UV film and fix it on the hot-surface ceramic plate. N-type and P...
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