Semiconductor laser based on distributed phase compensation technology

Abstract

The invention discloses a semiconductor laser based on a distributed phase compensation technology, and relates to the field of optical fiber communication and photon integration. The semiconductor laser comprises a metal n electrode, a buffer layer, a lower respective limiting layer, a light-emitting active layer, an upper respective limiting layer, a corrosion barrier layer, a grating layer, a waveguide layer, a transition layer, a p-type ohmic contact layer, a metal p electrode, a high-reflection film and an anti-reflection film. The high-reflection film and the anti-reflection film are arranged at the two ends of the semiconductor laser respectively, so that the energy utilization rate and the output power of the semiconductor laser are improved; and electrical isolation is formed by etching the waveguide, the semiconductor laser is divided into two or more sections, and the current injection distribution of each section is changed, so that the random reflection phase brought by the high-reflection coating can be effectively compensated, the problem of unstable lasing mode caused by the random reflection phase is solved, and the micro regulating and control of wavelength can be realized.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, relates to the fields of optical fiber communication and photon integration, and in particular relates to a semiconductor laser based on distributed phase compensation technology. Background technique [0002] In recent decades, optical communication technology has developed very rapidly, and has become the mainstream transmission method in many aspects. Its advantages are mainly reflected in: 1. The bandwidth of light is very high, that is, the information transmission capacity is large; 2. The transmission loss of light in the optical fiber is very low, especially for long-distance transmission. The advantages of optical fiber are more obvious, and the cost is low. Lightweight, strong anti-interference ability; Third, thanks to the development of semiconductor lasers, the manufacturing difficulty and cost of the core components of optical communication light sources and photodetectors h...

AI Technical Summary

Problems solved by technology

However, the reflection phase of the end face introduced by the highly reflective coating is random and fluctuates in the range of 0-2π according to the thickness of the coating. When the reflection phase of the end face is near π, the laser can achieve good single-mode lasing, and if the end face If the reflection phase is close to 0 or 2π, the single-mode characteristic of the laser will be relatively poor

Therefore, the randomness of this coating thickness will bring great instability to the output mode of the laser

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