Improved high-electron-mobility light-emitting transistor

A technology with high electron mobility and light-emitting transistors, which can be applied to circuits, electrical components, semiconductor devices, etc., and can solve problems such as difficult light intensity and on-off control

Pending Publication Date: 2022-02-15
SHANGHAI UNIV
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Problems solved by technology

At present, there is a high electron mobility light-emitting transistor structure in which a high-mobility transistor is coupled with a gallium nitride light-emitting diode. This structure may include one or more layers of quantum wells. By adding a quantum well layer, the light emission at the LED end can be effectively regulated. Intensity, but as the number of quantum well layers inc

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[0036] Next, the technical solutions in the embodiments of the present invention will be described in connection with the drawings of the embodiments of the present invention, and it is understood that the described embodiments are merely the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art are in the range of the present invention without making creative labor premise.

[0037] It is an object of the present invention to provide an improved high electron mobility luminescent transistor capable effectively controlling the luminescence strength and offset of the LED light emitting diode.

[0038] In order to make the above objects, features, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0039] like figure 1 As shown, t...

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Abstract

The invention relates to an improved high-electron-mobility light-emitting transistor, comprising: a substrate; a high-electron-mobility transistor (HEMT) region which is arranged on the substrate; and a gallium nitride LED area, arranged on the substrate. Each of the HEMT region and the LED region comprises at least one 2DEG layer, and the HEMT region and the LED region are connected through the 2DEG layers; the HEMT region further comprises a grid electrode; the grid electrode is of a three-dimensional fin type structure, wraps the 2DEG layer in the HEMT region from top to bottom and is used for controlling whether the LED region emits light or not and controlling the light emitting intensity. According to the invention, a three-dimensional fin-type gate structure is adopted, and the gate wraps the three sides of the conducting channel formed by the 2DEG layer, so that the conducting channel of the whole HEMT region is controlled to be switched on and switched off, and then whether the LED region emits light or not and the light emitting intensity are controlled.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an improved light-emitting transistor with high electron mobility. Background technique [0002] Aluminum Gallium Nitride / Gallium Nitride High Speed ​​Electron Mobility Transistor (AIGaN / GaN HEMT) has extremely high advantages in the application environment of high temperature, high frequency and high power. In addition to being used in field effect transistors, gallium nitride is also widely used in devices such as light emitting diodes. At present, there is a high electron mobility light-emitting transistor structure in which a high-mobility transistor is coupled with a gallium nitride light-emitting diode. This structure may include one or more layers of quantum wells. By adding a quantum well layer, the light emission at the LED end can be effectively regulated. Intensity, but as the number of quantum well layers increases, it is difficult for the gate to control the ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/32H01L29/778
CPCH01L33/0041H01L33/06H01L33/32H01L29/7783
Inventor 任开琳殷录桥张建华路秀真郭爱英张文魁安原
Owner SHANGHAI UNIV
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