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Preparation method of selective emitter

An emitter and selective technology, applied in the field of solar cells, can solve the problems of low performance such as selective emitter recombination and open voltage, etc., to achieve the effect of improving performance

Pending Publication Date: 2022-02-25
河北绍博光伏科技有限公司
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for preparing a selective emitter to solve the problem of low performance such as recombination and opening pressure of the existing selective emitter prepared by laser propulsion

Method used

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  • Preparation method of selective emitter
  • Preparation method of selective emitter

Examples

Experimental program
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Embodiment 1

[0032] refer to figure 1 , which shows a method for preparing a selective emitter provided by an embodiment of the present invention, including:

[0033] S1, providing a silicon substrate 10 for a solar cell.

[0034] In the embodiment of the present invention, refer to figure 2 , wherein the solar cell silicon substrate 10 is cleaned, and the surface morphology of the solar cell silicon substrate 10 includes: texturing, etching or polishing.

[0035] S2, printing silicon paste material 20 on a predetermined area of ​​the silicon substrate of the solar cell.

[0036] Among them, refer to figure 2 and 3 , the preset area means that after the preparation of the selective emitter is completed, the metal electrode should be prepared on the corresponding area. After the preparation of the selective emitter is completed, the redundant silicon paste material 20 is cleaned, and after cleaning, the metal electrode 30 is prepared in a predetermined area.

[0037] In the embodime...

Embodiment 2

[0052] Figure 4It shows that the embodiments of the present invention provide another aspect of the present invention to provide a method for preparing a selective emitter, the method comprising:

[0053] S1, providing a solar cell silicon substrate.

[0054] In the embodiment of the present invention, the surface topography of the silicon substrate of the solar cell includes: texturing, etching or polishing.

[0055] refer to figure 2 , wherein the solar cell silicon substrate 10 is cleaned,

[0056] S2, printing a silicon paste material containing boron particles on a predetermined area of ​​the silicon substrate of the solar cell.

[0057] In an embodiment of the present invention, the boron-containing particles include: boron or boron oxide. Wherein, the silicon paste material containing boron particles includes: nanometer silicon powder, organic solvent and boron or boron oxide.

[0058] The particle size of the nano silicon powder is 1nm-5000nm; the organic solven...

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Abstract

A preparation method of a selective emitter provided by the embodiment of the invention comprises the following steps: S1, providing a solar cell silicon substrate; S2, printing a silicon slurry material in a preset area of the solar cell silicon substrate; S3, placing the solar cell silicon substrate obtained in the S2 on a quartz boat, then placing the quartz boat in a high-temperature diffusion furnace for primary heating, and introducing a gaseous state or a vapor-liquid state containing a boron source so as to deposit boron on the solar cell silicon substrate; and S4, heating the high-temperature diffusion furnace for the second time, performing doping of boron in the solar cell silicon substrate, and obtaining a selective emitter. According to the preparation method of the selective emitter provided by the embodiment of the invention, high-temperature boron doping is adopted, so that the performance of the selective emitter is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing a selective emitter. Background technique [0002] A solar cell is a semiconductor device that converts light energy into electrical energy. To obtain a high-efficiency solar cell, its surface must have good passivation and a low surface recombination rate, so as to obtain higher opening voltage, current and efficiency. [0003] In the prior art, the method of diffusion and laser propulsion is usually used to prepare the selective emitter, but in the process of laser propulsion, the laser will cause damage to the silicon substrate lattice of the solar cell, so that the recombination of carriers cannot be reduced, and the recombination is relatively low. High will reduce the opening voltage performance of the selective emitter, so that the performance of the prepared selective emitter is low. [0004] Furthermore, the choice of laser propulsion technology to pre...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1804H01L31/068Y02E10/547Y02P70/50
Inventor 黄思刘勇朴松源
Owner 河北绍博光伏科技有限公司
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