A dual-electrode co-modulated emission laser

Abstract

The invention discloses a dual-electrode co-modulation emitting laser, which belongs to the field of semiconductor lasers. It consists of two cascaded parts, the first part is a uniform straight waveguide single-mode laser, and the grating layer of the second part is a uniform layer. The first part and the second part inject different superpositions of DC and AC signals, and the two AC signals have the same polarity, phase and frequency, but different amplitudes. The second part amplifies the optical signal generated by the first part and increases the extinction ratio of the signal. The second ridge adopts a curved waveguide, and the second ridge forms an included angle with the light-emitting end face of the laser, which effectively reduces the influence of external feedback light on the device. The width of the second ridge gradually increases, increasing the saturation power of the second part. The second part works near the gain saturation region, which can play the role of chirp reduction.

Description

A two-electrode co-modulation emitting laser technical field [0001] The invention belongs to the field of semiconductor lasers, and in particular relates to a two-electrode co-modulation emitting laser. Background technique [0002] In recent years, optical access network technologies have been continuously updated. At present, the mainstream gigabit passive optical network GPON has gradually been unable to meet the meet the ever-increasing bandwidth demands. When the existing GPON is upgraded to the 10G passive optical network 10G PON, many factors need to be considered. elements, including reuse of existing resources, and compatibility issues. [0003] As a solution with obvious advantages, the hybrid passive optical network combines GPON and 10G PON. The different wavelengths of each technology are integrated in the same optical module, so that the technologies before and after the upgrade can coexist, and the two optical signals are relatively independent transmi...

AI Technical Summary

Problems solved by technology

Due to the complex process of monolithic integration of the active region and the absorption region of semiconductor lasers, the reliability and yield of EML devices have always been an urgent problem to be solved.

[0005] On the other hand, the modulation of EML is realized based on electroabsorption modulation, that is, the output optical signal of the distributed feedback laser in the previous section will be absorbed to varying degrees by the subsequent electroabsorption section, which is inherently difficult to achieve high power output, so if If the power needs to be further increased, it is usually necessary to add an integrated optical amplifier, which will affect the production yield, resulting in lower yield and higher production cost

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