GST (GeTe/Sb2Te3) quantum well thermoelectric thin film and preparation method and application thereof
A thermoelectric thin film and quantum well technology, which is applied in the directions of thermoelectric device junction lead-out material, ion implantation plating, coating, etc. The effect of improving thermoelectric performance, which is beneficial to promotion and application
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Embodiment 1
[0069] GST (GeTe / Sb 2 Te 3 ) Thickness selection and preparation of quantum well thermoelectric thin films.
[0070] This embodiment provides a GST (GeTe / Sb 2 Te 3 ) A preferred embodiment of the method for preparing a thermoelectric electron well, which includes the steps of:
[0071] A. Select the magnetron sputtering preparation process to prepare GST (GeTe / Sb 2 Te 3 ) Quantum well, choose GeTe target material with a purity of 99.95% and Sb with a purity of 99.95% 2 Te 3 Target as raw material;
[0072] B. Pump the background vacuum of the sputtering system to 7.5×10 -5 Pa, the feed flow is 20sccm Ar gas, and the pressure of the sputtering system is controlled at 0.5Pa;
[0073] C. GST (GeTe / Sb) prepared by magnetron alternate sputtering process 2 Te 3 ) thermoelectric electron trap;
[0074] D. GeTe and Sb 2 Te 3 The basic parameters of the barrier layer and potential well layer materials are that the barrier energy (V) is 0.532eV, and the effective mass of c...
Embodiment 2
[0095] The GST (GeTe / Sb) prepared in this embodiment 2 Te 3 ) quantum well thermoelectric thin film.
[0096] The preparation process of this embodiment is basically the same as that of Example 1, except that the sublayer film thickness ratio (t Sb2Te3 / t GeTe ) and layered film thickness selection, wherein the sub-layer film thickness ratio is 1:2, 1:3, 1:4, and the specific thickness is 5:10, 5:15, 5:20 for single cycle and multi cycle (4 cycle), and the annealing temperature and time are the same as in Example 1. The three groups of samples prepared were subjected to thermoelectric tests, and the results are shown in Table 3. It can be seen from the table that the thermoelectric properties prepared under the sub-layer film thickness ratio of 1:1-1:5 are excellent, and the ZT value obtained with the film thickness ratio of 1:1 tends to be higher.
[0097] table 3
[0098]
Embodiment 3
[0100] The GST (GeTe / Sb) prepared in this embodiment 2 Te 3 ) quantum well thermoelectric thin film.
[0101] The preparation process of this example is basically the same as that of Example 1, except that the annealing temperature selection process, and the ratio of the selected film thickness to the thickness of the sublayer is the same as that of Example 1. The annealing temperature is selected as 373, 573K, and 873K, and the thermoelectric test is performed on the prepared samples, and the results are shown in Table 4. As shown in the table, it can be found that as the annealing temperature rises, the thermoelectric performance will increase, but the higher the temperature, the better the thermoelectric performance is not. If the temperature exceeds a certain range (300-500°C), the thermoelectric performance will decrease.
[0102] Table 4
[0103]
[0104]
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