N-type GaAs ohmic contact electrode material and preparation method thereof

Abstract

The invention discloses an n-type GaAs ohmic contact electrode material and a preparation method thereof.The n-type GaAs ohmic contact electrode material is characterized in that two electrode areas are arranged on an n-type GaAs substrate through a mask method, AuGeNi alloy is firstly sputtered in the two electrode areas through an ion sputtering method, then Au is sputtered in the two electrode areas, and two corresponding AuGeNi / Au electrode structures are formed; and finally, performing high-temperature annealing to obtain the n-type GaAs stable ohmic contact electrode. Through detection, the n-type GaAs ohmic contact electrode prepared by the method is uniform in electrode component and flat and smooth in surface. An I-V curve between the two electrodes has a good linear and symmetrical relation, the resistivity of the electrodes is far smaller than that of a GaAs substrate, the performance indexes of the electrodes meet the electrode requirement for stable contact, and the electrodes can be successfully applied to n-type GaAs related devices. Compared with a manufacturing process in the prior art, the method disclosed by the invention is low in equipment cost and short in process, saves electrode materials, has good economic benefits and practical value, and is particularly suitable for scientific research laboratories.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology and relates to the preparation of a semiconductor material, in particular to an n-type GaAs ohmic contact electrode material and a preparation method thereof. Background technique [0002] Gallium arsenide (GaAs) is a III-V compound semiconductor with a zinc blende crystal structure. It has some properties superior to silicon and has become an important semiconductor material second only to silicon. It can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than that of silicon and germanium, and is used in photoconductive switches, integrated circuit substrates, infrared detectors, gamma photon detectors, etc. In addition, gallium arsenide has six times higher electron mobility than silicon, making it essential for ultra-high-speed, ultra-high-frequency devices and integrated circuits. It is also widely used in the military...

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that a high degree of vacuum is required to prevent the oxidation of the alloy during evaporation, and the mechanical pump cannot meet the requirements, and a molecular pump must be equipped, resulting in high equipment cost.

Moreover, during the evaporation process, the material diffuses into the entire cavity, causing serious waste and troublesome cleaning

Images