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Method for detecting electric field effect of quantum dots

A technology of electric field effect and quantum dots, which is applied in the direction of measuring electricity, measuring electrical variables, measuring devices, etc., can solve the problems of long measurement preparation time, high cost, low degree of utilization, etc., and achieves simple structure, reduced detection cost, and easy production. Effect

Pending Publication Date: 2022-03-04
ZHEJIANG UNIV OF TECH
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Problems solved by technology

[0003] At present, the measurement of the electric field effect of quantum dots needs to be completed after the assembly of quantum dots and the integration of a spectrometer for testing. The measurement preparation time is long, the cost is high, and the degree of utilization is low.

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  • Method for detecting electric field effect of quantum dots

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Embodiment Construction

[0015] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0016] Step (1) Making the substrate: select transparent material as the substrate material, process it into a cube with a length of 2-3 mm, a width of 1-2 mm, and a height of 0.1-1 mm, wash and dry it with acetone and deionized water to obtain the substrate; transparent The material is quartz or glass;

[0017] Step (2) Fabricate the electrode structure: draw the pattern of electrodes and pins on the substrate by photolithography, and then etch the required electrode structure by etching, that is, etch the substrate downward to form the electrode structure. Such as figure 1 As shown, the electrode structure includes two electrode protrusions 102 on one side of the base 101 and corresponding pin protrusions 103; the length of the strip-shaped electrode protrusions is 1-1.5mm, the width is 0.2-0.3mm, and the height 0.02 ~ 0.1mm, two electrode protrusions are arrange...

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Abstract

The invention discloses a method for detecting the electric field effect of quantum dots. The method comprises the following steps: firstly, manufacturing a detection chip, wherein two parallel electrodes are arranged on a substrate made of a transparent material; directly coating the quantum dot solution on the surface of the chip between the two electrodes; exciting light emitted by the laser source is gathered together through the collecting lens and is vertically emitted into the quantum dot solution coating of the chip; the positive electrode and the negative electrode of the power supply are respectively connected with the two pins, and an electric field is loaded to the chip for rapidly detecting the quantum dot electric field effect through the two electrodes; exciting light penetrating through the chip is collected by a collecting lens, and the absorption spectral line of the quantum dots to incident light is measured on the back surface of the chip through a spectrograph, so that the electric field effect of the quantum dots is obtained. According to the method, the detection chip is simple in structure and easy to manufacture, and the chip can be recycled, so that the detection cost is reduced, and the measurement efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a method for detecting the electric field effect of quantum dots. Background technique [0002] With the development of semiconductor technology, the quantum effects of semiconductor low-dimensional structures (such as semiconductor quantum wells, quantum wires, and quantum dots) exhibit many unique optical and electrical properties, which are currently research hotspots. Quantum dots refer to quasi-zero-dimensional nanomaterials with three-dimensional dimensions below 100nm, which are composed of a limited number of atoms. The movement of electrons in quantum dots is limited in all directions. Compared with quantum wells and wires, the quantum effect will be more obvious, and the optical effect will be significantly enhanced. The photoelectric properties of quantum dots can be regulated by an external electric field, so that the conduction band and v...

Claims

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Application Information

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IPC IPC(8): G01R29/14G01R31/28
CPCG01R29/14G01R31/2856
Inventor 李德钊祁云峰吕碧沪王煜猛陈传刚
Owner ZHEJIANG UNIV OF TECH
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