Method for detecting electric field effect of quantum dots

A technology of electric field effect and quantum dots, which is applied in the direction of measuring electricity, measuring electrical variables, measuring devices, etc., can solve the problems of long measurement preparation time, high cost, low degree of utilization, etc., and achieves simple structure, reduced detection cost, and easy production. Effect

Pending Publication Date: 2022-03-04

ZHEJIANG UNIV OF TECH

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[0003] At present, the measurement of the electric field effect of quantum dots needs to be completed after the assembly of quantum dots and t...

Abstract

The invention discloses a method for detecting the electric field effect of quantum dots. The method comprises the following steps: firstly, manufacturing a detection chip, wherein two parallel electrodes are arranged on a substrate made of a transparent material; directly coating the quantum dot solution on the surface of the chip between the two electrodes; exciting light emitted by the laser source is gathered together through the collecting lens and is vertically emitted into the quantum dot solution coating of the chip; the positive electrode and the negative electrode of the power supply are respectively connected with the two pins, and an electric field is loaded to the chip for rapidly detecting the quantum dot electric field effect through the two electrodes; exciting light penetrating through the chip is collected by a collecting lens, and the absorption spectral line of the quantum dots to incident light is measured on the back surface of the chip through a spectrograph, so that the electric field effect of the quantum dots is obtained. According to the method, the detection chip is simple in structure and easy to manufacture, and the chip can be recycled, so that the detection cost is reduced, and the measurement efficiency is improved.

Application Domain

Electronic circuit testingElectrostatic field measurements

Technology Topic

Optical spectrometerCondensing lens +8

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[0015] The present invention will be described in detail below with reference to the drawings.

[0016] Step (1) Making a substrate: Selecting a transparent material as a base material, the processing growth is 2 ~ 3mm, the width is 1 to 2 mm, the height is 0.1 to 1 mm cubes, washing and drying with acetone and deionized water, to obtain a substrate; transparent Material is quartz or glass;

[0017] Step (2) Making an electrode structure: draws the pattern of electrodes and pins on the substrate by photolithography, and then engraving the desired electrode structure by etching method, so that the substrate is etched to form an electrode structure. Such as figure 1 As shown, the electrode structure includes two electrode protrusions 102 and corresponding lead projections 103 on the substrate 101; the length of the long strip-shaped electrode protrusions is 1 to 1.5 mm, the width is 0.2 ~ 0.3mm, and the height It is 0.02 to 0.1 mm, and the two electrode projections are arranged in parallel, the spacing is 0.45 ~ 0.55mm; the two lead projections are connected at one end of the two electrode projections, and the pin projection is greater than the width of the electrode projection. The height is less than the height of the electrode projection;

[0018] Step (3) Production Electrode: figure 2 As shown, by sputtering deposition, metal or metal oxide plated to the substrate having an electrode projection and a lead projection as the electrode material 104; then bumps between the two electrodes by photolithography, two The metal or metal oxide layer between the lead projections and the substrate edge position is exposed, and the bare partial corrosion, the electrode material coating electrode protrusion 102 and the lead projection 103 are removed by the etching method. Other faces.

[0019] Step (4) Insulating layer processing: figure 2 As shown, the insulating layer 105 is formed by a side having the electrode projection and the lead projection of the substrate by deposition, and the material of the insulating layer in the present embodiment selects Al 2 O 3 The insulating layer of the two pins is then corroded by a photolithography, and the pin of the two electrodes is exposed to obtain a chip 1 having two electrodes.

[0020] Step (5) Detect quantum dot electric field effect: image 3 As shown, the quantum dot solution (the shaded portion in the figure) is directly applied to the chip surface between the two electrodes; the excitation light emitted by the laser source 2 is collected together by the concentrating mirror 3, and the quantum dot solution of the chip 1 is discharged vertically. Layer 4; The positive and negative electrodes of the power source 5 connect two pins, and the chip 1 of the fast detection quantum dot electric field effect is loaded with a suitable electric field; the excitation light transmitting the chip 1 will collect the light, and finally An electric field effect of the quantum dot is obtained by measuring the absorption line of the incident light at the back surface of the chip to obtain a quantum point. Solution in quantum point solution is quantum dots, such as CSPBBR 3 , CSPBI 3 The CDSE quantum dot, the solvent is a mixture of PDMS (Polydimethylsiloxane, polydimethylsiloxane) and the corresponding curing agent in accordance with the mass ratio of 1 to 10: 1.

PUM

Property	Measurement	Unit
Length	1.0 ~ 1.5	mm
Width	0.2 ~ 0.3	mm
Height	0.02 ~ 0.1	mm

Description & Claims & Application Information

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Simple structure
easy to make

Method for detecting electric field effect of quantum dots

AI-Extracted Technical Summary

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Abstract

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Description & Claims & Application Information

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