Perovskite solar cell with ammonium thiocyanate as intermediate layer and preparation method
A solar cell, ammonium thiocyanate technology, applied in the field of solar cells, can solve the problems of affecting the contact of the light-absorbing layer of the perovskite structure, poor film quality, and many surface hydroxyl groups, so as to promote carrier transport and reduce the formation of NiOOH. , good photoelectric performance and stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0039] The preparation method of above-mentioned perovskite solar cell comprises the following steps:
[0040] 1), prepare NiO with a thickness of 5-100nm on the transparent conductive substrate 1 x hole transport layer 2;
[0041] 2), after fully drying, in NiO x Coating (spin-coating) NH on the hole transport layer 2 4 SCN solution, after drying at 80-150°C for 1-30min, an ultra-thin NH with a thickness of 2-20nm is formed 4 SCN middle layer 3;
[0042] Among them, NH 4 The solvent used in the SCN solution is a volatile solvent, preferably ethanol, N-N dimethylformamide (DMF) or water.
[0043] NH 4 The concentration range of SCN solution is 0.05-20.00mg / mL.
[0044] 3), in NH 4 Coating a perovskite thin film on the SCN intermediate layer 3 to form a perovskite structure light-absorbing layer 4 with a thickness of 300-500nm, and then preparing an electron transport layer 5 on the perovskite structure light-absorbing layer 4;
[0045] 4) Evaporating an electrode on t...
Embodiment 1
[0050] A kind of ammonium thiocyanate (NH 4 SCN) is NiO x The preparation method of the perovskite solar cell of the perovskite structure light-absorbing layer intermediate layer comprises the following steps:
[0051] (1) NiO x Precursor solution: Add nickel acetylacetonate and potassium acetate to the mixed solution of ethanol and acetonitrile to obtain NiO x For the precursor solution, the volume ratio of ethanol to acetonitrile is 1:19, the total concentration of nickel and potassium is 0.02mol / L, and the molar ratio of Ni:K atom is 80:20.
[0052] NiO was sprayed with a 0.3 mm caliber air spray gun x The precursor solution was sprayed on the transparent conductive substrate 1, and annealed at 450°C for 30 minutes to obtain NiO x The hole transport layer 2 has a thickness of about 30nm.
[0053] (2) A small amount of NH with a concentration of 0.20 mg / L 4 SCN ethanol solution was spin-coated on NiO at a speed of 5000rpm x On the hole transport layer 2, the spin-coat...
Embodiment 2
[0060] A kind of ammonium thiocyanate (NH 4 SCN) is NiO x The preparation method of the perovskite solar cell of the perovskite structure light-absorbing layer intermediate layer comprises the following steps:
[0061] (1) NiO x Precursor solution: Add nickel acetylacetonate, copper acetate monohydrate, lithium acetate and magnesium acetate tetrahydrate to the mixed solution of ethanol and acetonitrile to obtain NiO x For the precursor solution, the volume ratio of ethanol to acetonitrile is 1:19, the total concentration of nickel, copper, lithium and magnesium is 0.02mol / L, and the atomic molar ratio of Ni:Cu:Li:Mg is 75:10:10:5.
[0062] NiO was sprayed with a 0.3mm caliber spray gun x The precursor solution was sprayed on the transparent conductive substrate 1, and annealed at 500°C for 30 minutes to obtain NiO x The hole transport layer 2 has a thickness of 28nm. .
[0063] (2) A small amount of NH with a concentration of 0.50mg / L 4 SCN ethanol solution was spin-coa...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com