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Preparation method of in-situ porous antireflection film and preparation method of organic light-emitting diode

A technology of light-emitting diodes and anti-reflection coatings, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. Flexible and controllable effect in size range

Pending Publication Date: 2022-03-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The mastering process is relatively cumbersome and the demoulding process may destroy the porous structure, so these porous membrane preparation methods have certain limitations, which has become a technical problem that needs to be solved urgently

Method used

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  • Preparation method of in-situ porous antireflection film and preparation method of organic light-emitting diode
  • Preparation method of in-situ porous antireflection film and preparation method of organic light-emitting diode
  • Preparation method of in-situ porous antireflection film and preparation method of organic light-emitting diode

Examples

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Effect test

Embodiment 1

[0053] In this example, see figure 1 , a method for preparing an in-situ porous antireflection film and an organic light emitting diode, comprising the steps of:

[0054] Step 100: cleaning the ITO / glass substrate, drying with nitrogen gas for later use; weighing polymer PS of different masses, adding organic solvent chloroform to mix, stirring and dissolving by magnetic force to obtain polymer solutions with different mass ratios of 0.5wt% to 3wt%;

[0055] Step 101: configure a saturated sodium chloride solution to form a relative humidity of 75%, and after reaching a stability, add the PS solution in the step 100 dropwise on the surface of the non-conductive side of the conductive substrate after cleaning, and let it stand for 60 seconds, and the solvent will naturally volatilize; Annealed and dried to prepare a porous anti-reflection film;

[0056] Step 102: After cleaning the dried porous membrane / ITO glass substrate in step 101 with lotion, acetone, deionized water and ...

Embodiment 2

[0062] This embodiment is basically the same as Embodiment 1, and the special features are:

[0063] In this embodiment, a method for preparing an in-situ porous anti-reflection film and an organic light-emitting diode includes the following steps:

[0064] Step 100: cleaning the ITO / glass substrate and drying it with nitrogen gas for later use. A certain mass of polymer PS was weighed, mixed with an appropriate amount of organic solvent chloroform, and dissolved by magnetic stirring to obtain a polymer PS solution with a mass ratio of 1.0 wt%.

[0065] Step 101: Configure different saturated salt solutions to form relative humidity of 65%, 75%, 85%, and 95%, and after reaching stability, add the PS solution in step 100 dropwise on the non-conductive side surface of the conductive substrate after cleaning , standing for 60s, the solvent evaporates naturally; annealing and drying can prepare a porous anti-reflection film.

[0066] Steps 102-104: this step is the same as that ...

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Abstract

The invention discloses a preparation method of an in-situ porous antireflection film and an organic light-emitting diode, and a porous polymer film with uniform distribution and uniform aperture is prepared by taking water drops condensed on the surface of a polymer solution as a template and water drop self-assembly as driving force. And forming a film on the non-conductive side of the conductive substrate in situ to serve as an antireflection film of the organic light-emitting diode. According to the invention, the OLED antireflection film is formed in situ by using a respiration diagram method, the scale is uniform, the emergent light of red, green and blue OLEDs is softer, and the visual brightness is enhanced. By regulating and controlling the static relative humidity, the solution dispensing amount, the solution concentration and the like, the porous size and periodic arrangement on the antireflection film are simple and adjustable, and the size range is more elastic and controllable. The OLED antireflection film preparation method provided by the invention has the characteristics of in-situ film formation without transfer, simple process, low cost, rapidness, large-area processing and the like, and is suitable for various monochromatic light or white light OLED devices with different areas, rigidity and flexibility.

Description

technical field [0001] The invention relates to the technical fields of nano-processing and light-emitting diode preparation, in particular to a preparation method of an in-situ porous anti-reflection film and an organic light-emitting diode. Background technique [0002] Organic light-emitting diodes (organic light-emitting diodes, OLEDs) have shown great application potential in the fields of full-color flat panel displays and solid-state lighting due to their advantages such as self-illumination, wide viewing angle, rich colors, and low-voltage DC drive. Although the internal quantum efficiency of OLED is almost 100%, due to the light loss caused by waveguide mode, substrate mode and plasmon mode, the external quantum efficiency is much lower than the internal quantum efficiency, so enhancing the light extraction of OLED can effectively improve the practical efficiency of the device. Light extraction efficiency, improve practical value. Methods to improve OLED light extr...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/858H10K71/00
Inventor 郑燕琼陈俊聪陈与欢陈维安李维光
Owner SHANGHAI UNIV
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