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Upconversion device based on near-infrared photoelectric detector and OLED and preparation method thereof

A near-infrared light and electric detector technology, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of inability to detect near-infrared light, achieve the effect of increasing the response rate and improving the performance of infrared detection

Pending Publication Date: 2022-03-22
SUZHOU UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

But its disadvantage is that the current small organic molecules and polymers cannot detect near-infrared light with a wavelength greater than 1 micron.

Method used

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  • Upconversion device based on near-infrared photoelectric detector and OLED and preparation method thereof
  • Upconversion device based on near-infrared photoelectric detector and OLED and preparation method thereof
  • Upconversion device based on near-infrared photoelectric detector and OLED and preparation method thereof

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preparation example Construction

[0045] The present invention also provides the preparation method of the up-conversion device based on near-infrared photodetector and OLED, comprising the following steps:

[0046] S1. Provide a p-InAlAs / i-InGaAs / n-InAlAs epitaxial wafer;

[0047] S2. Perform photolithography on the p-InAlAs / i-InGaAs / n-InAlAs epitaxial wafer, and immerse the photoetched epitaxial wafer in an etching solution for etching;

[0048] S3. forming a silicon nitride insulating layer on the etched epitaxial wafer;

[0049] S4. Depositing a bottom electrode on the back side of the InP substrate by magnetron sputtering;

[0050] S5. Perform secondary photolithography on the epitaxial wafer, and etch the epitaxial wafer after the secondary photolithography to form a stepped structure to obtain a PIN-type p-InAlAs / i-InGaAs / n-InAlAs device;

[0051] S6. Growing an OLED device on the obtained p-InAlAs / i-InGaAs / n-InAlAs device to obtain the up-conversion device based on near-infrared photodetector and OLE...

Embodiment 1

[0058] See figure 1 , this embodiment provides a p-InAlAs / i-InGaAs / n-InAlAs near-infrared photodetector structure, the layers of which are: n-type In 0.52 Al 0.48 As bottom electrode contact layer with a thickness of 500nm and a doping concentration of 1×10 18 cm -3 ; 0.53 Ga 0.47 As absorption layer with a thickness of 2000nm; p-type In 0.52 Al 0.48 As contact layer with a thickness of 300nm and a doping concentration of 1×10 18 cm -3 .

[0059] image 3 Be the device of embodiment 1 at 15mW / cm 2 I-V curves under incident light power.

[0060] It can be seen from the figure that the dark current of the device is very small, which is 4.04×10 at 0.5V bias -6 A / cm 2 ; When the applied power is 15mW / cm 2 , the photocurrent density is 1.35×10 -2 A / cm 2 , the responsivity reaches 0.9A / W. Compared with similar devices, the dark current is reduced by an order of magnitude, and the responsivity is increased by about 0.4A / W.

Embodiment 2

[0062] See figure 2 , this embodiment provides an up-conversion device based on a near-infrared photodetector and an OLED, which is obtained based on the OLED device grown on p-InAlAs / i-InGaAs / n-InAlAs in Embodiment 1. Among them, in the OLED device, the thickness of the NPB layer is 50nm, and the thickness of the TCTA layer is 20nm; CBP / Ir(ppy) 3 The thickness of the composite doped layer is 30nm, Ir(ppy) 3 The doping ratio is 8%; the thickness of the TPBi layer is 40nm.

[0063] Figure 4 It is the effect diagram of p-InAlAs / i-InGaAs / n-InAlAs detector and OLED integrated up-conversion device when the device emits light under the irradiation of 1550nm infrared light.

[0064] It can be seen from the figure that with 1550nm infrared light as the incident light, a very good green luminous effect can be seen. Therefore, the up-conversion device successfully converts 1550nm infrared light into visible green light around 520nm. Compared with the existing devices, the up-conv...

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Abstract

The invention discloses a p-InAlAs / i-InGaAs / n-InAlAs near-infrared photoelectric detector, which is characterized by comprising an InP substrate, an n-type InAlAs bottom electrode contact layer positioned on the InP substrate, an i-type InGaAs absorption layer positioned on the bottom electrode contact layer, a p-type InAlAs contact layer positioned on the absorption layer and a silicon nitride insulating layer. The invention further discloses an up-conversion device based on the near-infrared photoelectric detector and the OLED, the up-conversion device comprises the p-InAlAs / i-InGaAs / n-InAlAs near-infrared photoelectric detector and the OLED device formed on the p-type InAlAs contact layer, and a bottom electrode is arranged on the back face of the InP substrate. According to the up-conversion device based on the near-infrared photoelectric detector and the OLED, the response rate of the near-infrared photoelectric detector is improved, meanwhile, the integration problem of the InAlAs material and the OLED structure is solved, and the infrared light-visible light conversion function is achieved.

Description

technical field [0001] The invention relates to the technical field of near-infrared photodetection, in particular to an up-conversion device based on a near-infrared photodetector and an OLED and a preparation method thereof. Background technique [0002] The short-wave infrared band is less absorbed by water molecules in the air, and the transmittance reaches 90%. It is called the "infrared atmospheric window". Therefore, short-wave infrared detection and imaging have very important applications in both military and civilian fields. However, common CCD and CMOS sensor devices cannot detect infrared bands larger than 1 micron, so III-V compound semiconductors with smaller bandgap widths are generally used to detect infrared rays. InGaAs and InAlAs materials are direct bandgap semiconductors with high electron mobility and lattice matching with InP, so high-quality epitaxial wafers can be obtained. The formed PIN-type InGaAs / InP and InGaAs / InAlAs infrared photodetectors hav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/105H01L31/18H01L51/50H01L51/56H01L27/28
CPCH01L31/105H01L31/1844H01L31/03529H01L31/03042H01L31/03046H10K19/20H10K50/12H10K71/00Y02P70/50
Inventor 陈俊张军喜
Owner SUZHOU UNIV
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