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TBC back contact solar cell and preparation method thereof

A solar cell and back contact technology, applied in the field of solar cells, can solve problems such as positioning problems and lower product yield, and achieve the effects of reducing metal recombination, reducing metal puncture, increasing current density and open circuit voltage

Pending Publication Date: 2022-03-29
HANWHA SOLARONE QIDONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation method needs to use a mask, which has positioning problems and reduces the yield of products.

Method used

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  • TBC back contact solar cell and preparation method thereof
  • TBC back contact solar cell and preparation method thereof
  • TBC back contact solar cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0030] Embodiment 1N-TBC back contact solar cell

[0031] Such as Figure 1-10 As shown, the N-TBC back contact solar cell in this embodiment includes an N-type silicon wafer 1, a passivation anti-reflection layer deposited on the front side of the N-type silicon wafer 1, and a first tunnel arranged on the back side of the N-type silicon wafer 1. Through oxide layer 3, p+ doped layer 4, second tunnel oxide layer 8, first silicon nitride layer 6, n+ doped layer 10, second silicon nitride layer 11, silver electrode 13 and embedded part of N-type silicon The third tunnel oxide layer 9 on the back of the chip 1.

[0032] Wherein, the resistivity of the N-type silicon wafer 1 is 0.5-15Ω·cm, and the thickness is 50-300um. All tunnel oxides are made of SiO 2 , the thickness is 1~3nm, SiO 2 The growth method is high temperature thermal oxygen method, nitric acid oxidation method, ozone oxidation method or CVD deposition method; heavily doped p+poly Si (p+ doped layer 4) and n+poly...

Embodiment 2

[0040] The preparation method of embodiment 2N-TBC back contact solar cell

[0041] This embodiment provides a kind of preparation method based on the N-TBC back contact solar cell in embodiment 1, specifically comprises the following steps:

[0042] (1), the N-type silicon wafer 1 is sequentially subjected to damage removal, texturing, cleaning, and back polishing

[0043] Select the N-type silicon substrate, remove the mechanical damage layer and oil stain with alkaline solution, and then perform conventional texturing cleaning; then perform hot alkali polishing on the back surface of the N-type silicon, such as figure 1 shown.

[0044] The N-type crystalline silicon substrate selected in this embodiment has a resistivity of 6Ω·cm and a thickness of 180um.

[0045] (2), prepare the first tunnel oxide layer 3 and the p+ doped layer 4

[0046] Such as figure 2 As shown, on the back side of the N-type crystalline silicon substrate treated in step (1), grow the first tunnel...

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Abstract

The invention discloses a preparation method of a TBC back contact solar cell, and the method comprises the following steps: growing a first tunneling oxide layer and a p + doping layer on the back surface of a silicon wafer after texturing cleaning and polishing, then carrying out the first laser film opening and cleaning on the first tunneling oxide layer and the p + doping layer, and depositing a first silicon nitride layer; performing second laser film opening and cleaning on the first silicon nitride layer, growing a second tunneling oxide layer and an n + doping layer, depositing a second silicon nitride layer, and cleaning the second silicon nitride layer; depositing a passivation anti-reflection film on the front surface of the silicon wafer; and performing third laser film opening and cleaning on the n + doping layer and the second silicon nitride layer, and printing a back electrode on the corresponding n + doping layer. According to the preparation method of the solar cell, the prepared cell can well improve the current density and open-circuit voltage of the cell; and the back surface adopts a passivation contact structure, so that metal puncture of silver can be well reduced, and metal recombination of the cell is reduced.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic module production and manufacturing, and in particular relates to a preparation method of a TBC back-contact solar cell and a solar cell prepared by the preparation method. Background technique [0002] Solar cells have become the choice of the new era because of their unique advantages. Solar cells, or photovoltaic cells, can directly convert solar energy into electrical energy, and its principle lies in the photovoltaic effect of semiconductor PN junctions. Low cost and high efficiency have been the continuous pursuit in the process of solar cell industrialization. Open circuit voltage, current density, and fill factor are key parameters for the efficiency of crystalline silicon cells. The conventional back-contact IBC structure battery has a high short-circuit current (>41mA / cm 2 ); passivated contact structure battery, good passivation effect and very low metal recombination, with h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/0224H01L31/068
CPCH01L31/1804H01L31/02167H01L31/022441H01L31/0682Y02E10/547Y02P70/50
Inventor 袁晓佳赵福祥费存勇
Owner HANWHA SOLARONE QIDONG