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Preparation method of plasma-induced growth high-crystallinity thin film electrode and thin film battery

A thin-film battery and thin-film electrode technology, which is applied in the field of new energy devices, can solve problems such as poor process compatibility of solid-state batteries, affecting the electrochemical performance of materials, and poor electrochemical performance of thin films, so as to improve low-temperature process compatibility and shorten processes and working hours. , the effect of improving performance

Pending Publication Date: 2022-04-12
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the preparation process of all-solid-state thin-film batteries is still the main factor affecting their electrochemical performance and growth efficiency, such as the typical LiCoO 2 / LiPON / Li all-solid-state thin-film battery system, LiCoO synthesized at room temperature 2 The film is an amorphous structure with extremely low crystallinity. This amorphous structure must undergo a subsequent high-temperature annealing process to form a layered structure with better crystallinity. However, the high-temperature annealing process will cause the following series of problems: 1) External high-temperature annealing The treatment will not only lead to the pollution of the film substrate, but also inevitably introduce a large internal stress into the film, causing a large number of micro-cracks and micro-short circuits to appear in the film, which will not be conducive to the transmission of lithium ions, making the film performance Poor electrochemical performance; 2) The annealing temperature in the high-temperature annealing process is generally above 600°C, which will melt other functional materials, such as photoresists, low-melting point metal coatings, etc., resulting in process compatibility of solid-state batteries Very poor; 3) It is inevitable to be exposed to CO in the air during the high temperature annealing process 2 , CO at high temperature 2 Carbonate insulators will be formed on the surface of the film, which will increase the interface resistance of the film and seriously affect the electrochemical performance of the material; 4) In the production process of the full battery, the electrolyte will grow continuously on the surface of the film after annealing, and the interface will be separated due to the stress mismatch. layer phenomenon

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  • Preparation method of plasma-induced growth high-crystallinity thin film electrode and thin film battery

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Embodiment Construction

[0029] Those skilled in the art will appreciate that the embodiments described here are to help readers understand the principles of the present invention, and it should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the essence of the present invention, and these modifications and combinations are still within the protection scope of the present invention.

[0030] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] A method for preparing plasma-induced growth of highly crystalline thin-film electrodes and thin-film batteries. The preparation method uses a vacuum physical vapor deposition thin-film method to prepare thin-film battery elect...

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Abstract

The invention discloses a preparation method of a plasma-induced growth high-crystallization thin film electrode and a thin film battery, and the preparation method comprises the following steps: preparing the thin film electrode and the thin film battery by adopting a vacuum physical vapor deposition method; directional plasma flow is applied in the whole process to bombard a thin-film material to promote high-crystallization growth of a collector layer, an electrode layer and an electrolyte layer of the thin-film battery. According to the preparation method, the problems of thin film substrate pollution, cracking, poor process compatibility and electrochemical performance and the like caused by thin film crystallization through a high-temperature annealing treatment process in the prior art are solved, the existing technical problems are broken through, the deposition temperature of a thin film electrode is remarkably reduced, and the low-temperature process compatibility of the battery is improved; working procedures and working hours of the thin-film battery are shortened, resources are saved, and cost is reduced; the solid / solid interface impedance of the battery is reduced, and the performance of the thin-film battery is improved. According to the preparation method disclosed by the invention, a high-crystallinity thin film electrode and a thin film battery with a pollution-free interface and uniform stress distribution can be prepared.

Description

technical field [0001] The invention belongs to the technical field of new energy devices, in particular to the field of solid-state batteries, and in particular to a method for preparing a plasma-induced growth highly crystalline thin-film electrode and a thin-film battery. Background technique [0002] In recent years, lithium-ion batteries with high energy and high power density have attracted much attention. Since lithium batteries are mostly liquid systems, and liquid systems have major safety hazards, the further development of lithium batteries has been hindered for a long time, and the safety of liquid system batteries has been solved. The most feasible way is to solid-state and thin-film the battery. Thin-film solid-state batteries have the advantages of high safety factor, environmental friendliness, strong plasticity, adjustable thickness, and batch preparation by physical methods. Its high energy density and flexible structure design are widely used in military, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/139H01M10/052H01M10/0562H01M10/058C23C14/02C23C14/06C23C14/08C23C14/14C23C14/24C23C14/28C23C14/30C23C14/34C23C14/35C23C14/46
CPCY02E60/10Y02P70/50
Inventor 赵宇崔艳华陈勇高晨阳张小强王超崔益秀
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS