High-bandwidth SIW circularly polarized filtering antenna
A filter antenna and circular polarization technology, which is applied in the field of satellite wireless communication, can solve the problems of narrow axial ratio bandwidth and gain bandwidth, which are unfavorable for wide application, and achieve wide gain bandwidth and axial ratio bandwidth, and solve the effect of narrow bandwidth
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Embodiment 1
[0043] See figure 1 , figure 1 It is a schematic structural diagram of a high-bandwidth SIW circularly polarized filter antenna provided by an embodiment of the present invention, which includes: a first metal layer 1, a first dielectric layer 2, a second metal layer 3, and a second dielectric layer from bottom to top layer 4, the third metal layer 5, the third dielectric layer 6 and the fourth dielectric layer 7; wherein,
[0044] A coplanar waveguide structure 101 is disposed on the first metal layer 1;
[0045] The first dielectric layer 2 is provided with a plurality of first through holes 201, and the plurality of first through holes 201 are uniformly arranged to form a first SIW resonant cavity 203 with an input window 202; In the direction of the plane where the metal layer 1 is located, the orthographic projection of the input window 202 overlaps with the orthographic projection of the coplanar waveguide structure 101;
[0046] Several radiation windows 301 are prov...
Embodiment 2
[0076] Next, three-dimensional modeling and performance simulation of the circularly polarized filter antenna provided by the present invention are performed through simulation software to verify the beneficial effect of the high-bandwidth SIW circularly polarized filter antenna provided by the present invention.
[0077] 2.1 Test platform:
[0078] The simulation test is carried out with the three-dimensional electromagnetic full-wave simulation software HFSS_18.0.
[0079] 2.2 Simulation content
[0080] The resonant frequency of the first microstrip patch 502 used in this simulation test is 13.5 GHz, and the main mode is used as the working mode. The second dielectric layer 4 is made of duroid 5880 Rogers material with a thickness of 1.524 mm. The diameter of the second through hole 401 is The central angle between two adjacent second through holes 401 is 15 degrees.
[0081] The second SIW resonant cavity 402 is a circular SIW cavity with a center frequency f r The calc...
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