Epitaxial structure for multi-wavelength edge-emitting semiconductor laser

Abstract

The invention provides an epitaxial structure for a multi-wavelength edge-emitting semiconductor laser. The epitaxial structure mainly solves the problems that an existing multi-wavelength laser is complex in light path and structure and high in cost. The epitaxial structure comprises an N-type substrate, a quantum well unit of which the emergent wavelength is lambda1, a first trap tunnel junction, a quantum well unit of which the emergent wavelength is lambda2, a second trap tunnel junction, a quantum well unit of which the emergent wavelength is lambda3 and a P-type contact layer which are sequentially arranged from bottom to top, the first trap tunnel junction is used for modulating a light field lased by the quantum well unit with the emergent wavelength of lambda1 and the quantum well unit with the emergent wavelength of lambda2; the second trap tunnel junction is used for modulating a light field lased by the quantum well unit with the emergent wavelength of lambda2 and the quantum well unit with the emergent wavelength of lambda3; each of the first trap tunnel junction and the second trap tunnel junction comprises a P-type trap layer, a P-type heavily doped layer, an N-type heavily doped layer and an N-type trap layer which are sequentially arranged from bottom to top.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, and in particular relates to an epitaxial structure used for multi-wavelength edge-emitting semiconductor lasers. Background technique [0002] With the development of laser technology, lasers have been fully applied in various fields. Especially semiconductor lasers, due to their small size, high efficiency, easy integration and maintenance-free characteristics, have been widely used in material processing, medical beauty, laser radar and aerospace and other fields. However, in many applications and researches, such as laser confocal scanning microscope, confocal Raman microscope, flow cytometry and optogenetics, single-wavelength lasers can no longer meet the needs, and multi-wavelength lasers are needed. [0003] Conventional semiconductor lasers have a single wavelength. If lasers with multiple wavelengths are required in an application, chips with different wavelengths need to be package...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of complex optical path, complex structure and high cost of existing multi-wavelength lasers, and to provide an epitaxial structure for multi-wavelength edge-emitting semiconductor lasers

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