Back film structure capable of simultaneously improving back surface efficiency and front surface efficiency of double-sided PERC and preparation method and application of back film structure
A back film and backside technology, applied in the field of solar cells, can solve problems such as increasing the complexity of the preparation process, and achieve the effects of excellent hydrogen passivation, front conversion efficiency improvement, and efficiency improvement.
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Embodiment 1
[0042] In this embodiment, a back film structure is provided. The back film structure includes an aluminum oxide (AlO) film on the back of the cell, a silicon nitride (SiN) film is provided on the aluminum oxide film, and a silicon nitride (SiN) film is placed on the silicon nitride film. A silicon oxynitride (SiON) film is provided on the film.
[0043] Its preparation method comprises the following steps:
[0044] A. Put the back of the battery sheet up, put it into the graphite plate, then put the graphite plate into the ALD plate cavity, coat a layer of AlO film 1 on the back of the battery, and coat it 10 times. The thickness of the AlO film 1 is 8~ 10nm, the refractive index is 1.56;
[0045] B. Put the back side of the cell obtained in step A into the graphite boat, then put the graphite boat into the tubular PECVD, pass ammonia and silane at a flow ratio of 6:1, and place it on the AlO film 1 To prepare SiN film 2, in this step, 6000 sccm of ammonia gas, 1000 sccm of...
Embodiment 2
[0049] In this embodiment, a back film structure is provided. The back film structure includes an aluminum oxide (AlO) film on the back of the cell, a silicon nitride (SiN) film is provided on the aluminum oxide film, and a silicon nitride (SiN) film is placed on the silicon nitride film. A silicon oxynitride (SiON) film is provided on the film.
[0050] Its preparation method comprises the following steps:
[0051] A. Put the back of the battery sheet up, put it into the graphite plate, then put the graphite plate into the ALD plate cavity, coat a layer of AlO film 1 on the back of the battery, and plate 13 times. The thickness of the AlO film 1 is 10~ 12nm, the refractive index is 1.60;
[0052] B. Put the back of the cell obtained in step A upwards into the graphite boat, then put the graphite boat into the tubular PECVD, pass ammonia and silane at a flow ratio of 4.5:1, and place it on the AlO film 1 To prepare SiN film 2, in this step, 6300 sccm of ammonia gas, 1400 scc...
Embodiment 3
[0056] In this embodiment, a back film structure is provided. The back film structure includes an aluminum oxide (AlO) film on the back of the cell, a silicon nitride (SiN) film is provided on the aluminum oxide film, and a silicon nitride (SiN) film is placed on the silicon nitride film. A silicon oxynitride (SiON) film is provided on the film.
[0057] Its preparation method comprises the following steps:
[0058] A. Put the back of the battery sheet up, put it into the graphite plate, then put the graphite plate into the ALD plate cavity, coat a layer of AlO film 1 on the back of the battery, and coat it 15 times. The thickness of the AlO film 1 is 12~ 15nm, the refractive index is 1.63;
[0059] B. Put the back of the cell obtained in step A upwards into the graphite boat, then put the graphite boat into the tubular PECVD, pass ammonia and silane at a flow ratio of 4:1, and place it on the AlO film 1 To prepare SiN film 2, in this step, 6000 sccm of ammonia gas, 1500 scc...
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Abstract
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