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Method and device for plasma-assisted preparation of high-conductivity graphene metal composite material

A composite material and graphene technology, applied in graphene, metal rolling, metal rolling, etc., can solve the problems of limited copper electrochemical performance improvement, limited copper application range, poor heat resistance, etc., to avoid Adverse effects, energy consumption reduction, and productivity improvement effects

Pending Publication Date: 2022-05-13
CHONGQING GRAPHENE TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the copper substrate has the following defects: low strength and poor heat resistance, which greatly limit the application range of copper
[0007] However, using pure copper as the base material and using existing devices to produce graphene-copper-based composite materials (such as graphene-copper-based composite plates), the number of layers of graphene in the prepared composite material is a single layer, and the electrochemical performance of copper Limited performance improvement

Method used

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  • Method and device for plasma-assisted preparation of high-conductivity graphene metal composite material
  • Method and device for plasma-assisted preparation of high-conductivity graphene metal composite material
  • Method and device for plasma-assisted preparation of high-conductivity graphene metal composite material

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Experimental program
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Effect test

Embodiment 1

[0060] Such as figure 1 The device for preparing the graphene-metal layered composite material assisted by the plasma includes:

[0061] The sample inlet chamber 1, the plasma-assisted decomposition chamber 2, the thermocompression chamber 3 and the sample outlet chamber 4 connected in sequence are used for feeding the sample inlet chamber 1, the plasma-assisted decomposition chamber 2, the thermocompression chamber 3 and the outlet chamber. The growth carbon source gas path mechanism 8 of the gaseous growth carbon source connected to the sample chamber 4 is used to feed the auxiliary gas into the sample chamber 1, the plasma-assisted decomposition chamber 2, the hot-press chamber 3 and the sample outlet chamber 4. The gas circuit mechanism 7 and the vacuum mechanism 6 for pumping the pressure in the sample injection chamber 1, the plasma-assisted decomposition chamber 2, the hot-press chamber 3 and the sample discharge chamber 4 to a low vacuum state;

[0062] The sampling c...

Embodiment 2

[0074] Adopt the device of embodiment 1 to prepare graphene copper-based layered composite material, concrete steps are as follows:

[0075] 10 pieces of copper foil with a thickness of 25 μm are discharged through the feeding roller 11, and the copper foil is fed to the heat-pressing mechanism through the guide roller 23 and the pre-pressing roller 32 sequentially under the pulling action of the discharging mechanism 41, so that the multi-channel The copper foil is in a connected state from the feed roller 11 to the discharge mechanism 41;

[0076] The sample inlet chamber 1, the plasma-assisted decomposition chamber 2, the hot-press chamber 3 and the sample outlet chamber 4 are vacuumized by the vacuum mechanism 6, and the degree of vacuum is 0.1 Pa. During the vacuum process, the vacuum mechanism 14 will inject the sample The gas in the chamber 1, the plasma-assisted decomposition chamber 2, the hot-press chamber 3 and the sample outlet chamber 4 is extracted and discharged...

Embodiment 3

[0085] The difference between this embodiment and Embodiment 2 is that: the hot pressing mechanism adopts a rolling mill 34, the rolling temperature is 900° C., the pressure is 45 MPa, and the rolling time is 20 minutes.

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Abstract

The invention belongs to the technical field of graphene preparation, and particularly relates to a method and device for plasma-assisted preparation of a high-conductivity graphene metal composite material. The method comprises the steps that graphene grows on a plurality of metal base materials under the plasma condition, then hot-press forming is conducted, and graphene growth and hot-press forming are completed in communicated cavities. The device comprises: a plasma-assisted decomposition chamber which is communicated with a sample introduction chamber and a hot pressing chamber and is located between the sample introduction chamber and the hot pressing chamber; the sample introduction chamber is provided with a sample introduction mechanism, the plasma auxiliary decomposition chamber is provided with a plasma generator and a first heating mechanism, and the hot pressing chamber is provided with a pre-pressing roller, a hot pressing mechanism and a second heating mechanism; and a gas path mechanism. According to the invention, the plasma generator can accelerate carbon source cracking, catalyze carbon source cracking, promote graphene multilayer nucleation and growth, and increase the number of graphene growth layers.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and in particular relates to a method and a device for plasma-assisted preparation of highly conductive graphene-metal composite materials. Background technique [0002] With the rapid development of electronic technology, computer and information technology, electronic components are changing in the direction of high integration, high integrated circuit, high density packaging, etc., not only require materials to have good electrical conductivity, thermal conductivity, elastic limit, toughness , It also requires the material to have good wear resistance, good formability, electroplating and packaging performance. Copper, as the most widely used non-ferrous metal except aluminum, has excellent electrical and thermal conductivity, and is widely used in electrical appliances, electronics and other fields. [0003] However, the copper substrate has the following defects: low strength a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B21B1/40B30B3/04B21B45/00B21B15/00C01B32/186B21B3/00
CPCB21B1/40B30B3/04B21B45/004B21B15/00C01B32/186B21B3/00B21B2015/0057B21B2003/005
Inventor 史浩飞黄德萍段银武李占成张永娜李昕邵丽
Owner CHONGQING GRAPHENE TECH
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