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Gallium oxide single crystal growth shouldering angle control method and control device

A control method, gallium oxide technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of inability to guarantee the repeatability of single crystal growth, decrease in consistency, etc., to achieve lower requirements and experience dependence, and finished products The effect of improving efficiency and ensuring consistency

Active Publication Date: 2022-05-17
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this experience-dependent growth method leads to the diversity of crystal shoulder angles, which cannot guarantee the repeatability of single crystal growth. Especially when the characteristics of the growth and heat preservation system change, the consistency of the product will be further reduced.

Method used

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  • Gallium oxide single crystal growth shouldering angle control method and control device
  • Gallium oxide single crystal growth shouldering angle control method and control device
  • Gallium oxide single crystal growth shouldering angle control method and control device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Example 1: Growth rate v=20mm / h, sampling period T=3 minutes, so the growth height of one sampling period is h 1 = h 2 =0.1cm, initial shoulder angle θ 1 =30º, tanθ 1 = tan30º=0.57.

[0079] Step 1: Put the gallium oxide raw material into the crucible 15, place the mold guiding device 14 on the upper edge of the crucible 15, fix the seed crystal 8 on the seed crystal rod 7, align the lower end of the seed crystal 8 with the gap of the mold guiding device 14, And communicate with the raw material in the crucible 15 through the gap, place or install the seed rod, the crucible, the heating element, and the heat preservation structure in place; The eddy current is generated on the crucible, and the heat generated by the heating element 13 gradually melts all the raw materials in the crucible 15, and then waits for seeding;

[0080] Step 2: In the control system 10 in front of the furnace body, pre-set the shoulder angle θ of the crystal 9 1 =30º, growth rate v=20mm / h, ...

Embodiment 2

[0100] Example 2: Growth rate v=5mm / h, sampling period T=6 minutes, so the growth height of one sampling period is h 1 = h 2 =0.05cm, initial shoulder angle θ 1 =15º, tanθ 1 = tan15º=0.26.

[0101] The 1st step: the charging operation process is identical with the 1st step among the embodiment one;

[0102] Step 2: In the control system 10 in front of the furnace body, preset the shoulder angle θ of the crystal 9 1 =15º, growth rate v=5mm / h, sampling period T=6 minutes;

[0103] The 3rd step: the seeding and start pulling operations are the same as the 3rd step in the embodiment one;

[0104] Step 4: The process from the weighing device 6 monitoring the crystal quality to transmitting the data to the control system 10 is the same as the first embodiment. The crystal growth mass m in the last sampling period that can be obtained from the weighing device 1 = 0.16 g, the crystal growth mass m in this sampling period 2 = 0.17 g, according to Figure 6 The equivalent calcu...

Embodiment 3

[0122] Embodiment 3: Growth rate v=10mm / h, sampling period T=12 minutes, so the growth height of one sampling period is h 1 = h 2 =0.2cm, initial shoulder angle θ 1 =45º, tanθ 1 = tan45º=1.

[0123] The 1st step: the charging operation process is identical with the 1st step among the embodiment one;

[0124] Step 2: In the control system 10 in front of the furnace body, preset the shoulder angle θ of the crystal 9 1 =45º, growth rate v=10mm / h, sampling period T=12 minutes;

[0125] The 3rd step: the seeding and start pulling operations are the same as the 3rd step in the embodiment one;

[0126] Step 4: the process from weighing device 6 monitoring crystal quality to transmitting data to control system 10 is the same as embodiment one; the crystal growth quality m in the last sampling period that can be obtained from weighing device 1 = 2.36 g, the crystal growth mass m in this sampling period 2 = 2.92 g, according to Figure 6 The equivalent calculation in , consider ...

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Abstract

The invention relates to a gallium oxide single crystal growth shouldering angle control method which is completed through a control device, the shouldering angle in a sampling period is calculated by adopting data such as increment of crystal mass and pulling speed in the sampling period obtained by a weighing device, and the control method belongs to local shouldering angle adjustment in the sampling period. In addition, the shouldering angle is calculated through the crystal height and the bottom edge length obtained by the image acquisition device, and the method belongs to the overall shouldering angle adjustment of the grown crystal. And finally, averaging the adjusting speeds obtained by the two methods, and setting the average value to the growth speed of the next sampling period. After the method is applied, continuous and stable shouldering can be carried out in the shouldering process of the gallium oxide single crystal according to a preset angle until equal-diameter growth is realized, the yield of the full single crystal is improved, and the gallium oxide crystal with smooth and continuous shouldering is obtained.

Description

technical field [0001] The invention designs a method and a control device for controlling the shoulder angle of gallium oxide single crystal growth, and belongs to the field of semiconductor material growth. Background technique [0002] β-Ga 2 o 3 As the third generation of wide bandgap oxide semiconductor materials, it has attracted widespread attention. β-Ga 2 o 3 The forbidden band width is about 4.9 eV, which is generally higher than the first-generation elemental semiconductor materials represented by silicon and germanium, and the second-generation compound semiconductor materials represented by gallium arsenide (GaAs) and indium phosphide (InP). . β-Ga 2 o 3 The larger band gap makes it have the characteristics of high breakdown voltage, high saturation electron drift rate, large thermal conductivity and stable chemical properties, so β-Ga 2 o 3 It has broad application prospects in electronic devices, such as light-emitting diodes (LEDs), field-effect tran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/28C30B15/26C30B29/16C30B15/34
CPCC30B15/28C30B15/26C30B29/16C30B15/34Y02P70/50
Inventor 于凯霍晓青王英民高飞张胜男王健李宝珠程红娟王新月
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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