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A kind of gas sensor, manufacturing method and gas detection method

A technology of gas sensor and manufacturing method, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of limiting the application range and application prospect of gas sensors, low response time and sensitivity of sensors, etc., and achieve shortened response time and rapid adsorption of gas Effect

Active Publication Date: 2022-07-12
北京中科海芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the response time and sensitivity of sensors with graphene / metal oxide composite structures are low at this stage, which greatly limits the application range and application prospects of gas sensors.

Method used

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  • A kind of gas sensor, manufacturing method and gas detection method
  • A kind of gas sensor, manufacturing method and gas detection method
  • A kind of gas sensor, manufacturing method and gas detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] The manufacturing method of the gas sensor provided by the embodiment of the present invention includes: firstly, forming a silicon dioxide layer with a thickness of 100 nm on a silicon substrate; secondly, using a chemical vapor deposition method to form a graphene layer with a thickness of 0.34 nm on a copper substrate, and using The wet transfer method is transferred to the silicon dioxide layer, and then an inductively coupled oxygen plasma dry etching process is used to form a patterned graphene layer on the silicon dioxide layer to obtain two contact holes. Next, an electrode is formed in each contact hole, and the material of the adhesion layer is titanium with a thickness of 1 nm, and the material of the conductive layer is gold with a thickness of 50 nm. Finally, titanium dioxide nanoparticles were formed on the graphene layer by a spin coating process, where the spin coating speed was 300 r / min and the concentration of the spin coating solution was 15 g / mL.

Embodiment 2

[0064] The manufacturing method of the gas sensor provided by the embodiment of the present invention includes: firstly, forming a silicon dioxide layer with a thickness of 120 nm on a silicon substrate; secondly, using a chemical vapor deposition method to form a molybdenum disulfide layer with a thickness of 10 nm on a copper substrate; The method of etching the substrate transfers the molybdenum disulfide to the silicon dioxide layer, and then adopts the inductively coupled oxygen plasma dry etching process to form a patterned molybdenum disulfide layer on the silicon dioxide layer to obtain two contact holes . Next, an electrode is formed in each contact hole, and the material of the adhesive layer is tungsten with a thickness of 5 nm, and the material of the conductive layer is silver with a thickness of 70 nm. Finally, TiO2 nanoparticles were formed on the graphene layer by a spin-coating process, where the spin-coating speed was 700 r / min and the concentration of the sp...

Embodiment 3

[0066]The manufacturing method of the gas sensor provided by the embodiment of the present invention includes: firstly, forming a silicon dioxide layer with a thickness of 210 nm on a silicon substrate; secondly, using a chemical vapor deposition method to form a molybdenum disulfide layer with a thickness of 15 nm on a copper substrate; The method of etching the substrate transfers the molybdenum disulfide to the silicon dioxide layer, and then adopts the inductively coupled oxygen plasma dry etching process to form a patterned molybdenum disulfide layer on the silicon dioxide layer to obtain two contact holes . Next, an electrode is formed in each contact hole, the adhesion layer of which is 8 nm thick chromium, and the conductive layer material is 120 nm thick copper. Finally, TiO2 nanoparticles were formed on the graphene layer by a spin-coating process, where the spin-coating speed was 1100 r / min and the concentration of the spin-coating solution was 5 g / mL.

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Abstract

The invention discloses a gas sensor, a manufacturing method and a gas detection method, and relates to the technical field of gas detection, so as to solve the problems of low response time and low sensitivity of the current graphene / metal oxide composite structure sensor. The gas sensor includes: a substrate, a two-dimensional semiconductor layer formed on the substrate, a metal oxide semiconductor layer formed on the surface of the two-dimensional semiconductor layer, and two electrodes. The manufacturing method is used to manufacture a gas sensor. The gas sensor, the manufacturing method and the gas detection method provided by the present invention are used for environmental monitoring.

Description

technical field [0001] The invention relates to the technical field of gas detection, in particular to a gas sensor, a manufacturing method and a gas detection method. Background technique [0002] A gas sensor is a sensor that detects the content of one or several types of gases in the environment, and can be widely used in environmental monitoring. The gas sensor is usually a gas sensitive material part as the core of detection, which has a strong adsorption effect with some or several gas molecules in the air, thereby changing the electrical properties of the material, and finally obtaining the ambient gas by reading the electrical signal. Information. [0003] At this stage, there are many gas sensors based on graphene and metal oxide composite structures. Graphene is a two-dimensional material with a honeycomb structure composed of graphite sheets closely packed by carbon atoms. Its special structure makes it have excellent electron transport ability and good adsorpti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 王辰阳王子栋孔庆凯辛宏伟
Owner 北京中科海芯科技有限公司
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