Silicon carbide wafer stripping method and stripping device

Abstract

The invention relates to the technical field of silicon carbide wafer manufacturing, and discloses a silicon carbide wafer stripping method and device, and the method comprises the steps: enabling a silicon carbide crystal ingot as an anode to be connected with a voltage output end through a conductive layer on the silicon carbide crystal ingot, and arranging a cathode in etching liquid to be connected with a voltage input end; focusing laser at a preset depth in the silicon carbide crystal ingot, scanning inwards from the edge of the silicon carbide crystal ingot to form an amorphous layer, and irradiating the surface of the silicon carbide crystal ingot with incident light larger than an absorption light wavelength critical value corresponding to the single crystal layers on the two sides of the surface of the amorphous layer; in the irradiation process, positive constant potential is provided for the silicon carbide crystal ingot to etch the amorphous layer, stripping of the single crystal layer is rapidly achieved, and the silicon carbide wafer is obtained. According to the etching process method, the silicon carbide wafer with the controllable thickness can be rapidly obtained.

Description

technical field [0001] The invention relates to the technical field of silicon carbide wafer manufacturing, in particular to a silicon carbide wafer peeling method and a peeling device. Background technique [0002] At present, a diamond wire saw slicing process is generally adopted as a method for producing silicon carbide wafers. Although high-yield silicon carbide wafers can be obtained, each diamond wire causes a kerf loss thickness of more than 180 μm in the silicon carbide material, and the diamond wire is severely lost. On the other hand, the mechanical vibration and stress generated during the diamond wire sawing process will cause a large number of mechanical damages such as scratches and cracks on the surface of the wafer. It is necessary to further remove the surface layer with a total thickness of about 150 μm to eliminate the impact caused by the wire cutting process. . Therefore, to produce a silicon carbide wafer with a thickness of about 350 μm, about 330 μ...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to overcome the problem of low efficiency of existing stripping methods, and provide a stripping method and stripping device for silicon carbide wafers

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