A semi-insulating gallium arsenide single crystal and its preparation method and growth device

Abstract

The present application discloses a semi-insulating gallium arsenide single crystal and a preparation method and growth device thereof. The preparation method includes: S1: put the crystal raw material into a PBN crucible and transfer it into a quartz crucible; put graphite into a quartz cap, and then mix with the quartz The crucible is sealed and connected; S2: loaded into the VGF single crystal furnace after the sealed connection, and the quartz cap and the quartz crucible are located in different temperature zones; S3: the temperature zone where the quartz crucible is located is heated to the temperature of the chemical material, and the temperature zone where the quartz cap is located is controlled to be warmed up to 1000±50°C; S4: keep the chemical material in the temperature zone where the quartz crucible is located at the temperature of the chemical material, control the temperature zone where the quartz cap is located to heat up to 1200±50°C and keep the temperature for 4-50h; S5: control the temperature zone where the quartz cap is located to cool down to 1000°C ℃ ± 50 ℃ and keep warm, carry out atmosphere doping, crystal growth; S6: cooling and discharging. The method of the present application can effectively improve the uniformity of the amount of carbon doping and electrical properties inside the gallium arsenide crystal.

Description

technical field [0001] The present application relates to the field of single crystal compounds, in particular to a semi-insulating gallium arsenide single crystal, a preparation method and a growth device thereof. Background technique [0002] Gallium arsenide (GaAs) material is the most important material in the second generation of new compound semiconductors after silicon single crystal. It has excellent performance, high electron mobility and photoelectric conversion efficiency, and is widely used in microelectronics and optoelectronics, especially in the process of 5G commercialization, which will play an irreplaceable role. [0003] Resistivity and mobility are the main performance parameters of semi-insulating gallium arsenide (GaAs) crystals, and the carbon concentration in the crystal has an important effect on resistivity and mobility. In the existing VGF method to grow semi-insulating gallium arsenide crystals, the reaction between high-purity graphite and oxyge...

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Problems solved by technology

[0004] In the above-mentioned VGF method, the release of oxygen from graphite and quartz at high temperature is relatively slow, resulting in the increase and slow diffusion of CO concentration in the space atmosphere, resulting in a gradient difference in the carbon content inside the gallium arsenide crystal, especially the vertical head-to-tail difference inside the crystal. obvious

The final product obtained has a resistivity distribution of 10 7 ~10 8 Between Ω·cm, the consistency of electrical properties is poor, and there are great limitations in commercial use

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