Unlock instant, AI-driven research and patent intelligence for your innovation.

MISIM type 4H-SiC ultraviolet detector with composite structure and preparation method of MISIM type 4H-SiC ultraviolet detector

A technology of ultraviolet detector and composite structure, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of unsatisfactory anti-reflection effect and limited anti-reflection performance of planar structure films, and achieve the goal of improving light Effects of utilization rate, improvement of light utilization rate, and improvement of detection performance

Active Publication Date: 2022-06-28
陕西半导体先导技术中心有限公司
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the fixed film thickness, the anti-reflection performance of the planar structure film is limited, and the planar structure film is often aimed at a single wavelength, and the anti-reflection effect for a large wavelength range is not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MISIM type 4H-SiC ultraviolet detector with composite structure and preparation method of MISIM type 4H-SiC ultraviolet detector
  • MISIM type 4H-SiC ultraviolet detector with composite structure and preparation method of MISIM type 4H-SiC ultraviolet detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] See figure 1 , figure 1 A schematic structural diagram of a MISIM type 4H-SiC ultraviolet detector with a composite structure provided in an embodiment of the present invention.

[0043] The 4H-SiC UV detector is metal-insulator-semiconductor-insulator-metal metal-insulator-semiconductor-insulator-metal, MISIM structure, including: specular reflection layer 1, 4H-SiC substrate layer 2, 4H-SiC epitaxial layer 3 , a first interface insertion layer 4 , a second interface insertion layer 5 , a first transparent Schottky electrode 6 , a second transparent Schottky electrode 7 , an InGaN / GaN quantum well layer 8 and an anti-reflection array 9 . Among them, the specular reflection layer 1, the 4H-SiC substrate layer 2 and the 4H-SiC epitaxial layer 3 are stacked in sequence; the first interface insertion layer 4 is located at one end of the 4H-SiC epitaxial layer 3, and the second interface insertion layer 5 is located at the 4H-SiC epitaxial layer. The other end of layer 3;...

Embodiment 2

[0055] On the basis of Example 1, please refer to figure 2 , figure 2 A schematic flowchart of a method for preparing a MISIM type 4H-SiC ultraviolet detector with a composite structure provided in an embodiment of the present invention. The preparation method includes the steps:

[0056] S1. A 4H-SiC epitaxial layer 3 is grown on the surface of the 4H-SiC substrate layer 2 .

[0057] Specifically, firstly, the thickness of 400 μm and the nitrogen doping concentration of 5 × 10 19 cm -3 The N+ 4H-SiC substrate was cleaned according to RCA standard. Then, the surface of the cleaned 4H-SiC substrate layer 2 is grown by chemical vapor deposition (Chemical Vapor Deposition, CVD) with a doping concentration of 1 × 10 16 cm -3 The N-4H-SiC epitaxial layer 3, the growth temperature is 1600ºC~1900ºC.

[0058] S2. The surface of the 4H-SiC epitaxial layer 3 is treated by an oxygen plasma method to form a first interface insertion layer 4 located at one end of the 4H-SiC epitax...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a MISIM type 4H-SiC ultraviolet detector with a composite structure and a preparation method thereof, and the detector comprises a mirror reflection layer, a 4H-SiC substrate layer, a 4H-SiC epitaxial layer, a first interface insertion layer, a second interface insertion layer, a first transparent Schottky electrode, a second transparent Schottky electrode, an InGaN / GaN quantum well layer, and an anti-reflection array. The mirror reflection layer, the 4H-SiC substrate layer and the 4H-SiC epitaxial layer are stacked in sequence; the first interface insertion layer is located at one end of the 4H-SiC epitaxial layer, and the second interface insertion layer is located at the other end of the 4H-SiC epitaxial layer; the first transparent Schottky electrode is located on the first interface insertion layer, and the second transparent Schottky electrode is located on the second interface insertion layer; the InGaN / GaN quantum well layer is located on the 4H-SiC epitaxial layer; and the anti-reflection array is distributed on the InGaN / GaN quantum well layer. The detector can improve the utilization rate of light.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to a MISIM type 4H-SiC ultraviolet detector with a composite structure and a preparation method thereof. Background technique [0002] Ultraviolet detector is a device that can convert ultraviolet light signal into electrical signal. Ultraviolet photodetector is used in national defense, ultraviolet astronomy, environmental monitoring, fire detection, turbine engine combustion efficiency monitoring, combustible gas composition analysis and biological cell cancer detection, etc. It has broad prospects and is a hot spot in the field of photoelectric detection in the world in recent years. With the emergence of the third-generation wide-bandgap semiconductor materials, especially 4H-SiC, due to its wide-bandgap, high critical breakdown electric field, and high thermal conductivity, the emergence of UV photodetectors fabricated from it has promoted the Deve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/0232H01L31/0352H01L31/108H01L31/18
CPCH01L31/02161H01L31/022408H01L31/022466H01L31/02327H01L31/1085H01L31/18H01L31/035236Y02P70/50
Inventor 田鸿昌杜丰羽张玉明汤晓燕宋庆文袁昊
Owner 陕西半导体先导技术中心有限公司