Unlock instant, AI-driven research and patent intelligence for your innovation.

Chemical mechanical polishing pads having windows with transparency at low wavelengths and materials for such windows

A polishing material and polishing pad technology, applied in the field of polishing pads, can solve the problems of no transmittance, undesired mechanical properties, etc.

Pending Publication Date: 2022-07-01
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although US 10,293,456 discloses compositions with UV cutoff below 325nm, these compositions may have undesired mechanical properties in certain applications and may not have acceptable transmission at 250nm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing pads having windows with transparency at low wavelengths and materials for such windows
  • Chemical mechanical polishing pads having windows with transparency at low wavelengths and materials for such windows
  • Chemical mechanical polishing pads having windows with transparency at low wavelengths and materials for such windows

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0053] Example 1. Two-step process to form polyurethane compositions

[0054] The PTMEG was heated to 65°C before use. The heated PTMEG and catalyst were added to the mixing cup and vortexed at 1000 RPM for 30 seconds. The H12MDI was then added to the mixing cup and vortexed again for 30 seconds. The mixing cup was then placed in an oven at 80°C for 4 hours to complete the reaction of the isocyanate with the diol. Before using the prepolymer, it was degassed through a vacuum chamber. The degassed prepolymer Voranol TM 800 polyol preheated to 65°C. Add a certain amount of Voranol TM 800 polyol to make unreacted NCO from prepolymer composition: Voranol TM The molar ratio of the hydroxyl groups of the 800 polyol was 1.05:1 and mixed by vortexing. The reaction mixture was degassed again before being added to the mold. The sample in the mold was then heated in an oven to 80°C for 8 hours, followed by a further 4 hours at 110°C.

[0055] For the compositions of the pres...

example 2

[0058] Example 2. Window material characterization

[0059] Various polyurethanes are characterized by various properties such as:

[0060] hardness

[0061] Six 1.5" x 1.5" samples were cut from each substrate. Four samples were used for density testing, while all six samples were used for hardness testing. The length and width of the samples were measured for dimensional density using Fisher Vemier calipers. Sample thickness was measured using a Fowler micrometer. Hardness was measured on a Rex / Hybrid hardness tester with a D probe. For each hardness measurement, six samples were stacked and scrambled so that each sample was probed once.

[0062] tensile test

[0063] Analysis was performed according to ASTM D412-06a "Standard Test Method for Vulcanized Rubber and Thermoplastic Elastomers - Tensile". The samples were die cut to dog bone C size. An Alliance RT / 5 Materials Testing System (MTS) running TestWorks 4 software was used. Data was collected at 500 Hz with ...

example 3

[0074] Example 3. One-step aggregation

[0075] The catalyst, XP2716 and TMP were added to the mixing cup and heated to 80°C until the TMP melted. The mixture was then vortexed and degassed. To the reaction mixture was added H12MDI and then vortexed. The reaction mixture was degassed again before being added to the mold. The sample in the mold was then heated in an oven to 80°C for 8 hours, followed by a further 4 hours at 110°C. The composition of the samples is shown in Table 4. The samples were characterized as described above and the results are shown in Table 5.

[0076] Table 4

[0077]

[0078] table 5

[0079]

[0080] image 3 and the transmittance shown in Table 6 shows that the addition of Merpol TM A hard segment inhibitor increases transmission at wavelengths of 250 nm and even lower wavelengths.

[0081] Table 6

[0082]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

A polishing pad for chemical mechanical polishing. The polishing pad includes a polishing portion having a top polishing surface and a polishing material. There is an opening through the polishing pad and a transparent window within the opening. And the transparent window is fixed on the polishing pad. The window includes a polyurethane composition formed by reacting a polymeric polyol, a polyisocyanate, and a curing agent in the presence of a hard segment inhibitor to reduce the hard segment domain size. The curing agent comprises three or more hydroxyl groups forming hard segments, and the polyurethane composition is an amorphous mixture of hard segments in a soft segment matrix and does not contain a carbon-carbon double bond.

Description

technical field [0001] The present invention generally relates to the field of polishing pads for chemical mechanical polishing of substrates, such as magnetic, optical, and semiconductor substrates, including front-end (FEOL) or back-end (BEOL) processing of memory and logic integrated circuits, wherein The polishing pad has a window that facilitates endpoint detection. The invention also relates to materials for such windows. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive, and dielectric materials are deposited on or partially or selectively removed from the surface of a semiconductor wafer. Thin layers of conductive, semiconductive, and dielectric materials can be deposited using a number of deposition techniques. Common deposition techniques in modern wafer processing include, among others, physical vapor deposition (PVD) (also known as sputtering), chemical vapor depos...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/26B24B37/20B24B37/22B24B37/24B24B37/005B24B49/12H01L21/306
CPCB24B37/26B24B37/205B24B37/22B24B37/24B24B37/005B24B49/12H01L21/30625H01L21/67092B24D3/32B24D3/28B24D3/30
Inventor M·R·加丁科M·E·古兹曼
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC