Preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as affecting the optoelectronic performance and working life of devices, and achieve the effect of optimizing injection balance, improving recombination efficiency, and improving EQE.

Pending Publication Date: 2022-07-01
TCL CORPORATION
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AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a method for preparing a quantum dot light-emitting diode, aiming at solving the problem that the hydroxyl group on the surface of zinc oxide has a certain quenching effect

Method used

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  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode

Examples

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preparation example Construction

[0015] like figure 1 As shown, an embodiment of the present application provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0016] S01. provide a prefabricated device, form a zinc oxide nanomaterial on the prefabricated device, and prepare an electron transport layer;

[0017] S02. The treated device is subjected to heat treatment so that the amount of hydroxyl groups on the surface of the electron transport layer is 0.15-0.6.

[0018] In the method for preparing a quantum dot light-emitting diode provided by the embodiments of the present application, the amount of hydroxyl groups on the surface of the electron transport layer is regulated by heating a device prepared with an electron transport layer, thereby reducing the amount of hydroxyl groups on the surface of the zinc oxide of the electron transport layer to the light-emitting layer of the quantum dots. Fluorescence quenching, at the same time, heat treatment can reduce...

Embodiment 1

[0044] A preparation method of a quantum dot light-emitting diode, comprising:

[0045] PEDOT:PSS was spin-coated on the anode ITO to prepare a hole injection layer; TFB was spin-coated on the hole-injection layer to prepare a hole-transport layer; CdZnSe / ZnSe / ZnS red quantum dots were spin-coated on the hole-transport layer to prepare A quantum dot light-emitting layer; spin-coating ZnO with a surface hydroxyl amount of 0.9 on the quantum dot light-emitting layer to prepare an electron transport layer; vapor-depositing Al to prepare a cathode, and packaging to form a quantum dot electroluminescent device.

[0046] The well-packaged devices were placed on a 150°C hot plate for 10 min to heat treatment.

[0047] When the quantum dot light-emitting diode is prepared by the method provided in Example 1, the schematic diagram of the change of hydroxyl groups in the electron transport layer before and after heating is as follows: figure 2 shown.

Embodiment 2

[0051] A preparation method of a quantum dot light-emitting diode, which is different from Example 1 is: spin-coating ZnO with a surface hydroxyl content of 0.7 on the quantum dot light-emitting layer to prepare an electron transport layer; placing the well-packaged device at 100 Bake on a ℃ hot plate for 20 min for heat treatment.

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Abstract

The invention relates to the technical field of display, and provides a preparation method of a quantum dot light emitting diode. The method comprises the following steps: providing a prefabricated device, forming a zinc oxide nano material on the prefabricated device, and preparing an electron transport layer; and carrying out heating treatment on the treated device to enable the surface hydroxyl content of the electron transport layer to be 0.15-0.6. The device prepared with the electron transport layer is subjected to heating treatment, the surface hydroxyl amount of the electron transport layer is regulated and controlled, the fluorescence quenching effect of the zinc oxide surface hydroxyl of the electron transport layer on the quantum dot light emitting layer is reduced, meanwhile, the surface hydroxyl amount of the electron transport layer can be reduced through heating treatment, and the quantum dot light emitting efficiency is improved. Along with reduction of the number of hydroxyl groups on the surface of zinc oxide, electron and hole injection balance is optimized, the carrier radiation recombination efficiency is improved, and the EQE and the service life of the device in a working state are improved.

Description

technical field [0001] The present application belongs to the field of display technology, and in particular relates to a preparation method of a quantum dot light-emitting diode. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) have gained extensive attention and research in the field of lighting and display in recent years due to their high brightness, low power consumption, wide color gamut, and easy processing. QLED is considered to be the development trend of next-generation display and lighting because of its ability to realize self-luminous, low-power full-color display and solid-state lighting. After more than 20 years of rapid development, QLED has obtained better performance parameters. [0003] With the research and development of quantum dot light-emitting diode devices, nano-zinc oxide has been widely used as an electron transport layer material. However, as the electron transport layer material of zinc oxide is stacked adjacent to the qu...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/40H10K50/115H10K50/16H10K2102/00H10K71/00H10K85/00H10K50/00
Inventor 周礼宽杨一行
Owner TCL CORPORATION
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