Transparent perovskite thin film transistor

Abstract

The transparent perovskite thin film transistor comprises a transparent substrate, a source electrode, a drain electrode, a gate electrode, an insertion layer, a semiconductor layer and a ferroelectric dielectric layer, the insertion layer is a transparent metal oxide and is arranged between the source electrode, the drain electrode and the semiconductor layer; the ferroelectric dielectric layer is located between the gate electrode and the semiconductor layer; the semiconductor layer is a transparent perovskite thin film. A layer of metal oxide thin film is inserted between the source electrode, the drain electrode and the transparent perovskite thin film to serve as an electron injection layer so as to reduce the electron injection barrier and improve the electron injection efficiency. Meanwhile, a ferroelectric material is used as a dielectric layer to inhibit a gate voltage shielding effect caused by ion migration of the transparent perovskite thin film; the transparent perovskite thin film transistor prepared on the basis can work at room temperature and is good in stability.

Description

technical field [0001] The invention belongs to the field of organic-inorganic hybrid perovskite organic field effect transistors, and more particularly, relates to the preparation of transparent perovskite thin film transistors. Background technique [0002] In recent years, organic-inorganic hybrid perovskites have attracted extensive attention as solution-processable semiconductor materials. First-principles theoretical calculations show that organic-inorganic hybrid perovskites exhibit bulk mobilities as high as 10–100 cm 2 V -1 S -1 . Its high carrier mobility and long carrier diffusion length make it have good optical and electrical properties. At the same time, the high absorption coefficient, tunable band gap, and low temperature solution processing characteristics of this material make it have broad application prospects in the field of optoelectronic devices. [0003] MAPbCl 3 It is a typical organic-inorganic hybrid perovskite, which has a wide band gap (2.9...

AI Technical Summary

Problems solved by technology

However, due to the ion-shielding effect of perovskite materials, it is difficult for transistors fabricated by common thin-film transistor fabrication methods to work effectively at room temperature.

In addition, for transparent perovskite films such as MAPbCl 3 thin film, its band gap is wide, and the gold-semi-contact barrier is large, so that electrons cannot be effectively injected into MAPbCl 3 Therefore, it is difficult to prepare transparent perovskite thin film transistors that can work stably at room temperature

Although previous studies on MAPbCl 3 The research report of the single crystal transistor (US10749120B2), but the single crystal device cannot be prepared in a large area, and the application value is limited

Based on MAPbCl 3 The thin film transistor is a non-single crystal device, so it can be prepared in a large area and has high application value. However, there is no MAPbCl 3 Related reports on thin film transistors

Images