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Application of metal tetraphenylporphyrin compound in electron transport material, quantum dot light-emitting device, preparation method of quantum dot light-emitting device and light-emitting device

An electron transport material, the technology of tetraphenylporphyrin, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of reducing the energy level of the bottom conduction band of quantum dots, increasing the number of quantum dots and cathode electrons Potential barrier and other issues, to achieve the effect of improving life, reducing electron injection barrier, and reducing electronic conductivity

Active Publication Date: 2021-02-05
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But on the other hand, the coating of the wide bandgap shell reduces the energy level at the bottom of the conduction band of the quantum dots, which increases the electronic potential barrier between the quantum dots and the cathode. This is especially obvious in blue QLEDs. The lifetime negatively impacts even more than the hole barrier

Method used

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  • Application of metal tetraphenylporphyrin compound in electron transport material, quantum dot light-emitting device, preparation method of quantum dot light-emitting device and light-emitting device
  • Application of metal tetraphenylporphyrin compound in electron transport material, quantum dot light-emitting device, preparation method of quantum dot light-emitting device and light-emitting device
  • Application of metal tetraphenylporphyrin compound in electron transport material, quantum dot light-emitting device, preparation method of quantum dot light-emitting device and light-emitting device

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preparation example Construction

[0069] The preparation method comprises the following steps:

[0070] An anode is provided, and a quantum dot light-emitting layer is formed on the anode;

[0071] forming an electron transport layer on the quantum dot light-emitting layer;

[0072] forming a cathode on the electron transport layer;

[0073] Wherein, the material forming the electron transport layer includes nano-ZnO and metal tetraphenylporphyrin complex mixed with each other; the metal elements in the metal tetraphenylporphyrin complex are selected from monovalent metal elements, divalent metal elements and One of the trivalent metal elements.

[0074] Specifically, the materials for each functional layer in the above quantum dot light-emitting device can be deposited by a solution method, spin coating, spray coating, inkjet printing and the like to form each functional layer.

[0075] Another embodiment of the present invention provides a method for preparing the above-mentioned quantum dot light-emittin...

Embodiment 1

[0084] (1), using the transparent conductive thin film ITO as the anode, the thickness is 50nm.

[0085] (2) Deposit PEDOT:PSS as a hole injection layer on the anode by a solution method, with a thickness of 50 nm.

[0086] (3) Depositing TFB as a hole transport layer on the hole injection layer by a solution method, with a thickness of 30 nm.

[0087] (4) On the hole transport layer, ZnCdS / ZnS is deposited as a quantum dot light-emitting layer by a solution method, with a thickness of 25 nm.

[0088] (5), utilize solution method to deposit ZnO nanoparticle on quantum dot luminescent layer: porphyrin magnesium (represent the mixed solution of ZnO nanoparticle and porphyrin magnesium, the weight concentration ratio of ZnO nanoparticle and porphyrin magnesium in the solution is 90: 10) As an electron transport layer, the thickness is 50nm.

[0089] (6) Depositing Ag on the electron transport layer as a cathode with a thickness of 100 nm by vapor deposition.

Embodiment 2

[0091] (1), using the transparent conductive thin film ITO as the anode, the thickness is 50nm.

[0092] (2) Deposit PEDOT:PSS as a hole injection layer on the anode by a solution method, with a thickness of 50 nm.

[0093] (3) Depositing TFB as a hole transport layer on the hole injection layer by a solution method, with a thickness of 30 nm.

[0094] (4) On the hole transport layer, ZnCdS / ZnS is deposited as a quantum dot light-emitting layer by a solution method, with a thickness of 25 nm.

[0095] (5) Deposit ZnO nanoparticles: porphyrin magnesium (weight concentration ratio: 80:20) on the quantum dot light-emitting layer by solution method as the electron transport layer, with a thickness of 50nm.

[0096] (6) Depositing Ag on the electron transport layer as a cathode with a thickness of 100 nm by vapor deposition.

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Abstract

The invention relates to application of a metal tetraphenylporphyrin compound in an electron transport material, a quantum dot light-emitting device, a preparation method of the quantum dot light-emitting device and a light-emitting device. The quantum dot light-emitting device comprises an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the cathode and the quantum dot light-emitting layer, wherein the electron transport layer comprises nano ZnO and at least one metal tetraphenyl porphyrin compound which are mixed with each other. According to the quantum dot light-emitting device, the electron transport layer comprising the nano ZnO and the metal tetraphenylporphyrin compound which are mixedwith each other is arranged between the cathode and the quantum dot light-emitting layer, so that on the one hand, the problem of excessive electrons of the quantum dot light-emitting layer is relieved; on the other hand, the conduction band bottom energy level of the electron transport layer is reduced through introduction of porphyrin groups, the electron injection barrier of the QLED is reduced, and the service life of the QLED is prolonged from multiple aspects.

Description

technical field [0001] The invention relates to the technical field of display and lighting, in particular to the application of a metal tetraphenylporphyrin complex in electron transport materials, a quantum dot light-emitting device, a preparation method thereof, and a light-emitting device. Background technique [0002] Due to the unique optical properties of quantum dots, such as continuously adjustable emission wavelength with the size and composition of quantum dots, narrow emission spectrum, high fluorescence efficiency, and good stability, quantum dot-based electroluminescent devices (QLEDs) are widely used in The field of display has received extensive attention and research. In addition, QLED display also has many advantages that cannot be realized by LCD (liquid crystal display), such as large viewing angle, high contrast ratio, fast response speed, and flexibility, so it is expected to become the next generation of display technology. [0003] After decades of d...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/30H10K50/115H10K50/16H10K71/00H10K2102/00Y02E10/549
Inventor 苏亮
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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