Unlock instant, AI-driven research and patent intelligence for your innovation.

Tungsten trioxide/manganese tungstate/cobalt tungstate photoelectrode material and preparation method and application thereof

A photoelectrode, manganese acetate technology, applied in the direction of electrodes, electrolytic components, electrolytic process, etc.

Active Publication Date: 2022-07-29
TAIZHOU UNIV +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional heterojunction interface is often difficult to realize the effective separation of carriers and the rapid injection of interfacial charges at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tungsten trioxide/manganese tungstate/cobalt tungstate photoelectrode material and preparation method and application thereof
  • Tungsten trioxide/manganese tungstate/cobalt tungstate photoelectrode material and preparation method and application thereof
  • Tungsten trioxide/manganese tungstate/cobalt tungstate photoelectrode material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] The present invention provides a WO 3 / MnWO 4 / CoWO 4 The preparation method of the photoelectrode material includes the following steps:

[0027] (1) manganese acetate, cobalt acetate and water are mixed to obtain metal salt mixed solution;

[0028] (2) Put WO 3 The film is immersed in the metal salt mixed solution for in-situ hydrothermal reaction to obtain WO loaded with mixed metal salts 3 film; the WO 3 The film includes a substrate and WO supported on the surface of the substrate 3 Nanoplate particles;

[0029] (3) WO loaded with mixed metal salts 3 The films were washed, dried and calcined sequentially to obtain WO 3 / MnWO 4 / CoWO 4 photoelectrode material.

[0030] In the present invention, manganese acetate, cobalt acetate and water are mixed to obtain a metal salt mixed solution. In the present invention, the molar ratio of the manganese acetate and cobalt acetate is preferably 50-100:1, more preferably 50-70:1; the concentration of manganese aceta...

Embodiment 1

[0045] Preparation of WO 3 Film: Weigh 0.1237g sodium tungstate and dissolve it in 30mL water to prepare a sodium tungstate solution; weigh 0.1172g ammonium oxalate and dissolve it in 30mL water to prepare an ammonium oxalate solution; then add 10mL to the prepared sodium tungstate solution A hydrochloric acid solution with a concentration of 3 mol / L was magnetically stirred until the solution formed a white suspension, then the prepared ammonium oxalate solution was added, and the solution returned to a clear solution. Transfer the clear solution to a 100mL reactor with an area of ​​5×2.5cm 2 The FTO was washed three times with ethanol, acetone and ultrapure water respectively, and the cleaned FTO was completely immersed in the clear solution in the lining of the reactor with the conductive side facing down, then the autoclave was sealed and hydrothermally heated at 140 °C for 4 h . After the reactor is cooled, take out the WO 3 The film was wiped off the 7mm edge, washed ...

Embodiment 2

[0054] Preparation of WO 3 Film: Same as Example 1.

[0055] Weigh 0.5 g of manganese acetate, 0.01 g of cobalt acetate and 30 mL of water, mix, stir and dissolve to obtain a metal salt mixture; cut the area into 3 × 2.5 cm 2 WO 3 The conductive surface of the film was immersed in a mixed solution of metal salts, and the in-situ hydrothermal reaction was performed at 130 °C for 4 h to obtain WO loaded with mixed metal salts. 3 film, then the WO supported with mixed metal salts 3 The film was washed three times with deionized water, dried at room temperature naturally, and then calcined, heated to 650 °C at a heating rate of 3 °C / min, calcined for 3 h in an air atmosphere, and then cooled in a concentrated hydrochloric acid solution. Soak for 60min, then wash and dry to get WO 3 / MnWO 4 / CoWO 4 photoelectrode material.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Current densityaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of photoelectrode materials, and provides a WO3 / MnWO4 / CoWO4 photoelectrode material and a preparation method and application thereof. The preparation method of the photoelectrode material provided by the invention comprises the following steps: mixing manganese acetate, cobalt acetate and water to obtain a metal salt mixed solution; immersing a WO3 thin film in the metal salt mixed solution for in-situ hydrothermal reaction to obtain a mixed metal salt loaded WO3 thin film; the WO3 thin film comprises a substrate and WO3 nano-plate particles loaded on the surface of the substrate; the WO3 thin film loaded with the mixed metal salt is sequentially washed, dried and calcined, and the WO3 / MnWO4 / CoWO4 photoelectrode material is obtained. According to the WO3 / MnWO4 / CoWO4 photoelectrode material prepared by the invention, effective separation of current carriers and rapid injection of interface charges can be simultaneously realized, and the water oxidation activity of a MnWO4 electrode is greatly improved.

Description

technical field [0001] The invention relates to the technical field of photoelectrode materials, in particular to a WO 3 / MnWO 4 / CoWO 4 Photoelectrode material, preparation method and application thereof. Background technique [0002] Extensive use of traditional fossil fuels leads to atmospheric CO 2 The content increases, which requires the development of cleaner energy sources to gradually replace fossil energy sources. Semiconductor photocatalysis technology can utilize solar energy to realize hydrogen production, which provides an effective way for the generation of clean energy. The principle of photocatalytic technology is to use light to excite semiconductor materials to generate electron-hole pairs. Under the action of a small amount of external bias, the electrons and holes can be effectively separated. The separated electrons undergo a reduction reaction with hydrogen ions in the solution to generate hydrogen, while the holes oxidize water molecules to gener...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25B11/091C25B11/052C25B1/04C25B1/55C03C17/34C03C17/23
CPCC25B11/091C25B11/052C25B1/04C25B1/55C03C17/002C03C17/23C03C17/3417C03C2217/71C03C2217/94C03C2217/40C03C2217/23C03C2218/32Y02E60/36
Inventor 熊贤强张晓梅优阳韩得满武承林吴琛琦
Owner TAIZHOU UNIV