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Preparation method of indium phosphide vertical wedge-shaped structure in spot size converter

A technology of mold spot converter and indium phosphide, which is applied to the photoplate making process, instruments, and optomechanical equipment of the pattern surface, can solve the problem of difficult to obtain a smooth semiconductor slope, difficult to accurately control slope structural parameters, and complicated process cumbersome and other problems, to achieve the effect of high controllability, low cost, and simple process

Active Publication Date: 2022-07-29
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problems of this method are: (1) It is difficult to control the structural parameters of the slope obtained by etching more accurately, including length, slope, etc.; (2) It is difficult to obtain by ordinary wet etching methods. Semiconductor ramps with flat surfaces and an inclination angle of less than 10°
However, the process is complex and cumbersome, and generally requires the use of expensive projection lithography machines

Method used

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  • Preparation method of indium phosphide vertical wedge-shaped structure in spot size converter
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  • Preparation method of indium phosphide vertical wedge-shaped structure in spot size converter

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Embodiment 1

[0052] The operation steps for preparing an indium phosphide vertical wedge structure in a mode spot converter are as follows:

[0053] (1) Single-exposure lithography fabrication of photoresist stripe pattern

[0054] (1.1) Gluing

[0055] see figure 1 , the rectangular plate-shaped indium phosphide substrate 1 is placed in hexamethyldisilazane (HMDS) vapor for film formation treatment, and hexamethyldisilazane (HMDS) plays the role of photoresist (PR) adhesion promoting effect. Then, a positive photoresist layer 2 is coated on the surface of one side of the indium phosphide substrate 1 using a spin coating method. The material of the positive photoresist layer 2 is positive AZ5214 photoresist or AZ452 photoresist.

[0056] (1.2) Drying, exposure, development

[0057] Under the condition of 50°C, the indium phosphide substrate 1 with the positive photoresist layer 2 is dried. A single exposure of the positive photoresist layer 2 is performed using an i-line contact lith...

Embodiment 2

[0071] see Figure 11 , on the basis of Embodiment 1, a mode spot converter 18 with an indium phosphide vertical wedge structure 16 connecting a single-mode fiber 19 and a side-incident waveguide PIN detector 20, the mode spot converter 18 and the waveguide PIN detector The device 20 is integrated on the same indium phosphide substrate 14 . The mode-spot converter 18 is composed of an indium phosphide ridge waveguide 15 with a width of 3 μm and a thickness of 200 nm, an indium phosphide vertical wedge structure 16 with a height of 880 nm, a width of 16 μm and a length of 1100 μm, and an indium gallium arsenide phosphorus diluted waveguide layer 17 with a thickness of 5 μm.

[0072] The difficulty in the fabrication of the mode-spot converter 18 lies in the fabrication of the indium phosphide vertical wedge structure 16 . The indium gallium arsenide phosphorus diluted waveguide layer 17 and an indium phosphide layer on the diluted waveguide layer can be obtained by an epitaxia...

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Abstract

The invention relates to a preparation method of an indium phosphide vertical wedge-shaped structure in a spot size converter, and belongs to the technical field of photoelectron processing. The method comprises the following operation steps: (1) single exposure photoetching manufacturing of a photoresist strip line pattern, (2) manufacturing of a photoresist slope mask, and (3) dry etching of an indium phosphide vertical wedge-shaped structure at normal temperature to obtain the vertical wedge-shaped structure. The vertical wedge-shaped structure realizes adiabatic conversion of the mode of the emergent light of the single-mode optical fiber into a mode supported by a detector transmission waveguide connected with the spot size converter, and the reduction of the spot size of the emergent light of the single-mode optical fiber is completed. According to the invention, dry etching is carried out at normal temperature, so that deformation and carbonization of the photoresist mask cannot be caused. According to the method, the etching selection ratio of the indium phosphide to the photoresist is regulated and controlled only by regulating the radio frequency (RF) power and the inductively coupled plasma (ICP) power in a dry etching formula, and the slope inclination angle of the obtained indium phosphide vertical wedge-shaped structure is regulated and controlled more accurately.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic processing, and in particular relates to a method used in the field of semiconductor optoelectronic devices, using photoresist as a mask to perform dry etching under normal temperature conditions to obtain indium phosphide (InP) vertical Preparation process of wedge-shaped structure. Background technique [0002] In recent years, with the rapid development of optical communication and optical information processing technology, various semiconductor optoelectronic devices have also been widely used. Angular dispersive devices (such as prisms) play an increasing role. The wedge-shaped structure of semiconductors is also used more and more in devices such as optical waveguide coupling devices (such as mode-spot converters). [0003] Indium phosphide (InP) vertical wedge structure is a typical semiconductor wedge structure. It is a slope with a small angle of inclination. It is mainly used in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/136G02B6/14G03F7/00
CPCG02B6/136G02B6/14G03F7/00G02B2006/12097G02B2006/12152Y02P70/50
Inventor 王亮江致远蒋忠君蒋凯
Owner UNIV OF SCI & TECH OF CHINA