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Gas phase doping method for growing compound semiconductor single crystal based on horizontal gradient solidification method

A horizontal gradient, gas-phase doping technology, applied in the direction of self-solidification, chemical instruments and methods, crystal growth, etc., to ensure the uniformity of doping, improve crystal quality and performance, and improve crystal utilization.

Pending Publication Date: 2022-08-05
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to solve the existing problems caused by the common growth methods and doping techniques of compound semiconductor crystals, and propose a gas phase doping method for growing compound semiconductor crystals by horizontal gradient solidification

Method used

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  • Gas phase doping method for growing compound semiconductor single crystal based on horizontal gradient solidification method
  • Gas phase doping method for growing compound semiconductor single crystal based on horizontal gradient solidification method
  • Gas phase doping method for growing compound semiconductor single crystal based on horizontal gradient solidification method

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Embodiment 1

[0049] like figure 1 A gas-phase doping method for growing compound semiconductor single crystals based on a horizontal gradient solidification method is shown, comprising the following steps:

[0050] Step 1: According to the CdZnTe phase diagram, weigh high-purity (7N) elemental Cd, Zn, Te growth raw materials, and dopant Se according to Cd 0.9 Zn 0.1 The stoichiometric ratio of Te is weighed, and the mass of the charging material is 8 times the diameter of the crucible after the raw material is melted. The raw materials of Cd, Zn and Te are placed in the first quartz crucible, and the dopant Se is placed in the second quartz crucible , put the two quartz crucibles with the raw materials in the third quartz crucible at the same time, and vacuum the third quartz crucible, and the vacuum degree reaches 5*10 -4 Seal the quartz crucible with oxyhydrogen flame when Pa;

[0051] Step 2: as figure 2 As shown, the closed third quartz crucible was placed in a multi-stage tempera...

Embodiment 2

[0064] Step 1: According to the phase diagram of CdMnTe, weigh high-purity (7N) elemental Cd, Mn, Te raw materials, and dopant Mg according to Cd 0.9 Mn 0.1 The stoichiometric ratio of Te is weighed, and the mass of the charge is 3 times the diameter of the crucible after the raw material is melted. The raw materials of Cd, Mn and Te are placed in the first quartz crucible, and the dopant Mg is placed in the second quartz crucible. , put the two quartz crucibles containing the growth raw materials and dopants in the third quartz crucible at the same time, and vacuum the third quartz crucible, and the vacuum degree reaches 5*10 - 5 When Pa, the quartz crucible was sealed with oxyhydrogen flame.

[0065] Step 2: Place the closed third quartz crucible in a multi-stage temperature-controlled crystal growth furnace, and according to the temperature setting, raise the temperature of the first quartz crucible containing the growth raw materials to 321 ° C and keep it for 2 hours, ...

Embodiment 3

[0072] Step 1: According to the InSe phase diagram, weigh high-purity (7N) elemental In, Se growth material, and dopant S according to In 0.52 Se 0.48 The stoichiometric ratio is weighed, and the charging quality is such that the length of the raw material after melting is 5 times the diameter of the crucible, the In and Se growth materials are placed in the first quartz crucible, and the dopant S is placed in the second quartz crucible. The two quartz crucibles containing the growth raw materials and dopants are placed in the third quartz crucible at the same time, and the third quartz crucible is evacuated, and the vacuum degree reaches 5*10 -7 The third quartz crucible was closed with an oxyhydrogen flame at Pa.

[0073] Step 2: Place the closed third quartz crucible in a multi-stage temperature-controlled crystal growth furnace. According to the temperature setting, slowly heat up the region of the first quartz crucible containing the growth raw materials to 157°C and kee...

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Abstract

The invention provides a gas phase doping method for growing a compound semiconductor single crystal based on a horizontal gradient solidification method. The gas phase doping method is based on a compound semiconductor crystal growth technology, and solves the problems of intrinsic defects and non-uniform electrical properties in a compound semiconductor growth process. According to the method, a growth raw material and a doping agent are separated, temperature control is carried out through a multi-section temperature control crystal growth furnace, and synthesis, crystal growth and annealing processes of a polycrystal material are simultaneously realized in the same container. According to the temperature design, the temperature of the dopant is strictly controlled to regulate and control the gas pressure of the dopant in different growth stages, so that the gaseous doping element is doped into the internal lattice point position of the crystal in the crystal growth process, and the doping uniformity and lattice integrity of the dopant in the whole growth process can be ensured; therefore, defect compensation and electrical property uniform regulation and control are realized, the semiconductor crystal which is uniform in the radial direction and the axial direction is obtained, and the crystallization quality and performance of the semiconductor crystal are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor crystal preparation, and in particular relates to a gas-phase doping method for growing compound semiconductor single crystals based on a horizontal gradient solidification method. Background technique [0002] With the development of electronic materials for semiconductor devices and integrated circuits, the current research on semiconductor single crystals has developed to the third generation. The electron mobility of compound semiconductors is much faster than that of the first generation of silicon semiconductors, and is suitable for high-frequency transmission. It is used in radio communications such as mobile phones, base stations, wireless local area networks, satellite communications, and satellite positioning. Direct band gap, suitable for light-emitting fields, such as light-emitting diodes (LEDs), laser diodes (LDs), light receivers (PINs), and solar cells; therefore, compound se...

Claims

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Application Information

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IPC IPC(8): C30B11/06C30B29/48C30B29/46C30B33/02
CPCC30B11/06C30B11/006C30B11/003C30B29/48C30B29/46C30B33/02Y02P70/50
Inventor 郑丹王涛
Owner NORTHWESTERN POLYTECHNICAL UNIV