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Hybrid negative typed photoresistive agent in multiple reaction modes and method for forming photoesistive patterns

A technology of negative photoresist and multiple reactions, which is applied in the direction of optics, photomechanical equipment, photoplate making process of pattern surface, etc., can solve the problems of uneven reaction and difficult control of photoresist photoreaction efficiency, and achieve the goal of overcoming Effects of photoresist defects, reduction of distortion error, and high photoreaction efficiency

Inactive Publication Date: 2006-10-18
IND TECH RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the disadvantages of the existing negative photoresist of free radical polymerization reaction type that it is difficult to control the photoresist photoreaction efficiency and cause uneven reaction, and to provide a mixed negative photoresist with multiple reaction modes agent; when the photoresist undergoes photocrosslinking reaction under UV light irradiation, multiple reactions will occur simultaneously, including radical polymerization and cationic polymerization, to control the photoreaction efficiency of the photoresist and increase the uniformity of the reaction, Get a smoother photoresist surface and wall

Method used

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  • Hybrid negative typed photoresistive agent in multiple reaction modes and method for forming photoesistive patterns
  • Hybrid negative typed photoresistive agent in multiple reaction modes and method for forming photoesistive patterns
  • Hybrid negative typed photoresistive agent in multiple reaction modes and method for forming photoesistive patterns

Examples

Experimental program
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Effect test

Embodiment 1

[0052] The acrylic copolymer resin Resin A (Changchun Artificial Resin, No. 500) with molecular weight Mw of 98500 and acid value of 174mgKOH / g was dissolved in Propylene Glycol Monomethyl Ether Acetate (abbreviated as PMA) to prepare Resin solution with a resin concentration of 30 wt%. Get 20 grams of resin solution, add free radical photoinitiator 2,4,6-trimethylbenzene diphenyl phosphine oxide 2,4,6-Trimethyl Benzoyl Diphenyl Phosphine Oxide (abbreviated as TPO) 0.5 gram, 0.8 gram of Ciba company gram Irgacure 907 and 0.2 gram Isothioxanthone (abbreviated as ITX), stir until dissolved, add acrylic monomer bis-trimethylolpropane propionate Di-Trimethylolpropane Tetraacrylate2 code-named SR-355 .25 grams, 2.31 grams of Dipentaerythritol Monohydroxy Pentaacrylate code-named SR-399 and 1.5 grams of Ethoxylated Bisphenol A Diacrylate code-named SR-349, mixed and stirred evenly. The composition and weight percentage of the photoresist are shown in Table 1:

[0053] Apply the ph...

Embodiment 2

[0056] Take Joncryl 690 acrylic copolymer resin Resin B, that is, styrene-acrylic resin styreneacrylic resin, after modification, the acid value will be reduced to 200mgKOH / g, and it contains 7.13×10 unsaturated bonds -4 mol / g, molecular weight Mw is 16500, dissolved in PropyleneGlycol Monomethyl Ether Acetate (abbreviated as PMA) to prepare a resin solution with a resin concentration of 40wt%. Take 20 grams of resin solution, add 2.0 grams of free radical photoinitiator 2,4,6-trimethylbenzene diphenyl phosphine oxide Trimethyl Benzoyl Diphenyl Phosphine Oxide (abbreviated as TPO), add acrylic with code name SR-355 Monomer Di-Trimethylolpropane Tetraacrylate 1.54 grams, code-named SR-399 Dipentaerythritol Monohydroxy Pentaacrylate 0.75 grams and code-named SR-349 Ethoxy Bisphenol A diacrylate Ethoxylated BisphenolA Diacrylate 1.5 grams, stir and mix well. Its photoresist composition and weight percentage table 2:

[0057] Apply the photoresist on the 1 / 2oz copper foil substr...

Embodiment 3

[0060] The molecular weight Mw is 98500, the acid value is 174mgKOH / g acrylic copolymer resin Resin A, is dissolved in propylene glycol monomethyl ether acetate (abbreviated as PMA) in, is made into the resin that the resin concentration is 30wt% solution. Get 20 grams of resin solution, add 4.5 grams of o-cresol Novolac epoxy resin code-named CNE200, after mixing evenly, add code-named SarCat  Cycloaliphatic Diepoxide 1.5 grams of K126 and propylene glycol carbonate TriarylSulfonium Hexafluorophosphate 50% in Propylene Carbonate containing 50% triaryl hexafluorophosphate sulfonium salt 0.6 grams, code-named SarCat  0.075 g of KI85 and Isothioxanthone (abbreviated as ITX) were stirred until uniformly mixed. The composition and weight percentage of the photoresist are shown in Table 3.

[0061] Apply the photoresist on the 1 / 2oz copper foil substrate, the thickness of the photoresist is 10μm, and the pattern is set so that the resolution of the photoresist is 25μm when the ...

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Abstract

The invention relates to a mixed negative photoresist with multiple reaction modes and a method for forming a photoresist pattern; the mixed negative photoresist includes a resin compound, a photopolymerization initiator with a weight percentage of 0.1-35%, a weight percentage 0.1-100% of free radical reactive monomer, 0.1-35% by weight of photoacid generator, and 0.1-35% by weight of cationic reactive monomer; wherein the weight percentage is based on the weight of the resin compound As a benchmark; the photoresist and the method for forming a photoresist pattern of the present invention can be used to control the photoreaction efficiency of the photoresist and increase the completeness of the reaction to obtain better photoresist resolution.

Description

technical field [0001] The invention relates to a mixed negative photoresist, in particular to a mixed negative photoresist with multiple reaction modes and a method for forming a photoresist pattern. Background technique [0002] With the continuous improvement of integrated circuit and assembly technology, thin film yellow light lithography technology, from G-line, I-line to Deep UV exposure light source development, photoresist resolution has also developed from 1μm to the current below 90nm. Under the trend of this technology and the demand of the market, the substrate technology will develop in the direction of high-density wiring, thinner shape, thinner line and high aspect ratio, so as to provide diversified carrier technology requirements for electronics and optoelectronics in the future. This type of substrate process technology is mainly based on thick film yellow light lithography technology, and its exposure light source has also developed from UV to UV parallel ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/038G03F7/00
Inventor 宋清潭庄志新曾炜展黄坤源陈聪裕
Owner IND TECH RES INST
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