Organosilicon precursor for interlayer medium film with low dielectric constant

Abstract

A method of forming a low -agent interior medium -layer medium thin film in a substrate. This method is to include metsellarium, metharial ether, hypopolin or metharial ether under the chemical gas phase of the substrate.Organic anterior compounds containing one or more active groups reacts to the anterior compound of the organic silicon compound to form a medium intervertebral film with a dielectric constant of 3.5 or lower.Film formed by the above method.

Description

technical field [0001] The invention relates to a method for forming a low dielectric constant interlayer dielectric thin film on a substrate by chemical vapor deposition (CVD) using a specific organosilicon precursor. Background technique [0002] The electronics industry utilizes dielectric materials as insulating layers between circuits and components of integrated circuits (ICs) and associated electronic devices. To increase the speed and memory capacity of microelectronic devices such as computer chips, the size of the circuits is decreasing. The size of microchips has been greatly reduced in the past decade, and the line width of about 1 micron has been reduced to 0.18 microns, which is expected to be reduced to 0.10-0.05 in the next 5-10 years. As the line size decreases, the requirements for preventing signal crossover (crosstalk) between chip elements become stricter. These requirements can be summarized by the formula RC, where R is the resi...

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Problems solved by technology

One problem: it is difficult to include all the atoms or functionalities needed in the film in the same precursor molecule and have them present in the desired proportions to produce Si a o b C c h d or Si a o b C c h d f e Thin film, wherein the total atomic % of a+b+c+d+e=100%, and a=10-35%, b=1-66%, c=1-35%, d=0-60%, e = 0-25%

[0028] Despite the above developments, there are still no examples in the prior art of successfully combining the desired mechanical and electrical properties that are most important for incorporating low-k dielectric materials into integrated circuits

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