Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine

A technology of microelectronic machinery and manufacturing methods, which is applied in the direction of optomechanical equipment, manufacturing microstructure devices, and photolithography on patterned surfaces, etc., can solve problems such as high turn-on voltage, poor electrical performance, and small phase shift, and achieve The effect of low turn-on voltage, superior electrical performance, and large phase shift

Inactive Publication Date: 2002-11-20
EAST CHINA NORMAL UNIVERSITY
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  • Abstract
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Problems solved by technology

The disadvantages of the above manufacturing method are either that the temperature of the sacrificial layer 6 hardening film is too low, the process compatibility is poor, and it is not smooth enough, or the gold film is prone to curling and collapse, resulting in: low yield, only 10%, more than 20 to 30 Th

Method used

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  • Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine
  • Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine
  • Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine

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Embodiment Construction

[0025] Example. A batch of microelectromechanical millimeter wave voltage-controlled phase shifters with 21 bridges and 35 GHz are made by adopting the method of the present invention, and the yield rate is high, reaching more than 80%; the electrical performance is superior, and when the product works at 15 GHz, when the DC bias voltage changes from 5 At ~25V, the phase shift can reach 170°; when the product works at 35GHz, when the DC bias voltage is continuously adjustable within the range of 5 ~ 20V, the phase shift can be continuously adjusted within the range of 0 ~ 370° .

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Abstract

The production method of millimetric wave voltage-controlled phase shifter belongs to the field of microelectronic solid device production technology, and is characterized by that it uses the semifinished product of said invented product, i.e. processed substrate whose surface has etched strip pattern containing grounding conductor strip, signal wire and connecting terminal and on the signal wirethe silicon nitride layer is grown as raw material, adopts prepared thermoprene negative photoresist as sacrificial layer and photoresist coating technology to make 20-30-odd metal microbridges whichare arranged regularly and whose height is uniform and width is identical on the semi-finished product. It possesses excellent electric performance, can be used as millimetric wave voltage-controlledphase shifter.

Description

technical field [0001] The invention relates to a manufacturing method of a micro-electromechanical (MEMS) millimeter-wave voltage-controlled phase shifter, belonging to the technical field of manufacturing microelectronic solid devices. Background technique [0002] The microelectromechanical (MEMS) millimeter-wave voltage-controlled phase shifter introduced by N.S.Barker has the advantages of low loss, small size, light weight, easy integration with IC or MMIC circuits, high reliability, and good voltage control performance. One of the key components of wave phased array antenna. The phase shifter mainly includes a substrate 1, a grounding conductive strip 2, a metal micro-bridge 3, a signal line 4 and a terminal 5, the substrate 1 can be quartz, silicon dioxide or gallium arsenide, the grounding conductive strip 2, the signal line 4 and terminal 5 are gold films with a thickness of 5000A deposited on the substrate 1, and silicon nitride (Si X N Y ), t...

Claims

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Application Information

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IPC IPC(8): B81C1/00G03F7/00
Inventor 郭方敏赖宗声朱自强朱守正忻佩胜
Owner EAST CHINA NORMAL UNIVERSITY
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