Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine

Abstract

The production method of millimetric wave voltage-controlled phase shifter belongs to the field of microelectronic solid device production technology, and is characterized by that it uses the semifinished product of said invented product, i.e. processed substrate whose surface has etched strip pattern containing grounding conductor strip, signal wire and connecting terminal and on the signal wirethe silicon nitride layer is grown as raw material, adopts prepared thermoprene negative photoresist as sacrificial layer and photoresist coating technology to make 20-30-odd metal microbridges whichare arranged regularly and whose height is uniform and width is identical on the semi-finished product. It possesses excellent electric performance, can be used as millimetric wave voltage-controlledphase shifter.

Description

technical field [0001] The invention relates to a manufacturing method of a micro-electromechanical (MEMS) millimeter-wave voltage-controlled phase shifter, belonging to the technical field of manufacturing microelectronic solid devices. Background technique [0002] The microelectromechanical (MEMS) millimeter-wave voltage-controlled phase shifter introduced by N.S.Barker has the advantages of low loss, small size, light weight, easy integration with IC or MMIC circuits, high reliability, and good voltage control performance. One of the key components of wave phased array antenna. The phase shifter mainly includes a substrate 1, a grounding conductive strip 2, a metal micro-bridge 3, a signal line 4 and a terminal 5, the substrate 1 can be quartz, silicon dioxide or gallium arsenide, the grounding conductive strip 2, the signal line 4 and terminal 5 are gold films with a thickness of 5000A deposited on the substrate 1, and silicon nitride (Si X N Y ), t...

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Problems solved by technology

The disadvantages of the above manufacturing method are either that the temperature of the sacrificial layer 6 hardening film is too low, the process compatibility is poor, and it is not smooth enough, or the gold film is prone to curling and collapse, resulting in: low yield, only 10%, more than 20 to 30 The height of the metal micro-bridge 3 is different, and the parameters of the width and width are not uniform, resulting in the integrity rate of the metal micro-bridge 3 on a single phase shifter <70%, or even worse; the electrical performance is poor, the turn-on voltage is high, and the phase shift is small

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