Process for preparing FeS2 on monosilicon substrate by magnetically controlled sputter to Fe film

A monocrystalline silicon wafer, magnetron sputtering technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problem of thin film peeling, and achieve the effect of not easy local peeling and high adhesion

A monocrystalline silicon wafer, magnetron sputtering technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problem of thin film peeling, and achieve the effect of not easy local peeling and high adhesion

CN1387265AInactive Publication Date: 2002-12-25ZHEJIANG UNIV
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Two single-crystal silicon wafers with a thickness of 0.9 mm and orientations of (100) and (111) were used as film-carrying substrates. First place the silicon chip in concentrated sulfuric acid to oxidize, thoroughly clean with deionized water, then use hydrofluoric acid to remove the surface oxide layer, and then thoroughly clean with deionized water. After the above operation was repeated twice, the silicon wafer was vibrated with ultrasonic wave in alcohol solution for 10 min. The surface-treated silicon wafers were dried in a thermostat at 150°C for 4 hours.

[0021] A magnetron sputtering device is used to deposit a pure iron film on a silicon wafer substrate, the target material purity is 99.99% Fe, and the thickness is 0.8mm. Before deposition, evacuate to a residual gas pressure lower than 3.0×10 -3 Pa and replaced with argon for 3 times. Pure iron films with different thicknesses of 25, 46, 55, 80 and 150 nm were deposited by controlling the sputtering time...

Embodiment 2

[0024] The substrate, the surface treatment before sputtering and the sputtering process are the same as those in Embodiment 1.

[0025] Pack the pure iron film and the sublimed sulfur powder which can produce the required mass of 80kPa pressure calculation at 500°C vulcanization temperature in a quartz tube, and evacuate until the residual gas pressure is lower than 1.0×10 -2 Pa and filled with argon for 5 times and then sealed. Place the sealed pure iron film in a heating furnace and heat it up to 500°C at a rate of 3°C / min for a thermal vulcanization reaction for 10 hours. After fully forming iron disulfide, cool it down to room temperature at a rate of 2°C / min.

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Abstract

The present invention discloses a preparing method of iron disulfide for single crystal silicon substrate with iron coating synthesis of magnetic control sputtering. Two single crystal silicon slicesin bit vectors of 100 and 111 are used as the substrate of film carrier to deposit 25-150 nm thickness of pure iron coating by magnetic control sputtering, pure iron coating and the sublimation sulfur powder of requested mass enabling to create 80 KPa pressure is packed in quartz tube, after vacuum pumping the quartz tube is heated in a heating furnace to the temperature of 400-500 degree C with temperature rising rate of 3 degree C per minute for heat sulfurizing reaction for 10-20 hour, and then is cooled to the room temperature by the temp. drop rate of 2 degree C per minute.

Description

technical field [0001] The invention relates to a method for preparing a sputtering coating functional thin film. Background technique [0002] With the progress of science and technology and the development of human civilization, the supply of primary energy such as coal, oil and natural gas can no longer meet the needs, and its reserves are also rapidly decreasing. Moreover, during the use of these primary energy sources, a large amount of gases harmful to human beings will be released, destroying the environment on which human beings depend for survival. Therefore, the utilization of renewable resources has become the primary content of current scientific research. Among all kinds of renewable resources, inexhaustible solar energy has become the focus of new energy utilization and development. One of its forms is to convert its light energy into electrical energy to benefit mankind. [0003] A solar cell is a device that directly converts ligh...

Claims

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Application Information

Patent Timeline
25 Dec 2002
Publication
CN1387265A
IPC
H01L31/0296; H01L31/18
CPC
Y02P70/50
Inventors
孟亮; 刘艳辉